Techn. Hochsch. Diss., 2005--Aachen.

abstract: Silicon nanowires were grown epitaxially on Si (100) and (111) surfaces using the Vapor-Liquid-Solid (VLS) mechanism under both thermal and plasma enhanced growth conditions. Nanowire morphology was investigated as a function of temperature, time, disilane partial pressure and substrate preparation. Silicon nanowires synthesized in low temperature plasma typically curved compared to the linear nanowires grown under simple thermal conditions. The nanowires tended bend more with increasing disilane partial gas pressure up to 25 x10-3 mTorr. The nanowire curvature measured geometrically is correlated with the shift of the main silicon peak obtained in Raman spectroscopy. A mechanistic hypothesis was proposed to explain the bending during plasma activated growth. Additional driving forces related to electrostatic and Van der Waals forces were also discussed. Deduced from a systematic variation of a three-step experimental protocol, the mechanism for bending was associated with asymmetric deposition rate along the outer and inner wall of nanowire. The conditions leading to nanowire branching were also examined using a two-step growth process. Branching morphologies were examined as a function of plasma powers between 1.5 W and 3.5 W. Post-annealing thermal and plasma-assisted treatments in hydrogen were compared to understand the influences in the absence of an external silicon source (otherwise supplied by disilane). Longer and thicker nanowires were associated with longer annealing times due to an Ostwald-like ripening effect. The roles of surface diffusion, gas diffusion, etching and deposition rates were examined. / Dissertation/Thesis / Ph.D. Materials Science and Engineering 2011

Orientador: Mario Antonio Bica de Moraes / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin" / Made available in DSpace on 2018-07-21T04:10:24Z (GMT). No. of bitstreams: 1 Cruz_NilsonCristinoda_M.pdf: 3027472 bytes, checksum: f72eb8359e6b11c8f45656d0edb1a514 (MD5) Previous issue date: 1995 / Resumo: Filmes finos foram depositados por Polimerização a Plasma a partir de descargas de misturas de tetrametilsilano (TMS), He, Ar e O2 e TMS, He, Ar e N2. Foram estudados tanto os filmes quanto as descargas nas quais eles foram depositados. Três sistemas de deposição foram utilizados. No primeiro deles, o plasma era gerado pela aplicação de um campo elétrico contínuo entre dois eletrodos circulares e paralelos montados em uma câmara de vácuo de vidro Pyrex. O segundo reator, empregado apenas nas descargas com oxigênio, era do tipo magnetron. Nele, os plasmas também eram mantidos por corrente contínua, entretanto, um campo magnético, resultante de imãs montados dentro do catodo, era sobreposto ao campo elétrico aplicado. No terceiro reator, o sistema rf, os plasmas eram excitados por campos de radiofreqüência (40 MHz) aplicados a dois eletrodos circulares internos a uma câmara de aço inox. Os plasmas foram estudados por espectroscopia de emissão óptica empregando-se o método actinométrico, com argônio como actinômetro. Foram investigadas as concentrações relativas de várias espécies químicas no plasma em função da proporção de O2 ou N2 nas descargas. As principais espécies reativas observadas nas descargas com oxigênio foram CO, CH, OH, H, 0 e H2 enquanto que nas descargas com nitrogênio observou-se CN, CH, H e N2. Empregando-se um perfilômetro, determinou-se as taxas de deposição dos filmes para os três sistemas em função da proporção de O2 e N2. A estrutura molecular dos filmes depositados em descargas com diferentes proporções de O2 ou N2 foi investigada por espectrofotometria infravermelha de transmissão. Isto revelou que a introdução de oxigênio e nitrogênio na descarga resulta na incorporação destes elementos no material depositado formando ligações como, por exemplo, C=O, O-H e Si-O-Si e N-H e Si-NH-Si. Além disto, observou-se que a densidade destas ligações nos filmes é dependente da proporção de oxigênio ou nitrogênio na alimentação. Através de espectros de transmissão UV-VISíVEL foram determinados o índice de refração e o coeficiente de extinção dos filmes. Com isto observou-se, por exemplo, que, no sistema rf, quanto maior a proporção de oxigênio na alimentação, menor é o coeficiente de extinção dos filmes depositados. Além disto, constatou-se que os índices de refração destes filmes decrescem de 1,63 até 1,54 quando a proporção de oxigênio na alimentação aumenta de 0 a 25% / Abstract: Thin films were deposited by plasma polymerization from plasmas of mixtures of tetramethylsilane (TMS), He and Ar with oxygen and with nitrogen. Both the discharges and the films were studied. Three deposition systems were used. In the first, a direct current plasma was maintained between circular parallel-plate electrodes mounted in a Pyrex reactor. In the second, used only for the discharges containing oxygen, permanent magnets mounted within the cathode were also used to intensify the discharge in a so-called magnetron system. In the third, a radiofrequency (RF) system, the plasmas were excited by RF fields (40 MHz) applied to two intemal circular electrodes within a stainless-steel chamber. The plasmas were studied by optical emission spectroscopy using the actinometric method, with argon employed as the actinometer. The relative concentrations of various chemical species in the plasma were studied as a function of the proportion of oxygen or nitrogen in the feed. The principal reactive species observed in the plasmas fed with oxygen were CO, CH, OH, H, O and H2, while in the plasmas fed nitrogen, CN, CH, H and N2 were observed. Using a profilometer, the deposition rates of the films produced in the three systems were determined as a function of the proportion of oxygen or nitrogen in the feed. Transmission infrared spectrophotometry was used to investigate the molecular structure of films deposited in plasmas fed different proportions of oxygen or nitrogen. This revealed that the introduction of oxygen or nitrogen into the plasma results in the incorporation of these elements into the deposited material, forming groups such as C=O, O-H and Si-O-Si, and N-H and Si-NH-Si. In addition, it was observed that the density of these groups in the films depends on the proportion of oxygen or nitrogen in the feed. From transmission ultraviolet-visible spectra the refractive index and extinction coefficient of the films were determined. Thus it was observed that, for example, for the RF system, as the proportion of oxygen in the feed was increased the extinction coefficient was reduced. In addition, the refractive index of these films fell from 1.63 to 1.54 as the proportion of oxygen in the feed was increased from 0 to 25% / Mestrado / Física / Mestre em Física

