BATISTA JÚNIOR, Francisco Florêncio. Propriedades de transportes em fios e poços quânticos. 2009. 73 f. Dissertação (Mestrado em Física) - Programa de Pós-Graduação em Física, Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2009. / Submitted by Edvander Pires (edvanderpires@gmail.com) on 2015-05-04T19:05:12Z No. of bitstreams: 1 2009_dis_ffbatistajunior.pdf: 2157799 bytes, checksum: 21fa9e91409293ec4b1914c4cd297c44 (MD5) / Approved for entry into archive by Edvander Pires(edvanderpires@gmail.com) on 2015-05-07T14:47:19Z (GMT) No. of bitstreams: 1 2009_dis_ffbatistajunior.pdf: 2157799 bytes, checksum: 21fa9e91409293ec4b1914c4cd297c44 (MD5) / Made available in DSpace on 2015-05-07T14:47:19Z (GMT). No. of bitstreams: 1 2009_dis_ffbatistajunior.pdf: 2157799 bytes, checksum: 21fa9e91409293ec4b1914c4cd297c44 (MD5) Previous issue date: 2009 / Semiconductor materials are responsible for the large development in electronic industry, what made it possible the creation of new devices. The heterostructures gave a large impulse to the solid-state physics. Semiconductors study is nowadays concentrated in the low-dimensional systems, as quantum wells, quantum wires, quantum dots and quantum rings. In this work, we investigate the transport properties of heterostructured quantum wires of double barrier. We begin with calculation of radial confinement energy in a quantum wire InAs/InP of double barrier. We use a cylindrical model of wire with gradual and abrupt nterfaces. Transmission coefficients are calculated. We study its behavior varying barriers width, distance between them and the wire radius. In the future, we will use these results to calculate electric current through the device. We also investigate transport properties of bidimensional systems with self-energy potential. We use heterostructures of Si/SiO2 and Si/HfO2. We solve Poisson’s equation with epsilon depending on z, expanding the potential in a Fourier-Bessel series, finding the image potential of the barriers. We calculate the electric current through this potential in function of the applied voltage, varying temperature and the distance between the barriers. We also consider gradual interfaces for the simple barrier case. / Materiais semicondutores são os principais responsáveis pelo grande crescimento da indústria eletrônica e pelo surgimento de novas tecnologias. A criação de heteroestruturas possibilitou um grande impulso à física do estado sólido. Atualmente, o estudo de semicondutores está concentrado em sistemas de dimensionalidade reduzida, como os poços, fios, pontos e aneis quânticos. Neste trabalho, investigamos as propriedades de transporte em fios quânticos heteroestruturados de barreira dupla e em sistemas bidimensionais de barreira simples e dupla. Iniciamos com o cálculo da energia do confinamento radial no fio quântico InAs/InP de barreira dupla. Usamos um modelo de fio cilíndrico com e sem interfaces graduais. Calculamos as transmissões através das barreiras e estudamos o comportamento das mesmas variando a largura das barreiras, a distância entre elas e o raio do fio. Futuramente utilizaremos estes resultados para o cálculo da corrente elétrica através do dispositivo. Também investigamos as propriedades de transporte em sistemas bidimensionais com potencial de auto-energia. Utilizamos heteroestruturas formadas por Si/SiO2 e Si/HfO2. Sendo as constantes dielétricas dos óxidos diferentes do silício, resolvemos a equação de Poisson com epsilon dependente de z. Expandimos o potencial em uma série de Fourier-Bessel, encontrando, por fim, o potencial imagem para as barreiras. Calculamos a corrente elétrica através deste potencial em função da voltagem, variando a temperatura, a distância entre as barreiras. Também levamos em conta as interfaces graduais para o caso de barreira simples.

