No description available.

We study the behavior of electric fields in and around dielectric and metal nanoparticles, and prepare the ground for their applications to a variety of systems viz. photovoltaics, imaging and detection techniques, and molecular spectroscopy. We exploit the property of nanoparticles being able to focus the radiation field into small regions and study some of the interesting nonlinear, and quantum coherence and interference phenomena near them. The traditional approach to study the nonlinear light-matter interactions involves the use of the slowly varying amplitude approximation (SVAA) as it simplifies the theoretical analysis. However, SVVA cannot be used for systems which are of the order of the wavelength of the light. We use the exact solutions of the Maxwell's equations to obtain the fields created due to metal and dielectric nanoparticles, and study nonlinear and quantum optical phenomena near these nanoparticles. We begin with the theoretical description of the electromagnetic fields created due to the nonlinear wavemixing process, namely, second-order nonlinearity in an nonlinear sphere. The phase-matching condition has been revisited in such particles and we found that it is not satisfied in the sphere. We have suggested a way to obtain optimal conditions for any type and size of material medium. We have also studied the modifications of the electromagnetic fields in a collection of nanoparticles due to strong near field nonlinear interactions using the generalized Mie theory for the case of many particles applicable in photovoltaics (PV). We also consider quantum coherence phenomena such as modification of dark states, stimulated Raman adiabatic passage (STIRAP), optical pumping in $4$-level atoms near nanoparticles by using rotating wave approximation to describe the Hamiltonian of the atomic system. We also considered the behavior of atomic and the averaged atomic polarization in $7$-level atoms near nanoparticles. This could be used as a prototype to study any $n-$level atomic system experimentally in the presence of ensembles of quantum emitters. In the last chapter, we suggested a variant of a pulse-shaping technique applicable in stimulated Raman spectroscopy (SRS) for detection of atoms and molecules in multiscattering media. We used discrete-dipole approximation to obtain the fields created by the nanoparticles.

Thesis (PhD (Physics))--Stellenbosch University, 2008. / The advent of high intensity short pulse lasers has opened the door to investigating buried solid-solid interfaces through the technique of optical second harmonic generation (SHG). This has led to extensive study of technologically important systems such as the Si/SiO2 interface. In this study, SHG is employed to study the interface between highly boron doped p+-type Si and its native oxide layer (SiO2). Previous studies from this laboratory have extensively investigated the photo-induced charge transfer process across the Si/SiO2 interface in the case of undoped natively oxidized Si by means of SHG, with initial SHG measurements being performed on boron doped p+-type Si. The natively oxidized p+-type Si/SiO2 sample was placed on a computer controlled positioning system which allowed for translation of the sample and rotation around the azimuth. The laser system employed was characterized in terms of spectral composition, pulse duration, pulse repetition rate, spatial pro le and pulse energy in order to ensure quantitative measurements. The SHG signal generated from the sample interface was recorded in re ection. Under the applied irradiation conditions, defects are created at the interface by the near infra red (NIR) femtosecond radiation from the laser. These defects are then populated via multi-photon processes by electrons and to a lesser extent holes. The charge transfer across the interface induces an interfacial electric eld. This photo-induced electric eld is in addition to the built-in interfacial electric eld caused by positive ionization of naturally occurring interfacial defects due to the strong doping of the bulk Si. It is this interfacial electric eld, consisting of the built-in doping induced eld and the photo-induced electron and hole elds, that is probed by SHG. The SHG signal is strongly dependent on the magnitude of this interfacial electric eld as the electric eld induced second harmonic (EFISH) signal dominates all other contributions to the observed SHG signal in the case of the Si/SiO2 system. The temporal evolution of the SHG signal is recorded for di erent intensities from virgin as well as the pre-irradiated samples. This yields information about the time scales on which the charge separation occurs as well as the in- uence of existing photo-induced trap sites on the charge separation process, since the strength of the SHG signal is an indirect measure of the interfacial electric eld strength. The angular dependence of the SHG signal (SH rotational anisotropy measurements) for both the initial signal (when the doping induced electric eld dominates) and the saturated signal (when the electron induced electric eld dominates) is measured. Both these measurements show a four fold symmetry but with a relative 45 phase shift between them. This iii is taken as con rmation of the reversal of the interfacial electric eld direction. The initial SHG signal as a function of intensity is also recorded for di erent incident wavelengths. The variation in the non-quadratic dependence of the initial SHG signal on the incident intensity is attributed to a resonant enhancement of two-photon absorption and subsequent screening of the interfacial electric eld by charge carriers. The measurement performed and the results obtained contribute to the understanding of the photo-induced charge separation process across buried solid-solid interfaces, speci cally as it applies to the important Si/SiO2 interface.

