Isolated inverters feature the freedom in voltage step-up/down, electrical safety, and modularity. Among them, pseudo-dc-link inverters have the advantage of high efficiency due to their single-stage structure. Traditionally, pseudo-dc-link inverters are based on pulse-width-modulated converters, which suffer from hard switching, the need for auxiliary components, and/or high current stresses. Meanwhile, the series resonant converter has been prevalent in past decades due to its simplicity and high efficiency. Therefore, it is intriguing to design a single-stage inverter based on a series resonant converter. However, there are limited papers regarding such an inverter topology. To figure out the reason, basic modulation methods proposed or implied in the literature are summarized and evaluated through circuit simulation software. It turns out each basic modulation method has at least one critical drawback in modulation range, hard switching, and/or high current stresses. Given the deficiencies in the basic modulation methods, a hybrid modulation method is proposed here. The proposed method combines variable-frequency modulation in the high-output region and short pulse-density modulation in the low-output region. In this way, all the aforementioned critical drawbacks can be greatly alleviated. The hybrid modulation method is compared to the basic modulation methods based on three design metrics: the rms value of the resonant current, the magnetic flux of the transformer, and the turn-off current. By these design metrics that directly related to power losses, the benefit of the proposed method in terms of efficiency can be explained. Moreover, a power loss model is also established to provide more insights into the inverter's efficiency performance. It helps demonstrate how the selection of resonant tank and other factors affects the power loss distribution. Also, an inverter design procedure is introduced and a prototype is built to verify the proposed modulation method. The results show that the switching losses, especially the turn-on loss, can be well suppressed, and the losses in other passive components are well restrained. This implies the proposed method is suitable for high-frequency applications. Other than efficiency, output waveform quality is also important for an inverter. However, the changing plant model makes the controller design difficult. Therefore, a third-order model established by other researchers has been adopted to identify the pole locations. In addition, a gain-varying method is proposed for the compensator to reduce the gain variance caused by different operating conditions. The experimental results show that without the gain-varying method, the inverter may have issues in slow tracking and/or instability. Finally, in some scenarios, the inverter based on a series resonant converter can be regarded as a module. A multi-modular inverter can be formed by connecting the modules in an input-parallel-output-series configuration. In this case, a technique termed sequential waveform synthesis can be applied. The proposed technique can extend the region of variable-frequency modulation and shorten the region of short pulse-density modulation. This is beneficial to efficiency based on an analysis. With more than a certain amount of modules connected, the short pulse-density modulation can even be waived, which means the multi-modular inverter can be free from turn-on loss. In summary, this dissertation focuses on developing modulation methods for inverters based on the series resonant converter. Soft-switching feature and high efficiency are the two top priorities. The analytic and experimental results are provided based on standalone applications. / Doctor of Philosophy / Inverters are an important part of a modern electric power system, as they convert dc electric power into ac electric power. In some applications, inverters with electrical insulation (isolated inverters) are preferred due to the need for engineering freedom, safety, and other reasons. However, each conventional isolated inverter has some of the following drawbacks: hard-switching in semiconductor devices, high circulating current, poor transformer utilization, and high complexity. These drawbacks limit the efficiency and compactness of an inverter system, making the system less attractive to practical applications. An inverter based on a series resonant converter seems to be a solution because the series resonant converter is known for being simple and highly-efficient. However, there has yet to be a proper modulation method for it. Therefore, the main contribution of this dissertation is to propose a hybrid modulation method. With the proposed method, the inverter can operate with high efficiency. Furthermore, the hard-switching can be well suppressed, which means a high-frequency, compact design is possible. Besides the theory of the proposed method, this dissertation also includes a power loss model, a hardware design procedure, and analytic comparisons with other methods. In addition, a digital approach to control the inverter is proposed. Without it, the output voltage waveform may be highly distorted. Finally, another sequential control strategy is proposed in this dissertation for an integrated system. The integrated system is composed of multiple inverters based on a series resonant converter. With the sequential control strategy, the overall output waveform quality of the integrated system can be improved.

