Post-fabrication tuning of filters is usually realized by adding number of elements for tuning the frequency and/or controlling the couplings between the resonators. The task of these tuning elements is to control resonators center frequency, inter-resonators coupling and input/output couplings. While the most common tool for the post-fabrication tuning is to use tuning screws and rods, it is not usually practical to tune a planar filter with these tools. This thesis introduces a novel method for global post-fabrication tuning of microwave filters by designing and adding a passive distributed-element circuit in parallel to the detuned filter. The idea, which is demonstrated by experimental results, has several advantages over traditional techniques for filter tuning that use screws. The quality factor of resonator reduces significantly after adding the tuning screws while the proposed method does not affect the Q of resonators. The most important advantage of the proposed compensator circuit is that it can be employed without knowing details of the detuned filters. Since the compensator circuit will be added in parallel to the detuned filter, it will not affect the elements of filter individually. So whether the filter is planar or cavity, the proposed circuit can be used for the tuning. The experimental results obtained demonstrate the validity of this method. The dissertation also presents a novel concept for designing a center frequency and bandwidth tunable microstrip filter by using GaAs varactors. The proposed isolated coupling structure which is used in this filter makes the bandwidth tuning possible by reducing the loading effect of coupling elements on the resonators. The center frequency of this filter can be also tuned by using a different set of varactors connected to resonators. A 3-pole filter based on this concept has been designed and simulated. The concept can be expanded to higher order filters.

Post-fabrication tuning of filters is usually realized by adding number of elements for tuning the frequency and/or controlling the couplings between the resonators. The task of these tuning elements is to control resonators center frequency, inter-resonators coupling and input/output couplings. While the most common tool for the post-fabrication tuning is to use tuning screws and rods, it is not usually practical to tune a planar filter with these tools. This thesis introduces a novel method for global post-fabrication tuning of microwave filters by designing and adding a passive distributed-element circuit in parallel to the detuned filter. The idea, which is demonstrated by experimental results, has several advantages over traditional techniques for filter tuning that use screws. The quality factor of resonator reduces significantly after adding the tuning screws while the proposed method does not affect the Q of resonators. The most important advantage of the proposed compensator circuit is that it can be employed without knowing details of the detuned filters. Since the compensator circuit will be added in parallel to the detuned filter, it will not affect the elements of filter individually. So whether the filter is planar or cavity, the proposed circuit can be used for the tuning. The experimental results obtained demonstrate the validity of this method. The dissertation also presents a novel concept for designing a center frequency and bandwidth tunable microstrip filter by using GaAs varactors. The proposed isolated coupling structure which is used in this filter makes the bandwidth tuning possible by reducing the loading effect of coupling elements on the resonators. The center frequency of this filter can be also tuned by using a different set of varactors connected to resonators. A 3-pole filter based on this concept has been designed and simulated. The concept can be expanded to higher order filters.

L'ère des technologies CMOS fortement submicroniques et des circuits à hautes performances temporelles et énergétiques exige la réduction de l'impact sur les circuits : de la fluctuation du procédé de fabrication (P), de la tension d'alimentation (V) et de la température (T). Il est donc nécessaire de mettre en place des capteurs ou ring oscillateurs sur puce dédiés à la qualification intrinsèque des circuits intégrés en termes de PVT. Les capteurs seront activés pendant la phase de test des circuits ou pendant leur phase de fonctionnement normal, et les mesures seront converties en données numériques permettant de classifier les performances temporelles et énergétiques du système-sur-puce. Dans ce cadre, la présente thèse en milieu industriel a permis le développement de techniques et d'algorithmes de compensations post-fabrication en réduisant la consommation et/ou augmentant la vitesse du circuit. Précisément, les algorithmes validés au niveau silicium utilisent l'ajustement de la tension d'alimentation pour une compensation à gros-grain, ainsi que l'ajustement de la tension des substrats des transistors NMOS et PMOS pour une compensation à fin-grain. / The new requirement for nanometer CMOS technologies enabling optimal speedand power performances is to increase the integrated circuits' robustness under thefluctuation of the PVT parameters: Process (P), Voltage (V), and Temperature (T). In thisway, identifying the exact process on a die per die basis using on-chip sensors or ringoscillators becomes a necessity. This hardware (sensors) is used to measure the intrinsicperformance of the silicon either during industrial test or while applications are running. Thesensors' data are converted to a digital format in order to classify parts at the manufacturingstage (speed binning). Within this context, the present thesis has focused on the developmentof post-manufacturing compensation algorithms in order to minimise power consumptionand/or maximise speed. More precisely, the algorithms validated at the silicon level combineboth the voltage scaling for large-grain tuning, and the body biasing for fine-grain tuning.

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