In this study,The bottom electrode(TiN),middle insulator(Hf:SiOx),and top electrode(Pt) were deposited respectively by sputtering technique for fabricating the RRAM with MIM structure.The mole fraction of hafnium were about 5%.Instead of non-doped SiO2 base device has no switching characteristic,the Hf-doped SiO2 RRAM could be operator over 100 times and resistive state was kept stable over 104 second. In this researches,the double layer structure(Pt/Hf:SiO2/Hf:SiO2(doped N2 and NH3)).The Resistance switching characteristics of double layer structure device has particular I-V characteristics due to the doping of N.The doping of NH3 cause hydrogen plasma treatment on double layer device also bring about particular I-V characteristics. The physical mechanism we had proposed were proof by the Current-Voltage fitting and the material analysis.By control stop-voltage,the double layer structure device can operation by multi-bit. The detail physical mechanism is studied by the stable RRAM device(Ti/HfO2/TiN).In this study,the model of reset process we had proposed were proof by the special measurement methods(Constant-voltage sampling) and the principle of chemical reaction mechanism.