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Cavity quantum electrodynamics provide a platform to form a quantum network which connects individual quantum bits (qubits) via photon. Optical cavity, a device which traps photons in a confined volume can enhance the interaction between photons and the qubits serves as fundamental building block for a quantum network. Nitrogen vacancy (NV) centers in diamond has emerged as one of the leading solid-state qubits because of its long spin coherence time and single photon emission properties at room temperature. Diamond optical micro-cavities are highly sought after for coupling with NV centers. Fabrication of optical cavities from nano-crystalline diamond film has been demonstrated previously. The quality factor (Q) of such devices was limited by the material properties of the nano-crystalline diamond film. Fabrication of single-crystal diamond photonic cavities is challenging because there is no trivial way to form thin diamond film with optical isolation. In this thesis, we describe an approach to fabricate high quality single-crystal diamond optical cavities for coupling to NV centers in diamond. ingle-crystal diamond membranes were generated using an ion-slicing method. Whispering gallery modes were observed for the first time from microdisk cavities made from such material. However, the cavity Q (∼ 500) was limited by the ion damage created during processing. By using an homo-epitaxial overgrowth method, a high quality diamond film can be grown on the ion damaged membranes. Microdisk cavities with Q ∼ 3,000 were fabricated on these improved materials. Diamond membranes with a delta-doped layer of NV can be made using a slow overgrowth process which demonstrate the position and density of NV centers can be controlled in these membranes. Photonic crystal cavities with Q ∼ 4,000 were fabricated from the delta-doped membranes with cavity resonance near the zero phonon line of NV centers. Different color centers can also be introduced during the overgrowth process, and optical coupling of an ensemble of silicon vacancy centers is demonstrated by coupling to a diamond microdisk cavity. We believe the techniques developed in this thesis could contribute to building of a quantum photonic network using diamond as a platform. / Engineering and Applied Sciences

In recent years, Silicon Photonics has emerged as a promising technology for cost-effective fabrication of photonic components and integrated circuits, the application of which is recently expanding in technological fields beyond tele- and data-communications, such as sensing and biophotonics. Compact, energy-efficient laser sources with precise wavelength control are crucial for the aforementioned applications. However, practical, efficient, electrically-pumped lasers on Silicon or other group IV elements are still absent, owing to the indirect bandgap of those materials. Consequently, the integration of III-V compounds on Silicon currently appears to be the most viable route to the realization of such lasers. In this thesis, I present and explore the potential of an External Cavity (EC) hybrid III-V/Silicon laser design, comprising a III-V-based Reflective Semiconductor Optical Amplifier (RSOA) and a Silicon reflector chip, based on a two-dimensional Photonic Crystal (PhC) cavity vertically coupled to a low-refractive-index dielectric waveguide. The vertically coupled system functions as a wavelength-selective reflector, determining the lasing wavelength. Based on this architecture mW-level continuous-wave (CW) lasing at room temperature was shown both in a fiber-based long cavity scheme and die-based short cavity scheme, with SMSR of > 25 dB and > 40 dB, respectively. Furthermore, by electrically modulating the refractive index of the PhC cavity in the reflector chip, tuning of the emitted wavelength was achieved in the die-based short cavity EC laser configuration. In this way, I demonstrated the suitability of the examined EC configuration for direct frequency modulation. The proposed scheme eliminates the need for wavelength matching between the laser source and a resonant modulator, and reveals the potential of employing low-power-consumption resonant modulation in practical Silicon Photonics applications.

