京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第19723号 / 工博第4178号 / 新制||工||1644(附属図書館) / 32759 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 野田 進, 教授 木本 恒暢, 教授 川上 養一 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM

Atteindre le régime de couplage fort entre des nanocavités et des systèmes atomiques est un élément clé dans l'information quantique. Durant ma thèse, j'ai designé et fabriqué des nanocavités à cristal photonique en GaInP pour le couplage fort autour de 800 nm, longueur d'onde typique des atomes du Rubidium (780 nm) et de Césium (852 nm), les plus utilisés dans le domaine, ainsi que de l'Argon (811 nm). L'objectif est de faire interagir ces atomes avec la partie évanescente du mode fondamental de la nanocavité. Pour cela, un facteur de qualité de l'ordre de 8.10^4 et un volume modal inférieur à 0,04 µm^3 est nécessaire.La nanocavité est l'élément clé d'une plateforme nanophotonique. Nos plateformes sont composées d'une nanocavité à cristal photonique résonant autour de 800 nm, d'un réseau-coupleur pour collecter la lumière issue d'une fibre optique et vice versa et de guides d'alimentation pour transporter la lumière du réseau-coupleur à la nanocavité. Plusieurs défis technologiques ont émergé. La nanocavité doit avoir un fort facteur de qualité et un faible volume modal, le réseau-coupleur doit collecter le maximum de lumière issue de la fibre, les guides d'alimentation doivent transporter la lumière sans perte et, enfin, un mécanisme pour coupler la lumière des guides d'alimentation dans la nanocavité devait être trouvé.J'ai simulé, designé, fabriqué et caractérisé les éléments de ma structure. J'ai obtenu des facteurs de qualité supérieurs à 10^7 en théorie, et de l'ordre de 2.10^4 expérimentalement, détenant ainsi le record pour les cavités en GaInP autour de la longueur d'onde de 800 nm pavant la voie à la réalisation des expériences de couplage fort. / Reaching the strong coupling between nanocavities and atomic systems is a key element for Quantum Information. During my PhD, I designed and fabricated photonic crystal nanocavities in Gallium Indium Phosphide (GaInP)for strong coupling around 800,nm, typical wavelength of atoms such as Rubidium (780,nm), Cesium (852 nm), the most used in this domain, and the Argon atoms (811 nm).The aim of my PhD thesis is to provide with a nanophotonic platform dedicated to strong coupling interaction. For this, nanocavities having optical resonances arounf 800 nm, with quality factors larger than 8.10^4 and mode volumes smaller than 0.04µm^3 are necessary.The nanocavity is a key element of nanophotonic plateform. Our platforms are composed of a photonic crystal nanocavityitself, a grating-coupler in order to collect light from a optic fiber and vice versa and feeding waveguides in order to transport the light from the grating-coupler to the cavity. An efficient nanophtonic platfom for a reaslitic implementation should have a nanocavity with a large Q-factor and small mode volume. The grating-coupler must efficiently collect the light from the optical fiber, and the feeding waveguides must transport the light without losses.I simulated, designed,fabricated and caracterized the elements of my structure. I obtained quality factors larger than 10^7 in theory, and about 2.10^4 experimentally, getting the record for the nanocavities in GaInP around the wavelength 800 nm, which make them close to realize experiments of strong coupling.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Integrating solid-state qubits to photonic circuit can be a revolutionary ingredient for quantum information processing and transportation of information. If on one hand solidstate based qubits are a very promising candidate for the quantum computation unit, photons, on the other hand, are the most reliable and fast way to transport information. Making the junction of this two ingredients is highly desired. In this sense, semiconductor quantum dots (QDs) in photonic crystals (PhC) provide a perfect environment for such an integration, where waveguides can be used to connect qubits and detectors. In this work, the light-matter interaction of a system composed of quantum dots embedded in semiconductors nanocavities is studied in details using density matrix formalism in the Lindblad form. In a first study, the effect of incoherent therms on the splitting of emission spectrum of a single QD inside a PhC is analyzed and we found that the splitting observed in the experiments can not translated very easily by polaritonic splitting. In other words, the observed splitting is not the coherent coupling between exciton and photons. In another work a quantum dot molecule inside a PhC is used and found that depending on the