The development and advancement of microelectronics technology have been dramatically. The time and cost, for research and optimization of process and equipment, can be saved by using flow simulation. The governing equations of flow field, inside chemical vapor deposition (CVD) reactor, are constructed, dispersed, and solved by grid mesh and numerical method. At present, rapid thermal process (RTP) is becoming more important and popular for thin-film depositing technology. In this thesis, vertical type single wafer RTCVD reactor in poly-silicon thin-film depositing process is analyzed by numerical method. Several operating process parameters, such as: (a) the gap between shower head and wafer surface, (b) gas inlet velocity in shower head, and (c) operating pressure inside chamber of reactor, are considered for discussion and analysis of steady or unsteady phenomenon in three steps of thin-film depositing process, including (¢¹) heating for wafer, (¢º) deposition in steady state, (¢») cooling after deposition etc.. As shown in the results, each operating parameters performs different relations and phenomenon in these steady and unsteady steps: Operating pressure can affect the activity of chemical reaction strongly in unsteady or steady region. Larger gap between wafer and shower head causes less influence by flow effects or buoyancy. And also, radiation heat transfer, which is adopted by RTCVD process, can decrease the influence of some parameters on flow field.

Low cost, rapid and high thermal by IR heating, rapid cooling and high efficiency, there are RTP (Rapid Thermal Processing) properties. We can use RTP for annealing, diffusion, contacting, oxidation and others. Rapid temperature change and IR heating can be followed positive effects in the silicon substrate. This paper is focused on annealing by RTP. Wafers were p-type monocrystalline CZ silicon with different bulk minority carrier lifetime. Minority carrier lifetime was measured by MW-PCD (Microwave Photoconductance Decay) before and after thermal processing.