Neste trabalho investigamos o tunelamento ressonante em estruturas de dupla barreira GaAs/(AlGa)As que foram fabricadas em mesas quadradas de tamanho lateral mesoscópico e macroscópico (&#8764 10&#956m &#215 10&#956m). Uma camada tipo &#948 com diferentes concentrações de Silício foi incorporada no centro do poço quântico. As características I(V) mostram algumas estruturas em posição de voltagem abaixo do pico de ressonância principal que são atribuídas a estados relacionados a impurezas. Tais estados localizados estão presentes no poço quântico com energias de ligação bem maiores do que um doador de Silício isolado. Estes estados de maior energia de ligação são atribuídos a pares de doadores distribuídos aleatoriamente. Em alguns dispositivos onde estados relacionados a impurezas podem ser identificados isoladamente na característica I(V), um efeito destacável pode ser observado. Um pica na característica I(V) aparece nas mais baixas temperaturas medidas (abaixo de 1K) quando o nível de Fermi no emissor se alinha com o estado localizado relacionado a impureza. Tal pico e atribuído a interação Coulombiana entre o elétron no sitio localizado e os elétrons no gás bidimensional (emissor). / We have investigated resonant tunneling in GaAs/(AlGa)As double barrier structures which have been fabricated into square mesoscopic and macroscopic size mesas (&#8764 10&#956m &#215 10&#956m) A &#948 layer with different concentrations of Silicon donors was incorporated at the centre of the quantum well. The I(V) characteristics show some features below the threshold for the main resonance that are due to impurity related state. Such localized states are found to be related to the presence of donor impurities in the vicinity of the quantum well with binding energies much higher than the single isolated hydrogen donor. These higher binding energy states are identified as being due to random pairs of shallow donors. In some devices where an isolated impurity related state can be identified in the 1(V characteristics a remarkable effect is observed. A peak appears at low temperatures (below 1K) in the 1(V) characteristics when the emitter Fermi level matches the localized state. Such feature is attributed to the Coulomb interaction between the electron on the localized site and the electrons in the Fermi sea of the 2DEG.

Made available in DSpace on 2014-07-29T15:07:06Z (GMT). No. of bitstreams: 1 DissErivelton Oliveira Alves.pdf: 643061 bytes, checksum: 32148288b33769364a665f4bc2c83e1c (MD5) Previous issue date: 2006-08-02 / We investigate the resonant tunneling of electrons and holes in an asymmetric double quantum bit CdTe / CdMnTe in the presence of electric and magnetic fields applied along the growth direction. We show that in this case it is possible to achieve a condition of simultaneous resonant tunneling of electrons and holes with spin set, ie, a resonant tunneling of excitons polarized. Then we calculated the excitonic binding energy as a function of applied fields, showing the strong dependence of the binding energy with the tunneling of carriers. The electronic structure was calculated using the k ~ ~ p multiband Kane model. The eigenstates were obtained by solving numerically the equations ° C ~ the effective mass using the method of inverse power. The effects of lattice strain were treated by the Bir-Pikus model. The energy calculation of excitonic Dial-Up was conducted using the variational method. We consider the perfectly abrupt interfaces of the heterostructures, ie effects of enlargement of the interfaces were neglected. / Investigamos o tunelamento ressonante de elétrons e buracos em um pouco quântico duplo assimétrico de CdTe/CdMnTe na presença de campos elétricos e magnéticos aplicados ao longo da direção de crescimento. Mostramos que neste caso é possível alcançar uma condição de tunelamento ressonante simultâneo de elétrons e buracos com spin definido, isto é , um tunelamento ressonante de éxcitons polarizados. Em seguida calculamos a energia de ligação excitônica em função dos campos aplicados, mostrando a forte dependência da energia de ligação com o tunelamento dos portadores. A estrutura eletrônica foi calculada usando o método ~k ~p no modelo multibandas de Kane. Os autoestados foram obtidos resolvendo-se numericamente a equa¸c ao da massa efetiva usando o método das potência inversa. Os efeitos de tensão da rede cristalina foram tratados pelo modelo de Pikus-Bir. O cálculo de energia de ligaçãoo excitônica foi realizado usando o método variacional. Consideramos as interfaces da heteroestrutura perfeitamente abruptas, isto é, efeitos de alargamento das interfaces foram desprezados.

