Lead zirconate titanate (PZT) thin films have been extensively investigated for many applications, such as MEMS devices (actuators, sensors, transducers, SAW devices) and memory devices (DRAM, NVFRAM). In this study, the sputtering deposition methods were used to fabricate the PZT thin films. Multilayer Si/SiO2/Ti/Pt was used as substrate, in which the thickness of SiO2, Ti and Pt layer was 250, 50 and 150nm. In order to improve the electric and piezoelectric properties of PZT thin films, the few nanometer thick layer of Ti on the platinum have been used for fabricating oriented PZT thin films. Then, the PZT thin films required the heat treatment for crystallization of perovskite structures. RTA and FA were taken for the heat treatment. The crystallographic and surface characteristics of PZT thin films were determined by XRD and Optical Microscope. Finally, PZT thin films deposited on two kinds of substrates were successfully transformed from amorphous phase to perovskite phase by two kinds of the annealing processes. The Ti seed layer yielded (111)-textured PZT even for thin seed layer. But, it also had less tolerances to anneal. Si/SiO2/Ti/Pt/PZT structures were the better way to fabricate the PZT thin films, which had the preferred orientations of (100¡^,(110¡^,and (200).