In comparison with PWM converters, resonant converters are gaining increasing popularity for cases in which efficiency and power density are at a premium. However, the lack of an accurate small-signal model has become an impediment to performance optimization. Many modeling attempts have been made to date. Besides the discrete time-domain modeling, most continuous-time modeling approaches are based on fundamental approximation, and are thus unable to provide sufficient accuracy for practical use. An equivalent circuit model was proposed by Yang, which works well for series resonant converters (SRCs) with high Q (quality factor), but which is inadequate for LLC resonant converters. Furthermore, the model is rather complicated, with system orders that are as high as five and seven for the SRC and LLC converter, respectively. The crux of the modeling difficulty is due to the underlying assumption based on the use of a band-pass filter for the resonant tank in conjunction with a low-pass output filter, which is not the case for most practical applications. The matter is further complicated by the presence of a rectifier, which is a nonlinearity that mixes and matches the original modulation frequency. Thus, the modulation signal becomes intractable when using a frequency-domain modeling approach. This dissertation proposes an extended describing function modeling that is based on a Fourier analysis on the continuous-time-domain waveforms. Therefore, all important contributions from harmonics are taken into account. This modeling approach is demonstrated on the frequency-controlled SRC and LLC converters. The modeling is further extended to, with great accuracy, a charge-controlled LLC converter. In the case of frequency control, a simple third-order equivalent circuit model is provided with high accuracy up to half of the switching frequency. The simplified low-frequency model consists of a double pole and a pair of right-half-plane (RHP) zeros. The double pole, when operated at a high switching frequency, manifests the property of a well-known beat frequency between the switching frequency and the resonant frequency. As the switching frequency approaches the resonant frequency of the tank, a new pair of poles is formed, representing the interaction of the resonant tank and the output filter. The pair of RHP zeros, which contributes to additional phase delay, was not recognized in earlier modeling attempts. In the case of charge control, a simple second-order equivalent circuit model is provided. With capacitor voltage feedback, the order of the system is reduced. Consequently, the resonant tank behaves as an equivalent current source and the tank property is characterized by a single pole. The other low-frequency pole represents the output capacitor and the load. However, the capacitor voltage feedback cannot eliminate the high-frequency poles and the RHP zeros. These RHP zeros may be an impediment for high-bandwidth design if not properly treated. Based on the proposed model, these unwanted RHP zeros can be mitigated by either changing the resonant tank design or by proper feedback compensation. The accurate model is essential for a high-performance high-bandwidth LLC converter. / Doctor of Philosophy / For high-frequency power conversion, resonant converters are increasingly popular. However, the lack of an accurate small-signal model has become an impediment to performance optimization. The existing equivalent circuit model and its simplified circuit were based on fundamental approximation, where the resonant tank was deemed a good band-pass filter. These models work well for series resonant converters (SRCs) with high Q (quality factor), but are inadequate for LLC resonant converters. The crux of the modeling difficulty is due to the fact that the operation of this type of resonant converter is based on the use of a band-pass filter in conjunction with a low-pass filter. The matter is further complicated by the presence of a rectifier, which is a nonlinearity that mixes and matches the original modulation frequency. Thus, the modulation signal becomes intractable when using a frequency-domain modeling approach. This dissertation proposes an extended describing function modeling that is based on a Fourier analysis on the continuous-time-domain waveforms. Therefore, all important contributions from harmonics are taken into account. This modeling approach is demonstrated on the frequency-controlled SRC, frequency-controlled LLC converter, and charge-controlled LLC converter, and the resulting models are proven to be accurate at all frequencies. A simple equivalent circuit model is provided that targets the frequency range below the switching frequency. This simple, accurate model is able to predict the small-signal behaviors of the LLC converter with high accuracy at half of the switching frequency. At high modulation frequencies, the resonant converter behaves like a non-minimum phase system, which was neither recognized nor characterized before. This property can be represented by RHP zeros, and these RHP zeros may be an impediment for high-bandwidth design if not properly treated. Based on the proposed model, these unwanted RHP zeros can be mitigated by either changing the resonant tank design or by proper feedback compensation. Accurate modeling is essential for a high-performance high-bandwidth LLC converter.