Thesis (PhD (Physics))--University of Stellenbosch, 2010. / ENGLISH ABSTRACT: Silicon/silicon dioxide (Si/SiO2) interface is widely used in microelectronics as the gate between the drain and source of most metal oxide semiconductor field effect transistors (MOSFETs). The functionality, reliability and electrical properties of such transistors are strongly dependent on the quality of the Si/SiO2 structure forming the gate. Characterization of the Si/SiO2 interface is important in understanding device degradation therefore the Si/SiO2 interface is a subject of intensive investigation. Research studies of Si/SiO2 interfaces using optical methods have been reported by many groups around the world but to date many open questions still exist. The physics of photoinduced trap or defect generation processes and the subsequent trapping of charge carriers, the precise role of photoinduced interfacial electric field in altering optical properties of the Si/SiO2 interface and its role in affecting the second harmonic (SH) yield measurements are not well understood. In this work a commercial near infrared femtosecond (fs) laser source [1.55 eV, 75 ± 5 fs, 10 nJ, 80 MHz] is used to study native Si/SiO2 interfaces of free standing single crystalline Si membrane and bulk Si. Optical second harmonic (SH) generated at the Si/SiO2 interfaces of a Si membrane in reflection and for the first time in transmission is demonstrated as well as stationary, single colour, pump-probe reflectivity measurements from the Si/SiO2 interface of bulk n-type Si. The experimental setups for the second harmonic generation (SHG) and pump-probe techniques were designed and implemented, and measurements were recorded by a computer controlled data acquisition system. Free standing Si membrane samples were successfully produced at the Institut f¨ur Photonische Technologien (IPHT) in Jena, Germany from bulk Si using a chemical etching process and were characterised using the z-scan technique. The penetration depth of light with a photon energy of 1.55 eV in silicon allows transmission of the fundamental fs laser pulses through the Si membrane (∼ 10 μm in thickness) and this is exploited to generate a SH signal in transmission from the Si/SiO2 interfaces of the Si membrane. In the presence of sufficiently intense fs laser light defects are created at the interfaces and populated by multiphoton transfer of charges from Si to SiO2 where they are subsequently trapped. The transfer of charge establishes interfacial electric fields across the interfaces of the Si membrane and this enhances SHG. This phenomenon is called electric field induced second harmonic (EFISH) generation. To our knowledge, EFISH measurements from interfaces of Si membrane performed in transmission are demonstrated for the first time in the present study. The demonstration of EFISH in transmission revealed new results which allowed us to provide additional perspectives on the EFISH generation process at Si/SiO2 interfaces never reported before. The temporal response of SH signals from virgin spots were recorded at different incident laser powers for both reflection and transmission geometries. The SH responses measured in transmission were observed to be time dependent and show an increase during irradiation of the sample corresponding to EFISH process. A series of SH measurements were recorded at different laser powers to compare the magnitudes of SH yield in each detection geometry for a single Si/SiO2 interface. The magnitude of the SH yield measured in transmission was higher than expected and surpassed the SH yield measured in reflection. The expectation is based on the fact that the local intensity of the fundamental beam at the second interface where the SH in transmission is generated is low compared to the local intensity at the first interface