Following the concept utilize binary selenides as precursors with rapid thermal process (RTP) to fabricate CuInSe2 (CIS) thin film. In order to find the most promise process to get high quality CIS, several precursor stacking sequences have been tested which including SLG/In-Se/Cu-Se/Se, SLG/Cu-Se/In-Se/Se, SLG/0.1In-Se/Cu-Se/0.9/In-Se/Se, and SLG/0.5In-Se/Cu-Se/0.5/In-Se/Se, and the experiment result shows SLG/In-Se/Cu-Se/Se is the most suitable stacking sequence. Subsequently, varying Se flux to obtain several kinds copper selenides (Cu7Se4, Cu3Se2, CuSe, CuSe2) and indium selenides, try to find the suitable pairs through these binary selenides in SLG/In-Se/Cu-Se/Se structure. The suitable combination phase in Cu-Se precursor layer is CuSe blend with CuSe2. Large grain size CIS, about 1£gm, can be prepared in such precursor phase with film thickness between 700nm to 1£gm, strong (112) prefer-orientation vertical with substrate as well as good adhesion. Films were characterized through scanning election microscopy (SEM) to obtain grain size, surface morphology as well as film thickness. The X-ray diffractometer (XRD) was used to identify phase contained in whole film, and the phase constitution near surface layer was examined by Raman spectroscopy. If there are some second phases remaining in the thin film, combining the phase examination result of XRD and Raman spectroscopy, it can be estimate the second phase exist in the surface layers or internal film area.