京都大学 / 0048 / 新制・課程博士 / 博士(理学) / 甲第17771号 / 理博第3894号 / 新制||理||1562(附属図書館) / 30578 / 京都大学大学院理学研究科化学専攻 / (主査)教授 谷村 吉隆, 准教授 安藤 耕司, 教授 寺嶋 正秀 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM

No description available.

<p>The role of the surroundings, or <italic> environment </italic>, is essential in understanding funda- mental quantum-mechanical concepts, such as quantum measurement and quantum entanglement. It is thought that a dissipative environment may be responsible for certain types of quantum (i.e. zero-temperature) phase transitions. We observe such a quantum phase transition in a very basic system: a resonant level coupled to a dissipative environment. Specifically, the resonant level is formed by a quantized state in a carbon nanotube, and the dissipative environment is realized in resistive leads; and we study the shape of the resonant peak by measuring the nanotube electronic conductance.</p><p>In sequential tunneling regime, we find the height of the single-electron conductance peaks increases as the temperature is lowered, although it scales more weakly than the conventional T<super>-1</super>. Moreover, the observed scaling signals a close connec- tion between fluctuations that influence tunneling phenomenon and macroscopic models of the electromagnetic environment.</p><p>In the resonant tunneling regime (temperature smaller than the intrinsic level width), we characterize the resonant conductance peak, with the expectation that the width and height of the resonant peak, both dependent on the tunneling rate, will be suppressed. The observed behavior crucially depends on the ratio of the coupling between the resonant level and the two contacts. In asymmetric barriers the peak width approaches saturation, while the peak height starts to decrease.</p><p>Overall, the peak height shows a non-monotonic temperature dependence. In sym- metric barriers case, the peak width shrinks and we find a regime where the unitary conductance limit is reached in the incoherent resonant tunneling. We interpret this behavior as a manifestation of a quantum phase transition.</p><p>Finally, our setup emulates tunneling in a Luttinger liquid (LL), an interacting one-dimensional electron system, that is distinct from the conventional Fermi liquids formed by electrons in two and three dimensions. Some of the most spectacular properties of LL are revealed in the process of electron tunneling: as a function of the applied bias or temperature the tunneling current demonstrates a non-trivial power-law suppression. Our setup allows us to address many prediction of resonant tunneling in a LL, which have not been experimentally tested yet.</p> / Dissertation

Les travaux présentés dans cette thèse s’inscrivent dans le cadre général de la description de l’effet tunnel dans la limite semi classique h → 0. Nous présentons une nouvelle méthode de calcul direct de la largeur des doublets tunnel. L’expression obtenue est basée sur l’utilisation de traces d’opérateurs quantiques, dont l’opérateur d’évolution Û (T)prolongé analytiquement à l’aide d’un temps complexe T. L’étape suivante consiste en un développement semi classique de ces traces. Nous nous plaçons dans le cadre des systèmes intégrables unidimensionnels afin d’insister sur l’importance d’un temps complexe et on montre que le choix d’un chemin du temps [t] adapté, lors du calcul semi classique des traces, fournit un critère de sélection efficace des trajectoires complexes dominantes. Nous verrons que cette approche retrouve la technique des instantons dans la limite d’un temps purement imaginaire et qu’elle permet d’inclure les descriptions, inaccessibles par une rotation de Wick complète, de l’effet tunnel dynamique et résonant. Nous montrons également comment adapter cette méthode au taux de transmission tunnel d’un état localisé dans un minimum local vers un continuum d’états. Enfin, nous proposerons, en guise de perspectives,d’étudier l’effet tunnel résonant à partir de modèles intégrables présentant des îlots stables entourés de chaînes de tores pour lesquels nous tenterons d’adapter la théorie de l’effet tunnel assisté par les résonances. / The present work is developed within the general framework of the description of the tunneling effect in the semiclassical limit h → 0. We introduce a new method for the direct computation of the tunneling splittings. We get a trace formula involving the evolution operator continued in the complex plane using a complex time T. The next step is to obtain semi classical expansion of these traces. Within the framework of one dimensionnalintegrable systems, we show the key role of a complex time. When performing semiclassical calculations, an appropriate complex-time paths provide an efficient criterion in order toselect the dominant complex trajectories involved in the traces. We will show that our approach includes instanton techniques in the limit of a purely imaginary time and describes dynamical tunneling and resonant tunneling for which a complete Wick is not sufficient.We will show also how our method works for the decay rates. Finally, as a perspective,we will study resonant tunneling from integrable models which exhibit prominent islands surrounded by chains of tori. From these models, we will try to apply the theory of resonant assisted tunneling to integrable systems.