where the SH in reflection originates. A physical model is developed to consistently interpret the experimental results obtained in this study. In this model we established the origin of EFISH signals in each detection geometry, explain the unexpected high SH signals measured in transmission and provide an analysis of the time constants extracted from SH response in transmission and reflection. In addition, we also report for the first time stationary pump-probe reflectivity measurements from bulk n-type Si(111) samples with native oxide. A strong pump beam was focused on the same spot as a weak probe beam from the same fs laser source. The change in reflectivity of the Si(111)/SiO2 system was recorded by monitoring the change in intensity of the weak reflected probe beam. The temporal evolutions of the reflectivity of the material were recorded at different pump powers. The reflectivity of the material increases over several minutes of irradiation and reaches steady-state after long time irradiation. The change in reflectivity of the material is attributed to a nonlinear process called Kerr effect, and the temporal response arises from the photoinduced interfacial electric field across the Si(111)/SiO2 interface caused by multiphoton charge transfer from bulk Si(111) to the SiO2 layer. The results reported in this study contribute to the understanding of the photoinduced interfacial electric field caused by charge carrier separation across buried solid-solid interfaces. They also reveal nonlinear optical processes such as the Kerr effect caused by charge dynamics across the interface in addition to the well known SHG process. / AFRIKAANSE OPSOMMING: Die silikon/silikon dioksied (Si/SiO2) skeidingsvlak word algemeen gebruik in mikro-elektronika as die hek tussen die put en die bron van die meeste metaaloksied halfgeleier veld-effek transistors (MOSFETs). Die werkverrigting, betroubaarheid en elektriese eienskappe van sulke transistors word grootliks bepaal deur die kwaliteit van die Si/SiO2 struktuur wat die hek vorm. Karakterisering van die Si/SiO2 skeidingsvlak is belangrik om die degradering van die transistor te verstaan en daarom is die Si/SiO2 skeidingsvlak die onderwerp van intensiewe ondersoek. Ondersoek van die Si/SiO2 skeidingsvlak deur van optiese metodes gebruik te maak is geraporteer deur verskeie internasionale groepe, maar daar bestaan tot vandag toe nog n groot aantal onbeantwoorde vrae. Die fisika van die fotogenduseerde generering van defekte en van posisies waarin ladings gevang kan word, asook die daaropvolgende vasvang van ladingsdraers, die presiese rol van die fotoge¨ınduseerde elektriese veld oor die skeidingsvlak in die verandering van die optiese eienskappe van die Si/SiO2 skeidingsvlak en die grootte van die tweede harmoniek (SH) sein word nog nie goed verstaan nie. In hierdie werk word n kommersile naby-infrarooi femtosekonde (fs) laserbron [1.55 eV, 75 ± 5 fs, 10 nJ, 80 MHz] gebruik om natuurlike Si/SiO2 skeidingsvlakke van vrystaande enkelkristallyne Si membrane en soliede Si te bestudeer. Optiese tweede harmoniek (SH) wat by die Si/SiO2 skeidingsvlakke van ’n Si membraan gegenereer word - in refleksie en vir die eerste keer in transmissie - is gedemonstreer, asook stasionˆere, een-golflengte pomp-toets refleksiemetings op die Si/SiO2 skeidingsvlak van soliede n-gedoteerde Si. Die eksperimentele opstellings vir die tweede harmoniek generering (SHG) en pomp-toets tegnieke is ontwerp en uitgevoer en metings is opgeneem deur ’n rekenaarbeheerde dataversamelingstelsel. Vrystaande Si membraan monsters is suksesvol by die Institut f¨ur Photonische Technologien (IPHT) in Jena, Duitsland vervaardig uit soliede Si deur ’n chemiese etsproses en is gekarakteriseer met behulp van die z-skanderingstegniek as deel van hierdie studie. Die diepte waartoe lig met ’n