When the size of display panel increased, the RC delay of TFTs became serious.In order to solve this problem, it is necessary to incorporate a high dielectric (high-k) material used as the gate oxide can increase the gate oxide capacitance Co, which can induce a higher drain current and higher aperture ratio. In this study, titanium silicon oxide films were grown on amorphous silicon and poly-crystal silicon by liquid phase deposition, the addition of NH4OH in the growth solution can control the PH value and prevent the amorphous and poly-crystalline silicon over etching by HF. The physical and chemical properties of titanium silicon oxide film by means of several measuring instruments, including Fourier transform infrared spectrometer (FTIR), and X-Ray diffractometer (XRD). An Al/titanium silicon oxide/a-Si or poly-Si/Si metal-oxide-semiconductor (MOS) capacitor structure was used for the electrical measurements. After oxygen and nitrogen annealing, the leakage current is improved due to the reduction of the oxygen vacancy of titanium silicon oxide film. However, the electrical characteristics can be further improved by the postmetallization annealing treatment especially under the negative electric field. Post-metallization annealing (PMA) is to use the reaction between the aluminum contact and hydroxyl groups existed on oxide surface to form active hydrogen and diffuse through the oxide to passivate the oxide traps. Therefore, titanium silicon oxide film which treated by PMA with higher dielectric constant and lower leakage current can be obtained.

The advantages of LPD method, low temperature process, low cost, conformal growth (good step coverage), selective growth and inexpensive deposition system make the method of LPD versatile in IC fabrication. LPD-SiOF is a potential method to replace traditional method of SiOF deposition. But, some drawbacks, including slightly low dielectric constant and poor performance of J-E relationship, still exist in LPD-SiOF process. In order to improve these shortcomings, with incorporating NH4OH into the LPD solution in this experiment, the SiOF:N film with high quality and low dielectric constant can be grown on Si by the TD-LPD method. In this study, the growth rate can be controlled well within 90~550 Å/h corresponding to the NH4OH concentration range of 0.1~0.8 M at the temperature range of 23~40 ¢XC. As TD-LPD-SiOF:N film deposited with 0.8 M NH4OH incorporation, the refractive index for can be kept at a constant 1.431 and the P-etch rate can be kept between 18.3 and 19.2 Å/s during the deposition temperature changes. The best experimental condition is found that incorporating 0.8 M NH4OH will get good results. If the concentration of 0.8 M is higher or lower than 0.8 M, the electrical characteristic will become poor. A model for TD-LPD-SiOF:N deposition mechanism is proposed. From the analysis of SIMS depth profile, the deposited film can be suggested that it is a combination of N-less LPD-SiOF film and N-rich accumulated interfacial layer. The properties of N-rich accumulated layer at the interface show the least effective oxide charges and lowest leakage current density. As the thickness of TD-LPD-SiOF:N film is 800 Å, the film has the best electrical characteristic. When the thickness is below or above 800 Å, all the properties become poor. TD-LPD-SiOF:N film deposited at 40 ¢XC with 0.8 M NH4OH incorporation with a thickness of 800 Å has the best physical, chemical, electrical properties. The F content for deposited film can reach 9.8 atom %. The dielectric constant can drop to about 3.07.

With increasing integration density of very large scale integrated (VLSI) devices, multilevel metallization technology is becoming more important than it used to be. In advanced logic devices, the interlayer dielectrics have increased to four or five layers. Silicon oxide films are used as interlayer film. One candidate for making interlayer film with a low dielectric constant is F-doped Silicon oxide (SiOF). Such films have a low dielectric constant and that moisture absorption is the main drawback in using this material. For this reason, we intend to dehydrate the SiOF films by thermal annealing treatment. It could improve the electrical properties of oxide films and obtain a reliable film with lower dielectric constant. This is our purpose in this paper to explore the electrical and chemical properties of LPD-SiOF films with annealing treatment. The chemical and electrical properties can be controlled well within 250 ~ 450 ¢J annealing treatment. The LPD-SiOF film deposited at 40 ¢J with 0.8 M NH4OH incorporation and 350 ¢J annealing treatment obtain the best electrical results. The dielectric constant can drop to about 3.2, and the leakage current density can be improved to about 1¡Ñ10-7 A/cm2 under 1.5 MV/cm. Results of this study demonstrate that the SiOF films prepared by LPD with NH4OH incorporation followed by annealing treatment is suitable for IMD application.

Ethylene oxide (EO) is a very versatile compound with considerable energy in its ring structure. Its reactions proceed mainly via ring opening and are highly exothermic. Under some conditions, it is known to undergo a variety of reactions, such as isomerization, polymerization, hydrolysis, combustion and decomposition Due to its very reactive characteristic and widely industrial applications, EO has been involved in a number of serious incidents such as Doe Run 1962, Freeport 1974, Deer Park 1988 and Union Carbide Corporation’s Seadrift 1991. The impacts can be severe in terms of death and injury to people, damage to physical property and effects on the environment. For instance, the Union Carbide incident in 1991 caused one fatality and extensive damage to the plant with the property damage of up to 80 million dollars. Contamination has a considerable impact on EO reactivity by accelerating substantially its decomposition and playing a key role on EO incidents. In this work, the reactivity of EO with contaminants such as KOH, NaOH, NH4OH, and EDTA is evaluated. Useful information that is critical to the design and operation of safer chemical plant processes was generated such as safe storage temperatures (onset temperature), maximum temperature, maximum pressure, temperature vs. time, heat and pressure generation rates as a function of temperature and time to maximum rate using adiabatic calorimetry. A special arrangement for the filling-up of the cell was constructed due to the gaseous nature and toxicity of EO. A comparison of their thermal behavior is also presented since several contaminants are studied.