This thesis presents a solid state approach to the ion detection system used in the back-end of modern mass spectrometers. Although various techniques already exist to detect ions – even with the sensitivity of a single particle, the existing techniques require high voltage or lower operation temperature to counteract the noise inherent in the system. The suggested design presents an alternative to the more popular detection system whereby the requirement of high operation voltage or low operation temperature can be precluded. This is made possible through the gate capacitance of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This thesis presents the design that utilizes the MOSFET as an ion signal amplifier; including the simulation and silicon testbench results.