For the fabrication of semiconductor devices, solar cells, and infrared detectors, thin film deposition methods are required. Of the deposition methods currently available including MBE, LPE, and MOCVD; MOCVD is preferred due to its relatively low cost per wafer, versatility, and high wafer throughput. Requirements which must be considered in the design of a deposition system are discussed. An MOCVD system is designed such that MOCVD can be carried out by plasma enhanced deposition (PED) or low pressure metal-organic chemical vapor deposition (LPMOCVD). As a result of the inherent characteristics of the two methods, a wide range of operational temperatures and pressures are possible. Software is developed for system control including a graphical display of the process schematic. The deposition of GaAS on Si is given as one possible application for this type system.