symmetry (symmetric or anti-symmetric) the molecule state, the splitting in the emission spectrum can be decreased (even zero depending on the choices of parameters) or enhanced when compared to that of a single QD. In the last study the emission spectrum of a system composed of an empty cavity coupled to another cavity with a single QD embedded is investigated. Our results demonstrate that the emission spectra of a low quality factor mode of the empty cavity can be used to monitor the quantum dot-cavity subsystem and its interactions. / Integrar bits quânticos(qubits) de estado sólido em circuitos fotônicos pode ser um ingrediente revolucionário para processamento e transporte de informação quântica. Se por um lado qubits baseado s em estado sólido são candidatos muito promissores para serem a unidade básica de computação quântica, por outro, o uso de fótons é a maneira mais confiável e rápida para transportar informações. Fazer a junção destes dois ingredientes é altamente desejado. Neste sentido, pontos quânticos semicondutores (PQs) em cristais fotônicos formam um ambiente ideal para tal realização, onde guias de onda podem ser utilizados para fazer a ligação entre qubits e detectores. Com esta motivação, neste trabalho é estudada em detalhes a interação radiação-matéria de um sistema composto por PQs embutidos em nanocavidades semicondutoras. Em todos os estudos é usado o formalismo da matriz densidade na forma de Lindblad. Em um primeiro estudo, é analisado o efeito de termos incoerentes no splitting do espectro de emissão de um único PQ dentro de uma nanocavidade. Vê-se que splitting observado nos experimentos não se traduz de forma fácil para o splitting polar itônico. Em outras palavras, o splitting observado nos experimentos não é o acoplamento entre o éxciton e os fótons. Em outro estudo utiliza-se uma molécula de PQ dentro de uma nanocavidade. Observa-se que, dependendo da simetria do estado quântico da molécula de PQ(simétrico ou anti-simétrico), o splitting no espectro de emissão pode ser reduzido (chegando até mesmo a zero dependendo dos parâmetros) ou equivalente como splitting de um único PQ. Por fim, investiga-se o espectro de emissão de um sistema composto por uma cavidade vazia acoplada a outra cavidade contendo um único PQ. Os resultados demonstram que o espectro de emissão de um modo de uma cavidade vazia de baixo fator de qualidade pode ser usado para monitorar o subsistema cavidade com um único PQ e suas interações. / Doutor em Física

Dans ce travail de thèse, nous avons étudié des effets d'optique non-linéaire d'ordre trois dans les cavités à cristaux photoniques en silicium. Le premier d'entre eux est un phénomène d'auto-oscillations à haute fréquence (GHz) dans ces cavités, qui a pour origine une modulation de la transmission de la cavité due à l'interaction entre la dispersion due aux porteurs libres et l’absorption à deux photons. Nous avons observé ces auto-oscillations, pour la première fois, dans les nanocavités à cristaux photoniques silicium avec une fréquence de l’ordre de 3 GHz et une grande pureté spectrale. Nous avons développé un modèle pour analyser les mécanismes qui régissent l'apparition de ces auto-oscillations, ainsi que les amplitudes des fréquences fondamentale et harmoniques de ces oscillations. Ce phénomène d'auto-oscillations permettrait de réaliser des sources micro-ondes en silicium très compactes. Le deuxième phénomène étudié est celui de la diffusion Raman, qui est le seul moyen d'obtenir des lasers entièrement en silicium démontré jusqu'à présent. Cette diffusion Raman a été mesurée tout d'abord dans des guides d'onde à cristaux photoniques étroits (W0.63) de longueur 100 microns, où nous avons pu obtenir un nombre de photons Stokes allant jusqu'à 9, montrant ainsi que la diffusion Raman stimulée prédominait dans ces guides d'onde, bien que nous n’ayons pas pu y obtenir un effet laser Raman franc. Nous avons ensuite mesuré la diffusion Raman dans des nanocavités doublement résonantes conçues spécifiquement à partir de ces guides d'ondes pour optimiser l'effet Raman, avec des facteurs de qualités allant jusqu'à 235000 pour la résonance Stokes. Bien que nous n'ayons pu mesurer que de la diffusion Raman spontanée dans ces cavités, avec un facteur de Purcell de 2.9, l'étude théorique que nous avons effectuée sur les lasers Raman, et qui s'accorde parfaitement avec les résultats expérimentaux, montre qu’il serait possible d'obtenir un laser Raman dans ces cavités avec un seuil en dessous du milliwatt à condition de diminuer ces pertes dues à l'absorption par porteurs libres. Ceci pourrait être accompli en diminuant le temps de vie des porteurs libres, par exemple en les retirant du silicium à l’aide d’une