fotonenergie van 1.55 eV in silikon indring laat die transmissie van die fundamentele fs laserpulse deur die Si membraan (met ∼ 10 μm dikte) toe en dit word ontgin om ’n SH sein van die Si/SiO2 skeidingsvlakke van die Si membraan in transmissie te meet. In die teenwoordigheid van fs laserlig met voldoende intensiteit word defekte by die skeidingsvlakke geskep en bevolk deur meer-foton ladingsoordrag van die Si na die SiO2 waar die ladings daaropvolgens vasgevang word. Die oordrag van ladings skep elektriese velde oor die skeidingsvlakke van die Si membraan en dit versterk die SHG. Hierdie verskynsel word elektriese veld ge¨ınduseerde tweede harmoniek (EFISH) generering genoem. Sover ons kennis strek is die meting van EFISH seine van skeidingsvlakke van Si membrane in transmissie vir die eerste keer in hierdie studie gedemonstreer. Die demonstrasie van EFISH in transmissie het nuwe resultate opgelewer wat ons toegelaat het om bykomende perspektiewe op die EFISH genereringsproses by Si/SiO2 skeidingsvlakke te verskaf waaroor nog nooit vantevore verslag gedoen is nie. Die tydafhanklike gedrag van die SH seine van voorheen onbestraalde posisies is gemeet by verskillende drywings van die inkomende laserbundel vir beide die refleksie en transmissie geometrie¨e. Die gedrag van die SH sein in transmissie is waargeneem om tydafhanklik te wees en ’n toename te toon gedurende bestraling van die monster in ooreenstemming met EFISH prosesse. ’n Reeks van SH metings is opgeneem by verskillende laserdrywings om die groottes van die SH opbrengste in elke meetgeometrie vir ’n enkele Si/SiO2 skeidingsvlak te vergelyk. Die grootte van die SH opbrengs wat in transmissie gemeet is was ho¨er as verwag is en het die grootte van die SH opbrengs in refleksie oortref. Die verwagting is gebaseer op die feit dat die lokale intensiteit by die tweede skeidingsvlak waar SH in transmisie gegenereer word relatief laag is in vergelyking met die lokale intensiteit by die eerste skeidingsvlak waar SH in refleksie ontstaan. ’n Fisiese model is ontwikkel om die eksperimentele resultate wat in hierdie studie verkry is op ’n konsekwente wyse te interpreteer. In hierdie model het ons die oorsprong van EFISH seine in elke meetgeometrie vasgestel, die onverwagte ho¨e SH seine wat in transmissie gemeet is verklaar en ’n analise van die tydkonstantes wat uit die SH gedrag in transmissie en refleksie afgelei is gedoen. Verder rapporteer ons ook vir die eerste keer stasionˆere pomp-toets reflektiwiteitsmetings van soliede n-gedoteerde Si(111) monsters met ’n natuurlike oksied. ’n Sterk pompbundel is gefokus op dieselfde posisie as ’n swak toetsbundel van dieselfde laserbron. Die verandering in reflektiwiteit van die Si(111)/SiO2 stelsel is gemeet deur die verandering in die intensiteit van die swak weerkaatste toetsbundel te monitor. Die tydevolusie van die reflektiwiteit van die mate riaal is gemeet by verskillende pompdrywings. Die reflektiwiteit van die materiaal neem toe gedurende etlike minute van bestraling en bereik ’n stasionˆere toestand na ’n lang tyd van bestraling. Die verandering in reflektiwiteit van die materiaal word toegeskryf aan ’n nielini ˆere prosess, naamlik die Kerr effek, en die tydafhanklike gedrag ontstaan as gevolg van die fotoge¨ınduseerde elektriese veld oor die Si(111)/SiO2 skeidingsvlak wat veroorsaak word deur meer-foton ladingsoordrag van die soliede Si(111) na die SiO2 laag. Die resultate wat in hierdie studie gerapporteer word dra by tot die verstaan van die fotoge ¨ınduseerde elektriese veld oor die skeidingsvlak wat veroorsaak word deur die skeiding van ladingsdraers oor die bedekte kristal-kristal skeidingsvlak. Dit lˆe ook nie-liniˆere optiese prosesse soos die Kerr effek bloot wat veroorsaak word deur die dinamika van ladings oor die skeidingsvlak, bykomend tot die bekende SHG proses.

