Nonpolar free-standing GaN wafer were fabricated by using the hydride vapor phaseepitaxy(HVPE) technique on £^-LiAlO2 and (010) LiGaO2 substrates. Metallic gallium, NH3 and ultra-purity nitrogen were used as Ga and N sources. Nitrogen and hydrogen was used as the carrier gases. HCl diluted by nitrogen was designed to pass through near surface of liquid Ga to form GaCl fully. Efficaciously GaN deposition was realized by conducted steady NH3 and GaCl flows to the substrate suface, accommodated by additional hydrogen and nitrogen atmosphere flows. The influence of substrate temperature¡Bpressure¡Btime¡Band ratio of NH3/HCl (¢½/¢») on film growth was investigated. Because of the of the lattice-matched theory, Nonpolar m-plane GaN [10-10] growth on the closely lattice-matched (100) £^-LiAlO2 substrat and a-plane GaN [11-20] will growth on the [010] LiGaO2 substrate. In addition, the surface morphologies were characterized by scanning electron microscopy¡BOptical Microscope and Atomic force microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction and transmission electron microscopy. High resolution transmission electron microscopy shows the in-plane structure. Photoluminescence (PL) spectroscopy was used to study the optical properties.