Materiais semicondutores sÃo os principais responsÃveis pelo grande crescimento da indÃstria eletrÃnica e pelo surgimento de novas tecnologias. A criaÃÃo de heteroestruturas possibilitou um grande impulso à fÃsica do estado sÃlido. Atualmente, o estudo de semicondutores està concentrado em sistemas de dimensionalidade reduzida, como os poÃos, fios, pontos e aneis quÃnticos. Neste trabalho, investigamos as propriedades de transporte em fios quÃnticos heteroestruturados de barreira dupla e em sistemas bidimensionais de barreira simples e dupla. Iniciamos com o cÃlculo da energia do confinamento radial no fio quÃntico InAs/InP de barreira dupla. Usamos um modelo de fio cilÃndrico com e sem interfaces graduais. Calculamos as transmissÃes atravÃs das barreiras e estudamos o comportamento das mesmas variando a largura das barreiras, a distÃncia entre elas e o raio do fio. Futuramente utilizaremos estes resultados para o cÃlculo da corrente elÃtrica atravÃs do dispositivo. TambÃm investigamos as propriedades de transporte em sistemas bidimensionais com potencial de auto-energia. Utilizamos heteroestruturas formadas por Si/SiO2 e Si/HfO2. Sendo as constantes dielÃtricas dos Ãxidos diferentes do silÃcio, resolvemos a equaÃÃo de Poisson com epsilon dependente de z. Expandimos o potencial em uma sÃrie de Fourier-Bessel, encontrando, por fim, o potencial imagem para as barreiras. Calculamos a corrente elÃtrica atravÃs deste potencial em funÃÃo da voltagem, variando a temperatura, a distÃncia entre as barreiras. TambÃm levamos em conta as interfaces graduais para o caso de barreira simples. / Semiconductor materials are responsible for the large development in electronic industry, what made it possible the creation of new devices. The heterostructures gave a large impulse to the solid-state physics. Semiconductors study is nowadays concentrated in the low-dimensional systems, as quantum wells, quantum wires, quantum dots and quantum rings. In this work, we investigate the transport properties of heterostructured quantum wires of double barrier. We begin with calculation of radial confinement energy in a quantum wire InAs/InP of double barrier. We use a cylindrical model of wire with gradual and abrupt nterfaces. Transmission coefficients are calculated. We study its behavior varying barriers width, distance between them and the wire radius. In the future, we will use these results to calculate electric current through the device. We also investigate transport properties of bidimensional systems with self-energy potential. We use heterostructures of Si/SiO2 and Si/HfO2. We solve Poissonâs equation with epsilon depending on z, expanding the potential in a Fourier-Bessel series, finding the image potential of the barriers. We calculate the electric current through this potential in function of the applied voltage, varying temperature and the distance between the barriers. We also consider gradual interfaces for the simple barrier case.

No description available.

No description available.