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Bond length and bonded radii variations in nitride molecules and crystals /Buterakos, Lewis A., January 1990 (has links)
Thesis (M.S.)--Virginia Polytechnic Institute and State University, 1990. / Vita. Abstract. Includes bibliographical references (leaves 25-27). Also available via the Internet.
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Ab-initio Study of the Properties of Advanced Metal NitridesOrisakwe, Esther Nkiruka 12 October 2011 (has links)
MSc., Faculty of Science, University of the Witwatersrand, 2011 / Materials are modeled by the ab-initio plane wave pseudopotential methods using density
functional theory. In this work, we are seeking new ultrahard with enhanced elastic and
mechanical properties, thermal stability as well as hardness which might be of advantage
over known traditional materials (diamond and cubic boron nitride). Structural, elastic and
electronic properties of the advanced metal nitrides M2N3 and their ternary phases were
investigated using both the local density approximation (LDA) and the generalized gradient
approximation (GGA). The relative stability of the ternary phases with respect to their
constituent mixtures is computed. Results obtained are compared with the available experimental
and theoretical data. To gain more information concerning the elastic properties of
these hypothetical materials, we also computed the charge densities of the binary and ternary
phases. From these calculations suggestions are made as to how the elastic properties vary
from those of known hard materials.
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A study of surface properties of III-nitride semiconductors by first principles total energy calculationSo, Wai-kei. January 2006 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2007. / Title proper from title frame. Also available in printed format.
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Growth and characterezation of indium nitride layers grown by high-pressure chemical vapor depositionAlevli, Mustafa. January 2008 (has links)
Thesis (Ph. D.)--Georgia State University, 2008. / Title from file title page. Nikolaus Dietz, committee chair, Brian Thoms, A. G. Unil Perera, Xiaochun He, committee members. Electronic text (215 p. : col. ill.) : digital, PDF file. Description based on contents viewed on July 14, 2008. Includes bibliographical references (p. 209-215).
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Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performanceEJessen, Gregg Huascar. January 2002 (has links)
Thesis (Ph. D)--Ohio State University, 2002. / Title from first page of PDF file. Document formatted into pages; contains xxx,198 p.: ill. (some col.). Includes abstract and vita. Advisor: Leonard J. Brillson, Dept. of Electrical Engineering. Includes bibliographical references (p. 188-198).
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COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GANMitra, Chandrima 02 April 2009 (has links)
No description available.
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A theoretical investigation of structural, electronic and optical properties of some group 10, 11 and 12 transition-metal nitridesSuleiman, Mohammed Suleiman Hussein 05 March 2014 (has links)
Nitrides of late transition metals possess interesting properties leading to different technological applications, yet, due to many factors, synthesis and reliable characterization of the physical properties of these materials constitute a big challenge. In this work, we present a detailed firstprinciples investigation of the structural, the electronic and the optical properties of the bulk crystalline MNx (where M = Pd, Pt, Cu, Ag or Au; and x = 1/3, 1 or 2) and ZnN.
The studied structural properties include energy-volume equation of state (EOS), equilibrium lattice structural parameters, cohesive and formation energies, relative phase stabilities, bulk modulus and its pressure derivative. By means of the enthalpy-pressure EOS, some possiblepressure-induced structural phase transitions are carefully examined. Electronic properties of the energetically most stable phases are investigated via the analysis of their band structure and their total and partial densities of states (DOSs). The frequency-dependent optical constants (absorption coefficient, reflectivity, refractive index, and energy-loss spectrum) of some phases are derived from the calculated frequency-dependent microscopic dielectric tensor.
Our calculations of the structural and the electronic properties are based on density functional theory (DFT) within the projector-augmented wave (PAW) formulation and the generalised-gradient approximation (GGA) to the exchange-correlation functional. In order to improve the calculated electronic structure, and to investigate the optical spectra, we carry out expensive GW0 calculations within the the random-phase approximation (RPA) to the dielectric tensor.
Obtained results are discussed within the employed theoretical methods of calculations. Whenever possible, our obtained results are compared with experiment and with previous theoretical studies. We report the discovery of some possible low-energy competitive phases which are more stable at zero pressure than the synthesized and other hypothetical structural phases. To the best of our knowledge, our calculated optical spectra may be considered as the first, and thus, the most accurate, calculations within the many-body perturbation GWA calculations, so far.
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Laser spectroscopy of transition metal nitrides江河, Jiang, He. January 1999 (has links)
published_or_final_version / Chemistry / Doctoral / Doctor of Philosophy
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A study of surface properties of III-nitride semiconductors by first principles total energy calculationSo, Wai-kei., 蘇偉基. January 2006 (has links)
published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy
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Absorption spectroscopy and atomistic modelling on nitride semiconductorsZhang, Siyuan January 2014 (has links)
No description available.
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