Thesis (Ph. D.)--University of Hong Kong, 1987.

Thesis (M.S.)--Ohio University, August, 1988. / Title from PDF t.p.

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Silicon based materials, including silicon oxides and silicon oxynitrides, have found use in a number of areas in photonics including waveguides, antireflection and highly reflective coatings for laser facets, and detectors. For effective use of these materials in photonics it is necessary to characterize their optical properties as a function of their composition and structure. Since these characteristics are often dependent on the method used to deposit the films it is necessary to also determine the effect of deposition type and conditions on the film's properties. Recently, silicon based materials have been seen to display luminescence due to quantum confinement effects when nanocrystals are formed. This opens up the possibility of a silicon based emitter, something that has not had previous success due to the indirect bandgap of bulk silicon. The development of a silicon based emitter in turn would open up the possibility for monolithically integrated photonic circuits that could take advantage of CMOS processing technology. This thesis presents the results of research into the characterization of amorphous silicon and silicon oxide thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Optical properties of the films have been determined through the use of ellipsometry and correlated with the results from compositional analysis, done using Rutherford backscattering and elastic recoil detection, and bonding structure analysis, done using Fourier transform infrared spectroscopy. Nanocrystals were formed within the films by subjecting them to post-deposition thermal annealing, which induces a phase separation in silicon rich silicon oxide films. The effects of different annealing conditions on composition, structure and optical properties have also been analyzed. Finally, photoluminescence experiments were conducted on the films and correlated with the results from other characterization techniques. / Thesis / Master of Applied Science (MASc)

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by Kan Chi Fai. / Title also in Chinese characters. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1993. / Includes bibliographical references (leaves 120-124). / Acknowledgements / Abstract / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Proposed mechanisms of the visible photoluminescence of porous silicon --- p.5 / Chapter Chapter 3 --- Sample Preparation --- p.15 / Chapter 3.1 --- Anodization of porous silicon in an electrochemical cell --- p.15 / Chapter 3.2 --- Appearances of samples --- p.18 / Chapter 3.3 --- Uniformity of samples --- p.21 / Chapter 3.4 --- Formation mechanism --- p.22 / Chapter 3.5 --- Measurements of current-voltage characteristics --- p.23 / Chapter 3.6 --- Current-Voltage (I-V) Characteristics --- p.24 / Chapter 3.7 --- Voltage monitored at constant anodizing current --- p.37 / Chapter 3.8 --- Mass lost due to anodization --- p.37 / Chapter Chapter 4 --- Transmittance and reflectance studies --- p.42 / Chapter 4.1 --- Transmittance and reflectance studies in the ultraviolet to near infrared range --- p.42 / Chapter 4.1.1 --- Experimental setup of transmittance and reflectance spectroscopic studies --- p.42 / Chapter 4.1.2 --- Transmittance spectra --- p.42 / Chapter 4.1.3 --- Reflectance spectra --- p.48 / Chapter 4.1.4 --- Optical thickness of the porous silicon layer --- p.60 / Chapter 4.1.5 --- Effective medium approximation --- p.61 / Chapter 4.1.6 --- "Determination of refractive index, porosity and thickness" --- p.66 / Chapter 4.1.7 --- Thickness measured by optical microscopy --- p.67 / Chapter 4.1.8 --- Validity of the effective medium approximation --- p.72 / Chapter 4.2 --- Infrared transmission studies --- p.76 / Chapter 4.2.1 --- Experimental setup --- p.76 / Chapter 4.2.2 --- Infrared spectra --- p.75 / Chapter Chapter 5 --- Photoluminescence and Photoexcitation --- p.82 / Chapter 5.1 --- Photoluminescence studies --- p.82 / Chapter 5.1.1 --- Experimental setup --- p.82 / Chapter 5.1.2 --- Calibration of the spectral response of setup --- p.84 / Chapter 5.1.3 --- The photoluminescence and the appearance of porous silicon --- p.88 / Chapter 5.1.4 --- Effect of laser radiation on porous silicon --- p.95 / Chapter 5.1.5 --- Photochemistry --- p.95 / Chapter 5.1.6 --- Aging and photoluminescence --- p.97 / Chapter 5.1.7 --- Annealing studies of porous silicon --- p.97 / Chapter 5.1.8 --- Photoluminescence spectra --- p.100 / Chapter 5.1.9 --- Interference --- p.106 / Chapter 5.2 --- Photoexcitation studies --- p.107 / Chapter 5.2.1 --- Experimental setup --- p.107 / Chapter 5.2.2 --- Result --- p.108 / Chapter Chapter 6 --- Discussions and conclusions --- p.112 / Chapter 6.1 --- Information from peer groups --- p.112 / Chapter 6.1.1 --- Raman scattering --- p.112 / Chapter 6.1.2 --- X-ray diffraction --- p.112 / Chapter 6.2 --- Photoluminescence and annealing --- p.113 / Chapter 6.3 --- Photoluminescence and the etching conditions --- p.114 / Chapter 6.4 --- Consideration of different models in the visible photoluminescence of porous silicon --- p.117 / Chapter 6.5 --- Conclusions --- p.118 / References --- p.120

Thesis (M.S.)--Ohio State University, 1960. / Includes bibliographical references (leaves 81-82). Available online via OhioLINK's ETD Center.