The extraction of high power with high beam quality from semiconductor lasers has long been a goal of semiconductor laser research. Optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) have already shown the potential for their high power high brightness operation. In addition, the macroscopic nature of the external cavity in these lasers makes intracavity nonlinear frequency conversion quite convenient. High-power high-brightness VECSELs with wavelength flexibility enlarge their applica-tions. The drawbacks of the VECSELs are their poor spectral characteristics, thermal-induced wavelength shift and a few-nm-wide linewidth.The objective of this dissertation is to investigate tunable high-power high-brightness VECSELs with spectral and polarization control. The low gain and microcavity reson-ance of the VECSEL are the major challenges for developing tunable high-power VECSELs with large tunability. To overcome these challenges, the V-shaped cavity, where the anti-reflection coated VECSEL chip serves as a folding mirror, and an extremely low-loss (at tuned wavelength) intracavity birefringent filter at Brewster's angle are employed to achieved the high gain, low-loss wavelength selectivity and the elimination of microcavity. This cavity results in multi-watt TEM00 VECSELs with a wavelength tuning range of 20~30 nm about 975 nm. Also the longitudinal mode discrimination introduced by birefringent filter makes the linewidth narrow down to 0.5 nm. After the tunable linearly polarized fundamental beam is achieved, the tunable blue-green VECSELs are demonstrated by using type I intracavity second-harmonic generation. The spectral control of VECSELs makes it possible to apply them as an efficient pump source for Er/Yb codoped single-mode fiber laser and to realize the spectral beam combining for multi-wavelength high- brightness power scaling.In this dissertation, theory, design, fabrication and characterization are presented. Rigorous microscopic many-body theory of the quantum well gain, based on semiconductor Bloch equations and k.p theory, is introduced. The closed loop design tool based on this theory is not only used to design the VECSEL structure, but also used as a precise on-wafer diagnostics tool by the experiment/theory comparison of the photo-luminescence. The characterization of the wafer shows that the modeling is in good agreement with the measured results.The VECSEL high power high brightness performance relies on the fabrication of the chip. The fabrication method of the VECSEL chip, which provides the optically smooth surface and good heat dissipation, is presented. The anti-reflection coating on the chip surface can significantly improve the slope efficiency of VECSEL when high reflectivity output coupler is used. Over 12-W VECSEL cw output power with 43 % slope efficiency is demonstrated at 0 oC. A beam quality factor (M^2 factor) of 1.75 is obtained at 11 W output power.

Konjuguotieji polimerai kaip funkcinės medžiagos gali būti panaudoti įvairiuose prietaisuose: organiniuose šviestukuose, organiniuose lauko tranzistoriuose, organiniuose saulės elementuose. Šio darbo tikslas - nustatyti fotogeneruotų krūvininkų pernašos dėsningumus π – konjuguotuose polimeruose panaudojant naują žadinimo-zondavimo metodą pagrįstą išoriniu elektriniu lauku indukuota antrosios optinės harmonikos generacija. Pagrindinis dėmesys buvo skiriamas pernašos dinamikai. Molekulinių darinių fizikos laboratorijoje buvo įrengta matavimų schema ir įvertintas metodo tinkamumas krūvio pernašos tyrimams. Buvo atlikti krūvio pernašos matavimai trijuose skirtinguose konjuguotuosiuose polimeruose. Nustatyta, kad fotogeneruotų krūvininkų judris tuoj po sužadinimo yra daug didesnis lyginant su stacionaria judrio verte, o krūvio pernašos dinamiką lemia konjuguoto polimero struktūrinė hierarchija, krūvininkų judėjimas yra daugialypis, susidedantis iš greito judėjimo viena polimero grandine ar konjuguotais polimero grandinės segmentais ir lėto šokavimo tarp atskirų polimero grandinių Pirmą kartą detaliai išnagrinėta šviesa sugeneruotų krūvininkų pernašos dinamika konjuguotuose polimeruose. Darbo rezultatai suteikia žinių apie fundamentalius krūvininkų