Thesis (Ph. D.)--University of Missouri-Columbia, 1996. / Typescript. Vita. Includes bibliographical references (leaves 128-135). Also available on the Internet.

Thesis (Ph. D.)--University of Missouri-Columbia, 1996. / Typescript. Vita. Includes bibliographical references (leaves 128-135). Also available on the Internet.

A novel fiber optic structure, termed stochastic ordered hole fibers, has been developed that contains an ordered array of six hollow tubes surrounding a hollow core, combined with a nanoporous glass creating a unique fully three dimensional pore/fiber configuration. The objective of this study is to increase the functionality of these stochastic ordered hole fibers, as well as porous clad fibers, by integrating electronic device components such as conductors, and semiconductors, and optically active materials on and in the optical fiber pore structures. Conductive copper pathways were created on/in the solid core fibers using an electroless deposition technique. A chemical vapor deposition system was built in order to attempt the deposition of silicon in on the porous clad fibers. Additionally, conductive poly(3,4-ethylenedioxythiophene)- poly(styrene sulfonate) (PEDOT:PSS) and photoactive polymer blend poly(3- hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-)6,6)C61 (P3HT: PCBM) were deposited on the fibers using dip coating techniques. Quantum dots of Cadmium Selenide (CdSe) with particle sizes of ranging from 2- 10 nm were deposited in the stochastic ordered hole fibers. SEM and EDS analysis confirm that copper, polymer materials, and quantum dots were deposited in the pore structure and on the surface of the fibers. Finally, resistance measurements indicate that the electrolessly deposited copper coatings have sufficient conductivity to be used as metallic contacts or resistive heating elements. / Master of Science

The doctoral thesis deals with the structure and properties of the polycrystalline silicon layers deposited on the silicon wafers backside. The wafers are further used for production of semiconductor devices. This work is focused on detailed description of the layers structure and study of the gettering properties and residual stress of the layers. The main goal of this work is to develop two novel technologies. The first one leads to improvement of the temperature stability of the gettering properties of the layers, and the second one solves the deposition of the layers with pre-determined residual stress. This doctoral thesis was created with the support of the company ON Semiconductor Czech Republic, Rožnov pod Radhoštěm.