<p> An investigation has been made of the microwave reflections from the surface of a semiconducting medium with complex permittivity (^ε = εrεo -jσ/ω) at the open end of an empty rectangular waveguide. The approximate and exact solutions of the reflection coefficients at the surfaces of both finite and semi-infinite media have been found as a function of the complex permittivity of the medium. The computations of the reflection coefficients are made at the 10 and 35 GHz ranges. Measurements, which confirm these calculations, have been performed with n-type germanium, selectron, and air at the open end of a rectangular waveguide using a reflection type microwave bridge. The investigation has shown that it is possible to devise a convenient method of measuring the conductivity and dielectric constant of semiconductors.</p> <p> The theory of operation of the microwave reflection bridge together with the setting-up (matching) procedure of a practical form of the bridge has been presented. A method is also described for the correction of the measurement error which arises from the scattering coefficients at the input ports of the precision attenuator.</p> <p> A theoretical and experimental study has also been made of the small- signal microwave conductivity of n-type germanium at room temperature in the presence of a high electric field, directed at an angle θ to the microwave field. The study has shown that at frequencies such as 10 GHz, the microwave conductivity becomes anisotropic with respect to the direction of the d.c. field vector. Measurements are made on an 11.4 ohm cm, n-type germanium sample at 9.381 GHz with applied electric fields up to 1.8 KV/cm for θ = 0°, 40°, and 90°. The ''open-end-waveguide measuring technique", which allows the angle between the microwave and d.c. field vectors to be varied, was employed to measure the microwave conductivity. The results of measurements which agree with predictions, confirm the feasibility of operation of a new microwave device based on the anisotropic effect.</p> / Thesis / Doctor of Philosophy (PhD)

<p> A method for the measurement of the microwave conductivity of a semiconductor subjected to a high electric field is described, which provides for varying angles between the microwave and applied electric field vectors. The results of measurements on 10 ohm-em. n-type germanium at 9.522 GHz with applied electric fields up to 3KV/cm are given. </p> <p> The measurements show that the microwave conductivity is controlled by the differential carrier mobility (∂V/∂E) for the condition of microwave and applied electric field vectors parallel. For the case of the fields at right angles the microwave conductivity is controlled by a carrier mobility intermediate between the d. c. mobility (v/B) and the differential mobility (∂V/∂E). </p> <p> Theoretical expressions for the performance of a proposed "Hot Electron Microwave Rotator" are developed. </p> / Thesis / Master of Engineering (MEngr)

<p> A number of microwave measuring techniques for the measurement of the complex permittivity (^ɛ = ɛo ɛr - j σ/ω) have been investigated and a new method based on the replacement of the narrow wall of a rectangular wave-guide by a block of semi-conductor has been developed. This technique is shown to be suitable for the measurement of σ when σ >> ωɛo ɛr and for the measurement of σ and ɛr for σ ≃ ωɛo ɛr. </p> <p> An investigation has been made of the propagation characteristics of a rectangular wave-guide containing a centrally placed slab of semi-conductor parallel to the narrow walls of the guide. A comparison of exact solutions for the propagation constant in such a structure with the approximate solutions normally used has shown that the conditions for the validity of the approximate solutions are much more stringent than has been reported previously. It is further shown that under certain conditions the structure offers a convenient method of measuring the conductivity of a semi-conductor. In addition, a theoretical and experimental investigation of the effects of the higher order modes excited at the interface of such a structure with an empty wave-guide has been made. The study has shown that under certain conditions, the effects of these modes can be significant.</p> <p> A theoretical and experimental study has also been made of the effects of temperature, frequency and doping on the complex permittivity of lightly doped n-type germanium. Measurements of these effects which have not been reported previously have been made over a temperature range 100°K - 500°K at frequencies 9.25 and 34.5 GHz and confirm the theoretical model used.</p> / Thesis / Doctor of Philosophy (PhD)