pernašos mechanizmus konjuguotuose polimeruose, kurios gali būti panaudotos kuriant organinius elektronikos prietaisus. / Conjugated polymers are promising candidates for applications in all kinds of organic optoelectronic devices: OLEDs, organic field-effect transistors (OFETs) and organic photovoltaic cells. The main goal of this work was to investigate transport features of photogenerated electrical charge in pi-conjugated polymers by means of novel technique based on time-resolved electric field-induced second harmonic generation (TREFISH). TREFISH measurement setup was implemented in the laboratory of Molecular compounds physics, and applicability of the method has been verified. Measurements were performed on three different model polymers: methyl substituted ladder-type poly(para-phenylene) (MeLPPP), poly(fluorene-co-benzothiadiazole) (F8BT) and poly(spirobifluorene-co-benzothiadiazole) (PSF-BT), having different morphological and chemical structure. It has been found that motion of photogenerated charge carriers in π-conjugated polymer films experiences rapid dynamics after excitation. Different time domains of charge transport were distinguished. Initial fast transport of photogenerated charge carriers corresponds to the carrier motion along the single polymer chain or conjugated segment of the polymer chain. Slowest carrier motion phase is well described by the stochastic drift, which is attributed to interchain jumps and determines the macroscopic equilibrium mobility. Thus, the equilibrium mobility value is not applicable to the transport on nanometer scale up to tens of nanometers... [to full text]

The aim of the project described in this thesis is to synthesise new functional molecules which interact with light for neurophysiological applications. In particular, I describe a family of amphiphilic porphyrins with large first hyperpolarisabilities which are used as SHG contrast agents and voltage-sensitive probes. In addition I detail a methodological microscopy tool and a novel caged form of a neuronal ion-channel antagonist. Chapter 1 introduces the key concepts underlying the use of dyes as SHG contrast agents. In particular it focuses on aspects of molecular design, covering both the amphiphilicity and nolinearity required by the target molecule. It covers quantification of the nonlinear properties of SHG stains, then surveys a number of examples which showcase the flexibility of SHG imaging as a biomedical technique. Chapter 2 describes a family of amphiphilic porphyrins with large first hyperpolarisabilities. Working from the structure-property relationships identified in Chapter 1, we fully characterise these dyes and demonstrate that they can be used in SHG imaging. We demonstrate that these molecules may also be tuned by complexation of a metal ion which can modulate their photophysical and solubility behaviour. Chapter 3 provides a description of how to determine the orientational distribution of dipolar dyes in a membrane by multiphoton microscopy. We measure the signal intensity of the dye in a model membrane system then find distributional moments which lead to the distribution itself. Chapter 4 explores whether off-axis contributions to the first hyperpolarisability tensor can significantly augment the dominant on-axis contribution from the main dipolar charge-transfer band. We synthesise and characterise a series of cis-donor cis-acceptor porphyrin compounds and explore their biophysical characteristics. Chapter 5 is the culmination of this project and after discussing method development, goes on to show how we measure the voltage sensitivity of an amphiphilic porphyrin SHG dye. We compare the archetypal porphyrin dye chromophore with three commercially available styryl dyes and demonstrate that our dye has greater sensitivity and a more rapid response. Chapter 6 describes a side project, the use of a photolabile cage to protect MK801, a neuronal ion-channel antagonist. By developing a water soluble photolabile cage using molecular design techniques, we are able to release MK801 in neurons with precise spatiotemporal control, allowing us to pinpoint the locus of two key neurophysiological processes.

