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Modeling and characterization of high-temperature silicon-based thermal sensorsWu, Zhaohui, January 2005 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2005. / Title proper from title frame. Also available in printed format.
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Thermally compensated silicon negative resistance pin diodesAfanasjevs, Juris, January 1969 (has links)
Thesis (Ph. D.)--University of Wisconsin--Madison, 1969. / Typescript. Vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.
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Modeling of silicon diodes.Tsao, Jenn. January 1988 (has links)
A relatively simple, yet complete analytical model for predicting the performance of illuminated or unilluminated (dark) pn diodes with arbitrary doping profiles is developed and presented in this dissertation. It can be used to calculate the saturation current, minority carrier density, short circuit current, spectral response, and effective low-high (p-p⁺) junction recombination velocities of such diodes. The model is applied to dark or illuminated n⁺-p-p⁺ diodes as a function of the front and back surface recombination velocities and the bulk doping profiles. The analysis includes heavy doping effects. The results predicted by this model are compared with those predicted by numerical simulation programs. Both results agree well with each other and with the experimental data available. The complete analytical expressions produced by the model can be reduced to simpler forms for the transparent and quasi-transparent cases. These forms agree with the special case expressions developed by others. The new model is a substantial contribution leading to improved understanding of such devices.
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FABRICATION AND TESTING OF A SENSITIVE ULTRAVIOLET-VISIBLE SILICON PHOTODIODE DEVICEMartínez Montes, José de la Luz January 1979 (has links)
No description available.
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Modeling and characterization of high-temperature silicon-based thermal sensorsWu, Zhaohui, 吳朝暉 January 2005 (has links)
published_or_final_version / abstract / toc / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
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Si-based quantum functional tunneling devices and their applications to logic and other future circuit topologiesJin, Niu, January 2004 (has links)
Thesis (Ph. D.)--Ohio State University, 2004. / Title from first page of PDF file. Document formatted into pages; contains xxv, 201 p.; also includes graphics Includes bibliographical references (p. 188-201). Available online via OhioLINK's ETD Center
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Silicon microring and microdisk-based active devices using integrated p-i-n diodes /Zhou, Linjie. January 2007 (has links)
Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references (leaves 129-147). Also available in electronic version.
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Application of the photodiode in design and implementation of a 2-D position detector /Cha, Jae H. January 1994 (has links)
Report (M.S.)--Virginia Polytechnic Institute and State University, 1994. / Includes bibliographical references (leaves 32-34). Also available via the Internet.
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The effect of surface recombination velocity on the high level injection current - voltage characteristics of wide based silicon p-i-n diodes /Strong, Alvin Wayne January 1976 (has links)
No description available.
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Development of a new silicon based detector module for PETHooper, Peter R. January 2003 (has links)
Thesis (M.Sc.(HONS))--University of Wollongong, 2003. / Typescript. Bibliographical references: leaf 83-89.
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