jonction MSM. / In this thesis, we studied third order nonlinear optical effects in photonic crystal cavities. The first of those effects is is the phenomenon of high frequency (GHz) self-pulsing in these cavities, which originates from a modulation of the transmission of the cavity due to the interaction between the free-carrier dispersion and the two-photon absorption. We have observed these self-induced oscillations for the first time in silicon photonic crystal nanocavities, with a frequency of about 3 GHz and a high spectral purity. We have developed a model to analyze the mechanisms that govern the onset of these oscillations, as well as the amplitudes of the fundamental and harmonic frequencies of these oscillations. This self-pulsing phenomenon would allow us to realize realize ultra-compact microwave sources made of silicon. The second phenomenon studied is that of Raman scattering, which is the only way to obtain lasers fully in silicon demonstrated so far. The Raman scattering was measured first in narrow photonic crystals waveguides (W0.63) of length 100 microns, where we could obtain a number of Stokes photons up to 9, showing that the stimulated Raman scattering predominated in these waveguides, although we have not been able to obtain a true Raman laser effect in them. We then measured the Raman scattering in doubly resonant nanocavities specifically designed from these waveguides to optimize the Raman effect, with quality factors up to 235000 for the Stokes resonance. Although we could only measure spontaneous Raman scattering in these cavities, with a Purcell factor of 2.9, the theoretical study that we conducted on the Raman lasers, which agrees perfectly with the experimental results, shows that it would be possible to obtain a Raman laser in these cavities with a threshold below the milliwatt, provided we reduce the losses due to the free-carrier absorption. This could be accomplished by decreasing the free-carrier lifetime, for example by removing the free carriers from the silicon using a MSM junction.

In this work we studied the effects of coherent laser in a system formed by a quantum dot (QD) in a nanocavity. Initially we investigated the case where the energy of an éxciton are in resonance with the cavity mode and we vary the frequency of the laser. During our simulation we have used pulsed and continuos laser. We consider only the éxciton state of the QD, and in situations where both the laser and the cavity mode are close to resonance, allowing us to use the rotating wave approximation. The QD was treated as a two-level system and the cavity containing a maximum of four photons. For this study we used the Jaynes-Cummings model with an extra term related to the external pulse, which was used to manipulate quantum states. This was done with the help of diagonalization of the approximated Hamiltonian and searching for anticrossings in its energy spectrum. Then we use a continuous laser and the technique of calculating the average occupational each state to do a better mapping of the parameter values required to make the manipulation of quantum states. We found that the system can be manipulated using the process of two or more photons, and the energies of these photons could be estimated using a mapping procedure developed in this dissertation. / Neste trabalho estudamos os efeitos da incidência de um laser coerente num sistema formado por um ponto quântico (PQ) no interior de uma nanocavidade. Inicialmente investigamos o caso em que a energia de um éxciton formado no PQ está em ressonância com um modo da cavidade e variamos a frequência do laser incidente. Usamos laser contínuo e pulsado em nossas simulações. O ponto quântico foi tratado como um sistema de dois níveis e consideramos que a cavidade contém no máximo quatro fótons. Para este estudo foi utilizado o modelo de Jaynes-Cummings com acréscimo de um termo relacionado com o pulso externo usado para manipular os estados quânticos, que foi feito com o auxílio da diagonalização do Hamiltoniano aproximado e procurando por anticruzamentos no seu espectro de energia. Consideramos apenas o estado de éxciton no PQ, e situações em que tanto o laser como o modo da cavidade estão próximos à energia de ressonância, o que nos permitiu usar a aproximação de ondas girantes. Utilizamos um laser contínuo e calculamos a média ocupacional de cada estado para fazer um melhor mapeamento dos valores dos parâmetros necessário para realizar a manipulação dos estados quânticos. Encontramos que o sistema pode ser manipulado usando processo de dois ou mais fótons, sendo que as energias destes fótons podem ser estimadas usando um procedimento de mapeamento desenvolvido nesta dissertação. / Mestre em Física