Solar energy as one type of the renewable energy becomes more and more popular which has led to increase the photovoltaic (PV) installations recently. One of the PV installations is the power conditioning system which is to convert the maximum available power output of the PV modules to the utility grid. Single-phase microinverters are commonly used to integrate the power to utility grid in modular power conditioning system. In the two-stage microinverter, each PV module is connected with a power converter which can transfer higher output power due to the tracking maximum power point (MPP) capability. However, it also has the disadvantages of lower power conversion efficiency due to the increased number of power electronics converters. The primary objective of this thesis is to develop a high-efficiency microconverter to increase the output power capability of the modular power conditioning systems. A topology with hybrid modes of operation are proposed to achieve wide-input regulation while achieving high efficiency. Two operating modes are introduced in details. Under high-input conditions, the converter acts like a buck converter, whereas the converter behaves as a boost converter under low-input conditions. The converter operates as the series resonant converter with normal-input voltage to achieve the highest efficiency. With this topology, the converter can achieve zero-voltage switching (ZVS) and/or zero-current switching (ZCS) of the primary side MOSFETs, ZCS and/or ZVS of the secondary side MOSFETs and ZCS of output diodes under all operational conditions. The experimental results based on a 300 W prototype are given with 98.1% of peak power stage efficiency and 97.6% of weighted California Energy Commission (CEC) efficiency including all auxiliary and control power under the normal-input voltage condition. / Master of Science

With the growth of renewable energy usage and energy storage adoption in recent decades, people have started to reevaluate the possible roles of dc systems in current and future electrical systems. The dc voltage distribution has been applied in various applications, such as data centers and aircraft industry, for high efficiency and power density. However, for some applications such as subsea gas and oil fields, and ocean observatory systems, the dc current distribution is preferred over dc voltage distribution for its low cost and robustness against cable faults. Design and control of dc power distribution systems for different applications is an emerging research area with complex technical challenges. This dissertation solves the technical challenges in analysis, design, modeling, control and protection of series resonant converters (SRCs) for dc current distribution applications. An optimum design that has high efficiency, high reliability, and minimum required control efforts for the SRC with constant input current has been achieved and demonstrated by applying the analysis and design procedures developed in this dissertation. The modeling and analysis presented in this dissertation represents an operating condition that has not been studied in the literature and could be easily extended to other resonant converter topologies. Explicit analytical expressions have been provided for all key transfer functions, including input impedance and control-to-output, offering valuable resources to design feed-back regulation and to evaluate system stability. Based on the control strategies and control design presented in this dissertation, stable and reliable operation of dc current distribution systems with long distance cable has been achieved and demonstrated. The proposed analysis, design procedure, stability evaluation, control strategy and protection techniques in this dissertation can be applied to a wide range of similar scenarios as well, which greatly increases their value.

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This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. From a system point of view the SiC power device could decrease the cost and complexity of cooling, reduce the size and weight of the system, and enable the system to endure harsher environments. The three main SiC power device designs are discussed with a focus on the BJT. The SiC BJT is compared to the SiC junction field-effect transistor (JFET) and the metal-oxide semiconductor field-effect transistor (MOSFET). The potential of employing SiC power devices in applications, ranging from induction heating to high-voltage direct current (HVDC), is presented. The theory behind the state-of-the-art dual-source (2SRC) base driver that was presented by Rabkowski et al. a few years ago is described. This concept of proportional base drivers is introduced with a focus on the discretized proportional base drivers (DPBD). By implementing the DPBD concept and building a prototype it is shown that the steady-state consumption of the base driver can be reduced considerably.  