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Semiconductor nanotechnology is today a very well studied subject, and demonstrations of possible applications and concepts are abundant. However, well-controlled mass-fabrication on the nanoscale is still a great challenge, and the lack of nanofabrication methods that provide the combination of required fabrication precision and high throughput, limits the large-scale use of nanodevices. This work aims in resolving some of the issues related to nanostructure fabrication, and deals with development of nanofabrication processes, the use of size-reduction for reaching true nanoscale dimensions (20 nm or below), and finally the optical and electrical characterization to understand the physics of the more successful structures and devices in this work. Due to its widespread use in microelectronics, silicon was the material of choice throughout this work. Initially, a fabrication process based on electron beam lithography (EBL) was designed, allowing controlled fabrication of devices of dimensions down to 30 nm, although, generally, initial device dimensions were above 70 nm, allowing the flexible but low-throughput EBL, to be replaced by state-of-the-art optical lithography in the case of industrialization of the process. A few main processes were developed throughout the course of this work, which were capable of defining silicon nanopillar and nano-wall arrays from bulk silicon, and silicon nanowire devices from silicon-on-insulator (SOI) material. Secondly, size-reduction, as a means of providing access to few-nanometer dimensions not available by current lithography techniques was investigated. An additional goal of the size-reduction studies was to find self-limiting mechanisms in the process, that would limit the impact of variations in the size and other imperfections of the initial structures. Thermal oxidation was investigated mainly for self-limited size-reduction of silicon nanopillars, resulting in well-defined quantum dot arrays of few-nm dimensions. Electrochemical etching was employed to size-reduce both silicon nanopillars and silicon nanowires down into the 10-nm regime. This being a novel application, a more thorough study of electrochemical etching of low-dimensional and thin-layer structures was performed as well as development of a micro-electrochemical cell, enabling electrochemical etching of fabricated nanowire devices with improved control. Finally, the combination of nanofabrication and size-reduction resulted in two successful device structures: Sparse and spatially well-controlled single silicon quantum dot arrays, and electrically connected size-reduced silicon nanowires. The quantum dot arrays were investigated through photoluminescence spectroscopy demonstrating for the first time atomic-like photoemission from single silicon quantum dots. The silicon nanowire devices were electrically characterized. The current transport through the device was determined to be through inversion layer electrons with surface states of the nanowire surfaces greatly affecting the conductance of the nanowire. A model was also proposed, capable of relating physical and electrical properties of the nanowires, as well as demonstrating the considerable influence of charged surface states on the nanowire conductance. / QC 20101101

Semiconductor nanostructures exhibit many remarkable electronic and optical properties. The key to designing and utilising semiconductor quantum structures is a physical understanding of the detailed excitation, transport and energy relaxation processes. Thus the nonequilibrium dynamics of semiconductor quantum structures have attracted extensive attention in recent years. Ultrafast spectroscopy has proven to be a versatile and powerful tool for investigating transient phenomena related to the relaxation and transport dynamics in semiconductors. In this thesis, we report investigations into the electronic and optical properties of various semiconductor quantum systems using a variety of ultrafast techniques, including up-conversion photoluminescence, pump-probe, photon echoes and four-wave mixing. The semiconductor quantum systems studied include ZnO/ZnMgO multiple quantum wells with oxygen ion implantation, InGaAs/GaAs self-assembled quantum dots with different doping, InGaAs/InP quantum wells with proton implantation, and silicon quantum dots. The spectra of these semiconductor nanostructures range from the ultraviolet region, through the visible, to the infrared. In the UV region we investigate excitons, biexcitons and oxygen implantation effects in ZnO/ZnMgO multi-quantum wells using four-wave mixing, pump-probe and photoluminescence techniques. Using time-resolved up-conversion photoluminescence, we investigate the relaxation dynamics and state filling effect in InGaAs self-assembled quantum dots with different doping, and the implantation effect in InGaAs/InP quantum wells. Finally, we study the optical properties of silicon quantum dots using time-resolved photoluminescence and photon echo spectroscopy on various time scales, ranging from microseconds to femtoseconds.