581 |
A study of gate dielectrics for wide-bandgap semiconductors GaN & SiC /Lin, Limin, January 2007 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2007. / Title proper from title frame. Also available in printed format.
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582 |
Identification and characterization of point defects in aluminum nitride and zinc oxide crystalsEvans, Sean M. January 1900 (has links)
Thesis (Ph. D.)--West Virginia University, 2008. / Title from document title page. Document formatted into pages; contains xiii, 109 p. : ill. Includes abstract. Includes bibliographical references (p. 102-109).
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583 |
Contact characterization and persistent photoconductivity effects in MBE grown n-type GaNFrazier, Stuart Thomas. January 1900 (has links)
Thesis (M.S.)--West Virginia University, 1998. / Title from document title page. "December 1998." Document formatted into pages; contains viii, 125 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 84-89).
|
584 |
GaN growth by RF-plasma assisted molecular beam epitaxy determination of surface stoichiometry by RHEED-TRAXS, annealing of GaN:Be and the effects of active nitrogen species, surface polarity, and excess Ga-overpressure on high temperature limits /VanMil, Brenda. January 1900 (has links)
Thesis (Ph. D.)--West Virginia University, 2005. / Title from document title page. Document formatted into pages; contains xi, 99 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 93-99).
|
585 |
Deep level transient spectroscopy of heteroepitaxial polycrystalline diamond and aluminum nitride /Karbasi, Hossein, January 1998 (has links)
Thesis (Ph. D.)--University of Missouri-Columbia, 1998. / Typescript. Vita. Includes bibliographical references (leaves 107-111). Also available on the Internet.
|
586 |
Deep level transient spectroscopy of heteroepitaxial polycrystalline diamond and aluminum nitrideKarbasi, Hossein, January 1998 (has links)
Thesis (Ph. D.)--University of Missouri-Columbia, 1998. / Typescript. Vita. Includes bibliographical references (leaves 107-111). Also available on the Internet.
|
587 |
Aluminum nitride deposition / characterization & pMEMS / saw device simulation / fabricationPagán, Vincent Richard. January 1900 (has links)
Thesis (M.S.)--West Virginia University, 2009. / Title from document title page. Document formatted into pages; contains xvii, 169 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 147-155).
|
588 |
Hall effect and photoconductivity lifetime studies of GaN, InN, and Hg₁-[subscript x]Cd[subscript x]TeSwartz, Craig H. January 2005 (has links)
Thesis (Ph. D.)--West Virginia University, 2005. / Title from document title page. Document formatted into pages; contains ix, 72 p. : ill. Includes abstract. Includes bibliographical references (p. 68-72).
|
589 |
Study of the early stages of growth and epitaxy of GaN thin films on sapphireTrifan, Eugen Mihai. January 2003 (has links)
Thesis (Ph.D.)--Ohio University, August, 2003. / Title from PDF t.p. Includes bibliographical references (leaves 188-194)
|
590 |
Selective silicon and germanium nanoparticle deposition on amorphous surfacesCoffee, Shawn Stephen, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.
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