No description available.

Graduation date: 1999

The goal of this research was to investigate an experimental infrared transmission technique and associated analysis tools that extract the in-plane residual stresses in thin single and poly-crystalline silicon sheet, and try to relate the residual stresses to physical parameters associated with silicon growth and cell processing. Previous research has suggested this concept, but many engineering and analytical details had not been addressed. In this research, a system has been designed and built. A fringe multiplier was incorporated into the system to increase the sensitivity. The error was analyzed and the resolution of the system was found to be 1.2~MPa. To convert the experimental results to residual stresses, the stress-optic coefficients of (001), (011) and (111) silicon were analyzed analytically and calibrated using a four-point bending fixture. Anisotropy in (001) and (011) silicon was found to be 33%, and the coefficient of EFG silicon is 1.7 times larger than that of (001) silicon. The polariscope together with other techniques was applied to silicon wafers after various processing steps in the manufacture of photovoltaic cells. The influence of the processing on residual stress was investigated and positive correlations between residual stresses, PL and efficiency were obtained.

In contrast to traditional conjugated polymer, the non-conjugated polycyanate network represents an interesting example to work with. Close packings among the phenylene and s-triazine rings in polycyanate may introduce £k-£k interaction and thereby, induce light emission. There is an important relationship between molecular packing and photo-luminescence properties. To clarify it, we also add aromatic fluorophore to hopefully alter the packing situation and from the response, further evaluation can be made. Detailed molecular packing in the network polycyanate can be evaluated by the molecular simulation technique. The simulation results for the pure polycyanate show that the most-likely inter-ring distance is 3 ~ 5

We study AlGaN/GaN heterostucture using temperature dependent micro-photoluminescence. Detailing its principle, operation process and analysis is to provide usage experiences for posterity's reference. The experiment's results emphasize analysis in the photoluminescence spectrum of the GaN in the heterostructure. We believe the peaks 3.486eV, 3.405eV and 3.310eV provided from Free Exciton A, FXA-1LO and FXA-2LO respectively by experience in the cultural heritage.And the fitting result of FXA peak with Gaussian curve shows the major peak is composed by (D0,X), FXA and FXB. Finally, we analyze the major peaks' characteristics varied with the temperature.

none

Abstract In this thesis, we have setup a photoluminescence (PL) measurement system to investigate the quantum well intermixing (QWI) effects on semiconductor multiple quantum-well (MQW) structures. The measured samples include 1.3mm and 1.55mm InGaAsP MQW laser structures grown by MOCVD, and 1.55mm InGaAlAs MQW structures by MBE. The QWI process was performed by rapid thermal annealing at 600¢J~800¢J in 1 min with a ~1300Å SiO2 layer sputtered on the semiconductor surface. Following the SiO2 sputtering and thermal annealing, room-temperature PL measurements were used to study the QWI effect. The result shows that the PL intensity is reduced for the MOCVD samples, while the MBE samples have up to 47 times increase of PL intensity. After QWI process, all the samples have a blue-shift in PL spectra. The 1.55mm InGaAsP laser structures by MOCVD have a maximum blue-shift of 34nm, and the MBE samples of 12nm after 800¢J annealing.

Thèse doctorat : Dispositifs de l'Electronique Intégrée : Villeurbanne, INSA : 2001. / Titre provenant de l'écran-titre. Bibliogr. p. 200-219.

Thèse de doctorat : Physique et Chimie de la Matière et des matériaux : Nancy 1 : 2007. / Titre provenant de l'écran-titre. Bibliogr.

Thèse doctorat : Dispositifs de l'Electronique Intégrée : Villeurbanne, INSA : 2008. / Titre provenant de l'écran-titre. Bibliogr. à la fin de chaque chapitre.