With the scaling of devices, integration of porous ultra low-κ dielectric materials into Cu interconnect becomes necessary. Low-k dielectric materials usually consist of a certain number of methyl groups and pores incorporated into a SiO₂ backbone structure to reduce the dielectric constant. They are frequently exposed to various plasmas, since plasma is widely used in VLSI semiconductor fabrication such as etching, ashing and deposition. This dissertation is aimed at exploring the interaction between plasma and low-κ dielectric surfaces. First, plasma assisted the atomic layer deposition (ALD) of Ta-based Cu barriers. Atomic layer deposition of Ta barriers is a self-limited surface reaction, determined by the function groups on the low-κ dielectric surface. But it was found TaCl₅ precursor could not nucleate on the organosilicate low-κ surface that was terminated with methyl groups. Radical NH[subscript x] beam, generated by a microwave plasma source, could activate the surface through exchanging with the methyl groups on the low-κ surface and providing active Si-NH[subscript x] nucleation sites for TaCl₅ precursors. Results from Monte Carlo simulation of the atomic layer deposition demonstrated that substrate chemistry was critical in controlling the film morphology. Second, the properties of low-κ dielectric materials tended to degrade under plasma exposure. In this dissertation, plasma damage of low-κ dielectric surface was investigated from a mechanistic point of view. Both carbon depletion and surface densification were observed on the top surface of damaged low-κ materials while the bulk remained largely uninfluenced. Plasma damage was found to be a complicated phenomenon involving both chemical and physical effects, depending on chemical reactivity and the energy and mass of the plasma species. With a downstream plasma source capable of separating ions from the plasma beam and an in-situ x-ray photoelectron spectroscopy (XPS) monitoring of the damage process, it was clear that ions played a more important role in the plasma damage process. Increase of dielectric constant after plasma damage was mainly attributed to moisture uptake and was confirmed with quantum chemistry calculation. Annealing was found to be effective in mitigating moisture uptake and thus restoring κ value. Finally, oxygen plasma damage to blanket and patterned low-κ dielectrics was studied in detail. Energetic ions in oxygen plasma contributed much to the loss of film hydrophobicity and dielectric constant through the formation of C=O and Si-OH. Based on results from residual gas analyses (RGA), three possible reaction paths leading to carbon depletion were proposed. This was followed by analytical solution of the evolution of carbon concentration during O₂ plasma damage. O₂ plasma damage to patterned CDO film was studied by TEM/EELS. And the damage behavior was simulated with Monte Carlo method. It was found that the charging potential distribution induced by plasma was important in determining the carbon loss in patterned low-k films. The charging potential distribution was mainly related to the geometry of low-k trench structures. To recover the dielectric constant, several recovery techniques were tried and briefly discussed. / text

Fundamental investigations have been carried out on an Inductively Coupled Plasma (ICP) operated at 148 MHz, a frequency which is nearly three times higher than any previously reported for analytical ICPs used in spectrochemical analysis. High frequency operation is expected to provide easier sample introduction into the discharge, with a consequence of less energetic conditions in the central channel. Several plasma diagnostic techniques were employed in order to determine the conditions experienced by the analyte species in this source for spectrochemical analysis. Three different torch systems were investigated at 148 MHz and compared to the "standard" 27 MHz configuration. The highest excitation temperatures and electron densities were obtained in the 27 MHz configuration, and the lowest values in the largest torch at 148 MHz. Intermediate values were obtained in the intermediate-size torches at 148 MHz. These observations correlate reasonably well with the ratio of the plasma radius to the skin depth (r/s). The skin depth defines the region in which the majority of the electrical energy is deposited into the discharge, and is smaller at 148 MHz than at 27 MHz. The measurement of electron densities also allows the estimation of how closely a particular discharge approaches Local Thermal Equilibrium (LTE). As may be expected, LTE is most closely approached in the 27 MHz arrangement. The less energetic conditions characterized by lower temperatures and electron densities result in less intense analyte emission from the high frequency ICPs. Signal-to-Background ratios and detection limits reflect this trend, but the linearity of the calibration curves and freedom from vaporization interferences are not degraded. Finally, the introduction of organic solvents is much easier, and better detection limits in an organic matrix are obtained at 148 MHz. These investigations have shown the utility of classifying the effects of changing torch sizes and operating frequencies by means of the r/s ratio. This provides the analyst with a means of selecting the general range of conditions to be employed in a particular analysis.

The picosecond optical response of germanium is investigated by performing excitation-probe experiments on a thin, intrinsic-germanium wafer maintained at 135 K. The results of three distinct experiments are reported: (1) the transmission of a single pulse is measured as a function of irradiance, (2) the probe transmission is measured at a fixed time after excitation as a function of the excitation energy, and (3) the transmission of a probe pulse is monitored as a function of time after excitation. These experiments employ 10-picosecond laser pulses at 1.06 um and Stokes-shifted pulses at 1.55-um.

"Laser micromachining is essential in today’s advanced manufacturing, of e.g., printed circuit boards and electronic components, especially laser microdrilling. Continued demands for miniaturization, in particular of high-performance MEMS components, have generated a need for smaller holes and microvias as well as smaller and more controllable spot-welds than ever before. All these neeeds require smaller taper of the microholes and more stable and controlled laser micromachining process than currently available. Therefore considerable attention must be focused on the laser process parameters that control critical specifications such as accuracy of the hole size as well as its shape and taper angle, all of which highly influence quality of the laser micromachining processes. Determination of process parameters in laser micromachining, however, is expensive because it is done mostly by trial and error. This Dissertation attempts to reduce the experimental time and cost associated with establishing the process parameters in laser micromachining by employing analytical, computational, and experimental solutions (ACES) methodology."