Abstract We use InGaAlAs and InGaAsP as materials of 1.55mm multi-quantum-well spot-size converter ridge waveguide lasers. On lateral conversion, we fabricate a taper ridge waveguide. On vertical conversion, we add guard layers on each side of active layer. For InGaAlAs ridge waveguide lasers, simulation results show a far field 16o ¡Ñ 27o¡]lateral ¡Ñ vertical¡^at guard layer width S = 0.1 mm with 300-150-50 mm narrow-tapered waveguide structure. Due to large Zn background contamination in the MOCVD growth chamber, we did not fabricate the InGaAlAs lasers successfully. For the InGaAsP ridge waveguide lasers, we measure a far field 18o ¡Ñ 28o and a threshold current 23 mA for the 200-250-50 mm narrow-tapered waveguide structure; a far field 20o ¡Ñ 26o and a threshold current 22 mA for the 200-250-50 mm wide-tapered waveguide structure.