<p>Second harmonic generation (SHG) microscopy and Raman microscopy were used for qualitative and quantitative analysis of pharmaceutical materials. Prototype instruments and algorithms for sampling strategies and data analyses were developed to achieve pharmaceutical materials analysis with low limits of detection and short measurement times<br></p><p>Manufacturing an amorphous solid dispersion (ASD), in which an amorphous active pharmaceutical ingredient (API) within polymer matrix, is an effective approach to improve the solubility and bioavailability of a drug. However, since ASDs are generally metastable materials, they can often transform to produce crystalline API with higher thermodynamic stability. Analytical methods with low limits of detection for crystalline APIs were used to assess the stability of ASDs. With high selectivity to noncentrosymmetric crystals, SHG microscopy was demonstrated as an analytical tool, which exhibited a limit of detection of 10 ppm for ritonavir Form II crystals. SHG microscopy was employed for accelerated stability testing of ASDs, which provided a four-decade dynamic range of crystallinity for kinetic modeling. An established model was validated by investigating nucleation and crystal growth based on SHG images. To achieve <i>in situ</i> accelerated stability testing, controlled environment for in situstability testing (CEiST) was designed and built to provide elevated temperature and humidity, which is compatible with a commercial SHG microscope based on our research prototype. The combination of CEiST and SHG microscopy enabled assessment of individual crystal growth rates by single-particle tracking and nucleation rates for individual fields of view with low Poisson noise. In addition, SHG microscopy coupled with CEiST enabled the study of heterogeneity of crystallization kinetics within pharmaceutical materials.<br></p><p>Polymorphism of APIs plays an important role in drug formulation development. Different polymorphs of identical APIs may exhibit different physiochemical properties, e.g., solubility, stability, and bioavailability, due to their crystal structures. Moreover, polymorph transitions may take place during the manufacturing process and storage. Therefore, analytical methods with high speed for polymorph characterization, which can provide real-time feedback for the polymorphic transition, have broad applications in pharmaceutical materials characterization. Raman spectroscopy is able to determine the API polymorphism, but is hampered by the long measurement times. In this study, two analytical methods with high speed were developed to characterize API polymorphs. One is SHGmicroscopy-guided Raman spectroscopy, which achieved the speed of 10 ms/particle for clopidogrel bisulfate. Initial classification of two different polymorphs was based on SHG images, followed acquisition of Raman spectroscopyat the selected positions to determine the API crystal form. Another approach is implementing of dynamic sampling into confocal Raman microscopy to accelerate Raman image acquisition for 6-folds. Instead of raster scanning, dynamic sampling algorithm enabled acquiring Raman spectra at the most informative locations. The reconstructed Raman image of pharmaceutical materials has <0.5% loss of image quality with 15.8% sampling rate.<br></p>

Apresentamos os resultados de preparação e caracterização de cristais orgânicos (L-arginina fosfatada monohidratada - LAP - e L-lisina monohidroclorada dihidratada - L-Lys.HCl) que possuem propriedades ópticas lineares e não lineares desejáveis para aplicações tecnológicas, incluindo telecomunicações, computação óptica, armazenamento óptico de dados, processamento óptico da imagem, conversão de freqüência, entre outras. Desenvolvemos uma metodologia, simples e barata, para a eliminação de fungos e micróbios que surgem nas soluções destes compostos devido às características dos aminoácidos L-arginina e L-lisina. A adição do fungicida azida de sódio possibilitou-nos manter soluções destes compostos livres de quaisquer microorganismos na câmara de crescimento por um período de seis meses. Usando-se as técnicas de evaporação controlada do solvente a abaixamento da temperatura grandes cristais de LAP e L-Lys.HCl foram obtidos com qualidade óptica adequada para a confecção de dispositivos optoeletrônicos. Cristais de até 6 cm&sup3 de L-Lys.HCl foram pela primeira vez preparados e caracterizados opticamente. A caracterização estrutural permitiu-nos solucionar a divergência existente na indexação do difratograma de pó dos cristais de LAP e indexar os picos de difração de raios-X da L-lisina monohidroclorada dihidratada. / Growth and characterization of organic crystal (L-arginine phosphate monohydrate - LAP - and L-lysine monohydrochloride dihydrate L-Lys. HCl) with desirable linear and nonlinear optical properties for technological application including telecommunications, optical computing, optical data storage, optical image processing, harmonic frequency generation, and others are presented. We developed a simple and cheap method to eliminate fungi and microbes that arises in solution due to characteristics of L-arginine and L-lysine aminoacids. The addition of sodium azide fungicide maintained the solutions of these compounds free of microorganisms in the growth chamber for six months. Using a accurately controlled solvent evaporation technique and slow cooling technique large crystals of LAP and L-Lys.HCI were obtained with optical quality appropriate to the development of optoelectronic devices. L-Lys.HCl crystals up to 6 cm&sup3 were growth and optically characterized for the first time. The divergence in the powder diffraction indexation of LAP crystals was eliminated by structural characterization and the X-ray diffraction peaks of the L-lysine monohydrochloride diliydrate crystals were indexed.