Orientador: Mario Antonio Bica de Moraes / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin" / Made available in DSpace on 2018-07-21T23:37:28Z (GMT). No. of bitstreams: 1 Rangel_ElidianeCipriano_M.pdf: 2530736 bytes, checksum: 92a601b2a75e6cab52e4b1e6f7ac3317 (MD5) Previous issue date: 1995 / Resumo: Filmes amorfos contendo carbono, hidrogênio e nitrogênio podem ser formados a partir de plasmas de descargas luminescentes de misturas de hidrocarbonetos com nitrogênio. Neste trabalho, os mecanismos de reação que ocorrem em plasmas de misturas de C2H2-N2-Ar-He e C6H6-N2-He são estudados. Espectroscopia de emissão óptica foi utilizada para caracterizar algumas espécies químicas de interesse presentes na descarga. Através de um método chamado actinométrico, o comportamento da concentração relativa de algumas espécies químicas da descarga foi estudado, de modo a entender melhor sua origem e seu papel na formação de outras espécies. Um método actinométrico transiente, baseado na interrupção do fluxo de um dos gases da alimentação do plasma e a subsequente observação das mudanças no ambiente da descarga com o tempo foi empregado. Através deste método pode ser estudada a importância de reações na fase gasosa e de reações plasma-superficie na determinação da composição de descargas luminescentes. As descargas foram produzidas em uma câmara de vácuo de aço inoxidável através da aplicação de radiofrequência (40 Mhz, 70W) entre dois eletrodos circulares e paralelos, internos à câmara. A injeção de gases na câmara foi controlada por fluxômetros de alta precisão. Através de uma janela de quartzo, onde um espectrômetro monocromador de alta resolução foi posicionado, o plasma pôde ser observado e os estudos espectroscópicos foram então desenvolvidos. Uma grande variedade de espécies químicas reativas foi observada na descarga e particular atenção foi dada às espécies CH e CN, possíveis precursores da- formação do filme. Observações do comportamento da concentração relativa da espécie CH mostraram que a geração desta espécie não é devida exclusivamente a fragmentação da molécula do acetileno por elétrons livres da descarga. Os resultados indicam que nitrogênio contribui para sua formação. Outro importante resultado obtido está relacionado com a formação de CN. Muito embora esta espécie seja gerada por reações na fase gasosa, reações plasma-superficie são de fundamental importância para sua produção na descarga. Um modelo para o mecanismo de formação de CN a partir da superfície do filme envolvendo metaestáveis do He é proposto a partir dos dados experimentais. A estrutura química dos filmes foi analisada através de espectroscopia infravermelha de transmissão. Nestes espectros fica evidente a incorporação de nitrogênio nos filmes quando N2 está presente na descarga, pelo aparecimento de bandas devidas a grupos amina e nitrila. Observou-se também, queda na densidade de ligações C - H na estrutura do filme à medida que a proporção de N2 foi aumentada na alimentação. Alguns mecanismos elementares de formação do filme envolvendo as espécies observadas espectroscopicamente na descarga são discutidos / Abstract: Amorphous hydrogenated nitrogenated carbon films can be deposited from glow discharges of hydrocarbon - nitrogen mixtures. In this work, the reaction mechanisms taking place in glow discharges of C2H2-N2-Ar-He and C6H6-N2-He mixtures are studied. Optical emission spectroscopy was used to investigate some chemical species of interest that were present in the discharge. U sing the so-called actinometric method, the behavior of relatives concentrations of some chemical species in the discharge was studied, to improve understanding of the origin of these species. A transient actinometric method, based on the interruption of the flow one of the feed gases and the subsequent observation of the time -dependent changes in the discharge, was employed. This method allowed examination of the importance of gas phase and plasma-polymer surface reactions in the determination of the composition of the discharge. The discharges were produced in a cylindrical steel chamber, by the application of radiofrequency power ( 40 MHz, 70 W) between intemal parallel-plate copper electrodes. The introduction of gases was controlled by mass flow controllers of high precision. The plasma could be observed, via a quartz window in the chamber wall, using a monochromator spectrometer of high resolution. Many reactive chemical species were observed in the discharge and special attention was given to CH and CN, possible precursors of film formation. The dynamic actinometric data for [CH] show that this species is not only formed by fragmentation of C2H2 molecules by free electrons from the discharge. The results indicate that nitrogen contributes to the formation of CH. Another important result obtained is related to the formation of CN . Although this species is generated by gas-phase reactions, plasma-polymer surface reactions are important in its production in the discharge. A mechanism for the production of CN from the film surface, involving metastable He atoms, is developed from the experimental data. The chemical structure of the films was investigated by transmission IR spectroscopy. From the IR spectra the incorporation of nitrogen into films when N2 is present in discharge was confirmed by the appearance of absorptions due to amine and nitrile groups. It was also observed that the density of C - H bonds decreases as the portion of N2 in the feed increases. Some elementary film formation mechanisms involving the species observed spectroscopically in the discharge are discussed. / Mestrado / Física / Mestre em Física

