Indium-antimonide films have been prepared for experiments involving the application of high electric fields to this semiconducting material. The films have been deposited onto a mica substrate. To obtain high mobilities, a multilayer construction with subsequent annealing was used. Measurements of the complex propagation coefficient of a section of waveguide containing the film have been made and the results agree closely with a numerical solution of a theoretical model proposed for the structure. The design of a new type of a pulse generator for these high electric field experiments is described. / Thesis / Master of Engineering (ME)