The Shubnikov-de Haas effect is an oscillation in the electrical resistivity or conductivity of a metal, semimetal, or semiconductor as a function of changing magnetic field which occurs at low temperatures. The effect is caused by the quantization of the momentum and energy of the charge carriers by the magnetic field. Since the nature of the oscillation depends strongly on the energy band structure of the material in which it is measured, the effect could be quite useful as an investigative tool. Its usefulness has been limited, however, by the uncertainty as to the functional form of the relationship between the measured oscillations and the parameters characterizing the material. One purpose of the present study is to extend the usefulness of the Shubnikov-de Haas effect by experimentally determining the functional form appropriate for a material such as n-type indium antimonide. The second purpose of the study is to determine values for the parameters which characterize the band structure of indium antimonide. The curve fitting procedure is found to be a powerful tool for investigating band structure. All computer programs used in processing the data, fitting the data, and comparing the results with the Kane model are given.