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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
Search results
Showing 1 to 10 of 18 (0.08 seconds)| 1 |
Amorphous silicon memory devices : the forming process and filamentary conductionGage, Simon M. January 1989 (has links)
No description available.
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Photo-CVD of hydrogenated amorphous silicon and dioxide using an external deuterium lampBhatnagar, Yashraj Kishore January 1989 (has links)
No description available.
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Computer simulation of SiOâ†x structure based on thin film Si 2p peaks of X-ray photoelectron spectroscopySahota, Makhan Singh January 1992 (has links)
No description available.
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Scanning infra-red microscope studies of inhomogeneities in Si and GaAs ingot materialsLaczik, Z. January 1992 (has links)
No description available.
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Range, damage and annealing investigations for boron implanted at low energy into siliconValizadeh, Reza January 1990 (has links)
No description available.
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Theoretical studies of GaP:V and GaP:NiAl-Ahmadi, Mohammed Saeed January 1990 (has links)
No description available.
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Electron microscope studies of cadmium mercury tellurideLyster, Martin January 1989 (has links)
No description available.
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A investigation of the manufacture and characterisation of enhancement-type buried channel M.O.S. transistorsMorgan, Fearghal John January 1986 (has links)
No description available.
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Analysis of single and coupled dielectric rib waveguides and discontinuitiesHusain, M. N. January 1991 (has links)
No description available.
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Nanowire-based InP solar cell materialsSaj, Damian, Saj, Izabela January 2012 (has links)
In this project, a new type of InP solar cell was investigated. The main idea is that light is converted to electrical current in p-i-n photodiodes formed in thin InP semiconductor nanowires epitaxially grown on an InP substrate. Two different types of samples were investigated. In the first sample type (series C03), the substrate was used as a common p-type electrode, whereas a short p-segment was included in all nanowires for the second sample type (B07). Current – voltage (I-V) characteristics with and without illumination were measured, as well as spectrally resolved photocurrents with and without bias. The main conclusion is that the p-i-n devices showed good rectifying behavior with an onset in photocurrent that agrees with the corresponding energy band gap of InP. An interesting observation was that in series B07 (with included p-segments) the photocurrent was determined by the band gap of hexagonal Wurtzite crystal structure, whereas series C03 (without p-segments) displayed a photocurrent dominated by the InP substrate which has a Zincblende crystal structure. We found that the overall short-circuit current was ten as large for the latter sample, stressing the importance of the substrate as a source of photocurrent.
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