The aspects of the reverse conduction of the SiC BJT are presented. It is shown to be of importance to consider the reduced voltage drop over the base-emitter junction. Last the impact of SiC unipolar and bipolar devices in series-resonant (SLR) converters is presented. Two full-bridges are designed and constructed, one with SiC MOSFETs utilizing the body diode for reverse conduction during the dead-time, and the second with SiC BJTs with anti-parallel SiC Schottky diodes. It is found that the SiC power devices, with their absence of tail current, are ideal devices to fully utilize the soft-switching properties that the SLR converters offer. The SiC MOSFET benefits from its possibility to utilize reverse conduction with a low voltage drop. It is also found that the size of capacitance of the snubbers can be reduced compare to state-of-the-art silicon technology. High switching frequencies of 200 kHz are possible while still keeping the losses low. A dead-time control strategy for each device is presented. The dual control (DuC) algorithm is tested with the SiC devices and compared to frequency modulation (FM). The analytical investigations presented in this thesis are confirmed by experimental results on several laboratory prototype converters. / <p>QC 20150529</p>

This thesis deals with switched mode power supplies based on resonant principle to achieve high efficiency. Several ways of switched mode power supplies optimalisation are described as part of the work to achieve better efficiency. Priparily, the new generation of switching elements based on SiC and resonant topology are used to achieve significant switching loss minimization. The selected resonant topology is simualted in detail and then built with focus on high efficiency. The main content of the work consists in the design and realization of the switched mode power supply with selected control algorithms and their comparison. The problems associated with usage of new SiC MOSFET generation in TO-247-4L package are being solved within the design and implementation of the power source. To solve the main problems, new 3rd SiC MOSFET gate driver was developer for working with switching frequencies in hundreds of kHz and resisting very high voltage stress on the controlled transistor. The next part of the gate driver is the overcurrent protection. The overcurrent limit can be set easily by changing one component. This protection reacts very quickly in hundreds of nanoseconds, so it is capable of saving the converter even in branch failure and going to hard short circuit. The functional sample of the series resonant converter was built and revated in the work. The converter based on 3. Generation of SiC MOSFET transistors from Cree in a modern case TO-247-4L was built. For this inverter, it was also necessary to develop both the control scheme and the resonance frequency tracking to achieve accurate switching and thus achieve the use of the resonant principle of the converter to the maximum extent possible. The result of this work is up to 3 kW converter with adjustable output voltage while maintaining high efficiency up to 96%.

The project deals with the design of a switch-mode power supply (SMPS) with a medium and high power output. The power supply uses multiphase control switching. Electric energy is converted through a series parallel LLC resonant circuit to reach the maximum efficiency with a small size and cost efficiency of the designed power supply. The semiconductor switches use ZVS (Zero Voltage Switching) on the primary side and ZCS (Zero Current Switching) on the secondary side of the converter. The design of the converter is based on the knowledge of the high power output converters (types of switching, art topologies) and resonant topologies (series resonant circuit – SRC, parallel resonant circuit – PRC and series parallel circuit –SPRC). The design of the converter was done theoreticaly and tested by using simulation program. The simulation and partial tests served to build prototype the Interleaves Converter (ILLC). The function of the converter was tested in laboratory. The laboratory results have been compared with the theoretical and the simulation results.

Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1.7kV voltage range, power devices in SiC are foreseen to replace Si Insulatedgatebipolar transistors (IGBTs) for applications targeting high efficiency,high operation temperatures and/or volume reductions. In particular, theSiC Metal-oxide semiconductor field-effect transistor (MOSFET) – which isvoltage controlled and normally-OFF – is the device of choice due to the easeof its implementation in designs using Si IGBTs.In this work the reliability of SiC devices, in particular that of the SiCMOSFET, has been investigated. First, the possibility of paralleling two discreteSiC MOSFETs is investigated and validated through static and dynamictests. Parallel-connection was found to be unproblematic. Secondly, drifts ofthe threshold voltage and forward voltage of the body diode of the SiC MOSFETare investigated through long-term tests. Also these reliability aspectswere found to be unproblematic. Thirdly, the impact of the package on thechip reliability is discussed through a modeling of the parasitic inductancesof a standard module and the impact of those inductances on the gate oxide.The model shows imbalances in stray inductances and parasitic elementsthat are problematic for high-speed switching. A long-term test on the impactof humidity on junction terminations of SiC MOSFETs dies and SiCSchottky dies encapsulated in the same standard package reveals early degradationfor some modules situated outdoors. Then, the short-circuit behaviorof three different types (bipolar junction transistor, junction field-effect transistor,and MOSFET) of 1.2 kV SiC switching devices is investigated throughexperiments and simulations. The necessity to turn OFF the device quicklyduring a fault is supported with a detailed electro-thermal analysis for eachdevice. Design guidelines towards a rugged and fast short-circuit protectionare derived. For each device, a short-circuit protection driver was designed,built and validated experimentally. The possibility of designing diode-lessconverters with SiC MOSFETs is investigated with focus on surge currenttests through the body diode. The discovered fault mechanism is the triggeringof the npn parasitic bipolar transistor. Finally, a life-cycle cost analysis(LCCA) has been performed revealing that the introduction of SiC MOSFETsin already existing IGBT designs is economically interesting. In fact,the initial investment is saved later on due to a higher efficiency. Moreover,the reliability is improved, which is beneficial from a risk-management pointof-view. The total investment over 20 years is approximately 30 % lower fora converter with SiC MOSFETs although the initial converter cost is 30 %higher. / Kiselkarbid (SiC) är ett bredbandgapsmaterial (WBG) som har flera fördelar,såsom högre maximal elektrisk fältstyrka, lägre ON-state resitans, högreswitch-hastighet och högre maximalt tillåten arbetstemperatur jämförtmed kisel (Si). I spänningsområdet 1,2-1,7 kV förutses att effekthalvledarkomponenteri SiC kommer att ersätta Si Insulated-gate bipolar transistorer(IGBT:er) i tillämpningar där hög verkningsgrad, hög arbetstemperatur ellervolymreduktioner eftersträvas. Förstahandsvalet är en SiC Metal-oxidesemiconductor field-effect transistor (MOSFET) som är spänningsstyrd ochnormally-OFF, egenskaper som möjliggör enkel implementering i konstruktionersom använder Si IGBTer.I detta arbete undersöks tillförlitligheten av SiC komponenter, specielltSiC MOSFET:en. Först undersöks möjligheten att parallellkoppla tvådiskretaSiC MOSFET:ar genom statiska och dynamiska prov. Parallellkopplingbefanns vara oproblematisk. Sedan undersöks drift av tröskelspänning ochbody-diodens framspänning genom långtidsprov. Ocksådessa tillförlitlighetsaspekterbefanns vara oproblematiska. Därefter undersöks kapslingens inverkanpåchip:et genom modellering av parasitiska induktanser hos en standardmoduloch inverkan av dessa induktanser pågate-oxiden. Modellen påvisaren obalans mellan de parasitiska induktanserna, något som kan varaproblematiskt för snabb switchning. Ett långtidstest av inverkan från fuktpåkant-termineringar för SiC-MOSFET:ar och SiC-Schottky-dioder i sammastandardmodul avslöjar tidiga tecken pådegradering för vissa moduler somvarit utomhus. Därefter undersöks kortslutningsbeteende för tre typer (bipolärtransistor,junction-field-effect transistor och MOSFET) av 1.2 kV effekthalvledarswitchargenom experiment och simuleringar. Behovet att stänga avkomponenten snabbt stöds av detaljerade elektrotermiska simuleringar för allatre komponenter. Konstruktionsriktlinjer för ett robust och snabbt kortslutningsskyddtas fram. För var och en av komponenterna byggs en drivkrets medkortslutningsskydd som valideras experimentellt. Möjligheten att konstrueradiodlösa omvandlare med SiC MOSFET:ar undersöks med fokus påstötströmmargenom body-dioden. Den upptäckta felmekanismen är ett oönskat tillslagav den parasitiska npn-transistorn. Slutligen utförs en livscykelanalys(LCCA) som avslöjar att introduktionen av SiC MOSFET:ar i existerandeIGBT-konstruktioner är ekonomiskt intressant. Den initiala investeringensparas in senare pågrund av en högre verkningsgrad. Dessutom förbättrastillförlitligheten, vilket är fördelaktigt ur ett riskhanteringsperspektiv. Dentotala investeringen över 20 år är ungefär 30 % lägre för en omvandlare medSiC MOSFET:ar även om initialkostnaden är 30 % högre. / <p>QC 20170524</p>