Ce mémoire porte sur les propriétés anti-réflectives et de passivation électrique du nitrure de silicium déposé sur du silicium type n et p. Le nitrure de silicium est utilisé dans l'optique de la fabrication de cellules solaires à hétéro contacte a-Si : H/c-Si en tant que couche frontal. Des études comparatives seront faites avec l'oxyde de silicium et le silicium amorphe. Le nitrure de silicium est déposé par déposition chimique en phase gazeuse assistée par plasma (Plasma Enhanced Chemical Vapour Déposition, PECVD). Les modifications apportées par la variation de la quantité de gaz précurseurs (silane, ammoniac, di-azote) sur la composition ont été mesurées par analyses ERDA (Elastic Recoil Detection Analysis). Les relations entre la composition de la couche et les propriétés optiques et de passivations électrique ont été mesurées (Spectroscopie Infra Rouge (FTIR), Spectrométrie Photoélectronique X (SPX), …) et simulées. L’évolution de l'épaisseur et de l'indice de réfraction fut mesurée par ellipsométrie, la réflexion, l'absorption et la transmission par spectroscopie. La passivation électrique induite par les couches de nitrure de silicium a été mesurée par TRMC (Time Resolved Microwaves Conductivity). Les meilleurs paramètres de dépositions ont été définis pour une passivation électrique optimal (vitesse de recombinaison de surface < 20 cm.s-1) et une réflexion minimal (0.03% pour l = 560 nm). La reproductibilité des dépositions ainsi que celle des propriétés des couches pour plusieurs paramètres de déposition a également été étudiée / This work studies Silicon nitride and its electrical passivation and anti-reflection properties on n-type and p-type mono crystalline silicon for its use as light entrance window of an inverted a-Si:H/c-Si heterocontact solar cell in the frame of the development of low cost, high efficiency solar cells. Comparative investigation on silicon dioxide and amorphous silicon coatings were performed. Silicon nitride is deposited by plasma enhanced chemical vapour deposition and was investigated by various measurement methods. The modifications induced by variation of the precursor gas mixture (silane, ammoniac and nitrogen) on the composition were measured by Elastic Recoil Detection Analysis (ERDA). Correlation between the composition and the optical and electrical properties were studied (Fourier Transform InfraRed (FTIR) spectroscopy, XPS, …) and simulated. Evolution of the thickness and refractive indices were measured by ellipsometry.Measurements of the reflection, absorption and transmission were performed with spectroscopy. Time Resolved Microwaves Conductivity (TRMC) was used as a non-destructive method to determine the electrical passivation effect due to silicon nitride. Optimum deposition parameters were found in order to obtain the best electrical passivation (surface recombination velocity <20 cm.s-1) and the minimum reflection (0.03% of reflection for l = 560 nm). Reproducibility of the deposition method and behaviour of the layers for different pre-treatment and under annealing were also investigated