Cette thèse est une contribution à la modélisation et à l'étude expérimentale de cavités à cristaux photoniques à fente développées en vue d’un intégration hybride de matériaux actifs sur silicium. Parmi les travaux de conception, nous avons d'abord utilisé la méthodes des ondes planes et la méthode des différences finies (FDTD) pour concevoir une série de cavités SOI à hétérostructures, mécaniquement robustes, infiltrées par des liquides d’indices (n environ 1,5), présentant des longueurs d'onde de résonance dans la gamme des télécommunications (1,3 μm - 1,6 μm), des facteurs de qualité de plusieurs dizaines de milliers, et des volumes modaux proches de 0,03 (lambda/n)3. Nous avons ensuite étudié analytiquement et numériquement le couplage entre une cavité à cristaux photoniques à fente et un guide d'onde à fente par la théorie des modes couplés, complétée par des simulations FDTD, qui ont permis de confirmer la possibilité d'exciter efficacement les modes de fente des cavités à partir d'un guide externe. Enfin, nous avons étudié numériquement et semi-analytiquement des géométries de molécules photoniques constituées de deux cavités à cristaux photoniques à fentes couplées, dont l’écart fréquentiel entre les supermodes a pu être ajusté en amplitude et en signe. Nous avons utilisé une méthode perturbative (« Tight binding ») pour estimer les distributions spatiales des modes des molécules photoniques et prédire leurs fréquences dans plusieurs configurations de cavités à cristaux photoniques à fentes couplées.Ce travail exploratoire a été complété par une partie expérimentale qui a porté sur l'étude d'une famille de cavités de hétérostructure à cristaux photoniques à fente. Les cavités à cœur creux fabriquées ont montré des facteurs de qualité (Q) de plusieurs dizaines de milliers, associés à des volumes modaux de l’ordre de V=0,03 (λ/n)^3 après infiltration de la fente et des trous des structures par des liquides d'indice de réfraction proches de 1,46. Des facteurs Q/V supérieurs à 600 000 et atteignant 1 000 000 dans le meilleur des cas (vers lambda=1,3µm) ont ainsi été observés. Cette phase expérimentale préliminaire a donné ensuite lieu à deux types de développements.Tout d'abord, les propriétés des cavités à cristaux photoniques à fentes ont été étudiées pour des applications en détection d'indice en volume, et testées en utilisant différents liquides d'indice de réfraction compris entre 1,345 à 1,545. Les résonateurs étudiés ont présenté des sensibilités de ~ 235 nm / RIU et des facteur de mérite de détection d'indice de l’ordre de 3700, à l’état de l’art pour des résonateurs silicium intégrés à cœur creux.Dans une autre direction, le potentiel des résonateurs diélectriques à fente a été exploré en vue d’une intégration des matériaux actifs sur silicium. Un polymère dopé aux nanotubes de carbone semiconducteurs a été déposé comme matériau de couverture en vue d’étudier le renforcement de la photoluminescence (PL) des nano-émetteurs sous pompage optique vertical à lambda=740nm. Les expériences conduites ont permis de corréler le renforcement de la PL des nanotubes avec les modes de résonance des cavités et de démontrer le couplage partiel de cette PL vers des guides SOI longs de plusieurs millimètres (collection par la tranche vers lambda=1.3µm), apportant une preuve de principe d’une possible intégration des nanotubes émetteurs en photonique sur silicium. / This Ph.D. work is a contribution to the modeling and the experimental study of slot photonic crystal cavities for hybrid on-silicon integration. Among the design works, we first have used plane the wave expansion and finite-difference time-domain methods to design a series of mechanically robust (non-free membrane) SOI slot photonic crystal heterostructure cavities with resonance wavelengths in the telecommunication range, i.e. from 1.3 µm – 1.6 µm, with Q-factors of around several tens of thousands and mode volumes around 0.03(lambda/n)^3 after being infiltrated by cladding materials with typical index values around 1.5. We have then analytically and numerically studied the coupling between a slot photonic crystal cavity and a slot photonic crystal waveguide by using the coupled mode theory and FDTD simulation. Then we confirmed the ability to excite the cavity slot modes from a waveguide by using FDTD simulation. Finally, as a preliminary step towards the use of several coupled slotted cavities for future hybrid integration schemes, we have numerically and semi-analytically investigated photonic molecules made of two coupled slot photonic crystal cavities providing two different supermodes (bonding and antibonding ones) with controllable wavelength splitting. We successfully employed the tight-binding (TB) approach, which relies on the overlap of the two tightly confined cavity electric fields, to predict the supermodes frequencies and spatial distributions in several coupled slot photonic crystal cavity configurations.This exploratory work was supplemented by an experimental part, which focused on the investigation of a family of slot photonic crystal heterostructure cavities. The fabricated silicon on insulator hollow core cavities showed quality factors of several tens of thousands, i.e. from 18,000 to 31,000 and mode volume V of ~0.03(λ/n)3 after being infiltrated with liquids of ~1.46 refractive index, yielding Q/V ratio larger than 600,000, and reaching 1,000,000 in the best case (at λ ≈ 1.3 μm).This preliminary experimental stage gave rise to two types of additional developments.Firstly, the properties of the studied slot photonic crystal cavities have been investigated for index sensing applications by using different liquids with refractive index values ranging from 1.345 to 1.545. The considered photonic crystal resonators have demonstrated quality factors of several tens of thousands with sensitivities of ~235 nm/RIU and index sensing FOMs around 3,700, i.e. at the state of the art considering hollow core silicon integrated resonators.Secondly, in the view of the integration of active materials on silicon, the potential of these hollow core nanoresonators has been considered to enhance the photo-luminescence (PL) of semiconductor single-walled carbon nanotubes (SWNTs) integrated in thin films deposited on top of silicon. We have brought the first experimental demonstration of SWNTs PL collection (around lambda=1.28 µm) under vertical pumping at short wavelength (lambda=740 nm) from a slotted resonator into millimeter long integrated silicon waveguides, providing a first proof-of-concept step towards nanotube/Si-PhC integration as an active photonic platform. The reported works demonstrate the feasibility of integrating telecommunication wavelength nanotube emitters in silicon photonics as well as emphasize the role of slot photonic crystal cavities for on-chip hybrid integration.