Neste trabalho é feito um estudo da formatação de pulsos ultracurtos de laser de Ti:Safira para a geração de segundo harmônico em cristal de KDP. Para a formatação dos pulsos, é utilizado um aparato que inclui um modulador espacial de luz de cristal líquido (LC SLM), que altera unicamente a fase espectral dos pulsos. Este aparelho tem a vantagem de não introduzir perdas durante a propagação da luz, além de sua ação ser controlada via computador, através de um software em LabVIEW. Utilizando uma função senoidal, é feito um estudo das limitações do controle da geração do segundo harmônico provindas da pixelação do LC SLM, isto é, do fato de que os elementos moduladores possuem tamanhos finitos e produzem uma modulação discreta ao longo das componentes espectrais do pulso. É apresentada a geração de luz sintonizável em torno de 400 nm por duplicação de frequências de pulsos cuja fase espectral é modulada por uma soma de funções senoidais de frequências diferentes. A largura de banda do ultravioleta produzido é da ordem de 1 nm, em contraste com a largura de linha de cerca de 12 nm do segundo harmônico gerado na ausência de modulação do pulso fundamental. A sintonização é feita basicamente através de uma varredura na fase das funções moduladoras do pulso fundamental. Esse tipo de sintonização nessa região do espectro possui algumas aplicações, tais como a microscopia seletiva por dois fótons ou mesmo a espectroscopia de um fóton. Para comprovar a utilidade da geração de segundo harmônico sintonizável, é apresentada uma medida espectroscópica da transmissão em uma amostra de cloreto de európio, sendo que os resultados obtidos concordaram com as medidas da mesma amostra realizadas em um espectrofotômetro, com o mínimo de transmissão em cerca de 394 nm. / This work presents a study on the shaping of ultrashort pulses of a Ti:Sapphire laser for second harmonic generation in KDP crystals. To achieve the pulse shaping, a setup based on a phase-only crystal-based spatial light modulator (LC SLM) is used. This device has the advantage of low loss, and can be computer controlled, by means of a LabVIEW software. The use of a sinusoidal function, allows to study the limitations of the second harmonic generation due to the pixelation of the LC SLM, i. e., due to the fact that the modulating elements have finite sizes and produce a stepwise modulation along the spectral components of the pulse. The generation of tunable light around 400 nm by frequency doubling of laser pulses is presented for the case where the spectral phase is modulated by a sum of sinusoidal functions with different frequencies. The linewidth of the ultraviolet band produced is narrower than 1 nm, in contrast to the 12 nm linewidth of the non-modulated incident spectrum. The tuning is done primarily through a sweep in the phase of the modulating functions of the fundamental pulse. The possibility of tuning in this region of the spectrum has a few applications, such as in selective two-photon microscopy or even in one photon spectroscopy. To demonstrate the usefulness of tunable second harmonic generation, a spectroscopic measurement of the transmission in a sample of europium chloride is presented, and the results agreed with the measures of those performed in a spectrophotometer, with the minimal transmission occurring around 394 nm.