The work is aimed at preparation and characterization of thin films deposited by Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) on silicon wafers. A comprehensive characterization of the deposition system in order to determine the range of deposition conditions was a part of the study. Subsequently, the single and multi-layers were deposited from tetravinylsilane monomer. The deposition process was monitored by spectroscopic ellipsometry and mass spectroscopy. Layers and layered structures were characterized by microscopic and spectroscopic techniques. The physical and chemical properties of deposited films were studied with respect to the deposition conditions and monomer fragmentation in low-temperature plasma.

The diploma thesis is aimed at coating of glass fibers using tetravinylsilane as a monomer by Plasma-Enhanced Chemical Vapor Deposition (PECVD). The surface modified fibers were used as reinforcements for unsaturated polyester resin to form composites of controlled interphase. Chemical and mechanical properties of thin films were controled by the effective power. Determination of fiber-matrix adhesion and an influence of polymer-interface on mechanical properties of composites were characterized by Scanning Electron Microscopy (SEM) and microindentation technique using Interfacial Testing System (ITS) enabling to measure the interfacial shear strength.

No description available.

No description available.

<p>Silicon-based dielectric thin films including amorphous hydrogenated aluminium-doped silicon oxides (<em>a-</em>SiAl_xO_y:H), amorphous hydrogenated silicon nitrides (<em>a-</em>SiN_x:H), and amorphous hydrogenated silicon carbides (<em>a-</em>SiC_x:H) were deposited by remote plasma chemical vapour deposition (RPECVD) techniques including electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD) and inductively-coupled-plasma chemical vapour deposition (ICP-CVD) on silicon (Si) wafers, soda-lime glass microscope slides, and glassy carbon (C) plates. Aluminium (Al) in the SiAlO films was incorporated by way of a metalorganic Al(TMHD)₃ precursor.</p> <p>Thickness, refractive index, and growth rate of the films were measured using variable angle spectroscopic ellipsometry (VASE). Film composition was measured using energy dispersive X-ray spectroscopy (EDX) for the SiAlO films and Rutherford backscattering spectrometry (RBS) for the SiC_x films. Elastic modulus and hardness of the SiAlO and SiC_x films were measured using nanoindentation and their adhesion was characterized via progressive load scratch testing.</p> <p>All films were observed to be optically transparent at near-IR and red wavelengths with many SiN_x and SiC_x films exhibiting significant optical absorption above 2.25eV. Modification of a previously developed deposition recipe produced doubled growth rates in SiN_x and SiC_xfilms. SiAlO films were produced with up to 1.6±0.1at% aluninium (Al) incorporation, while SiC_x films with composition ranging from SiC_0.25:H to SiC₂:H could be produced depending on the growth gas flow ratios. SiAlO films exhibited hardness and reduced modulus (<em>H</em> and <em>E</em>) up to 8.2±0.4 and 75±2GPa, respectively; <em>H </em>and <em>E</em> for the SiC_xfilmsreached 11.9±0.2 and 87±3 GPa. Initially, adhesion to Si wafers was extremely poor with films delaminating at loads of 1.5±0.3N when scratched with a 3/16” alumina (Al₂O₃) sphere; implementation of a rigorous pre-deposition surface cleaning procedure produced films showing only cracking and no delamination up to 30N loads vs. a 200μm radius Rockwell C diamond stylus.</p> / Master of Applied Science (MASc)