This study is using selenization of stacked elemental layers to form Cu(In,Ga)Se2(CIGS). In the process, use Cu/Sb/In/Ga/Se precursor to heat to 550 oC at Se vapor in vacuum chamber. From the result of XRD¡BRaman and EPMA, that show of the precursor do not form to CIGS. After that, The result of using different layers precursor to form CIGS show that only Cu/In/GaSe/Se reach to form CIGS, but it still has second phase. According to the literature¡Athe reason for the formation of CIGS selenide process due to interdiffusion caused the formation of ternary solid phase, the solid phase diffusion reaction could be hampered.And then change to use rapid thermal selenization to form CIGS with two step of heating (hold at 300 oC and 650 oC) at N2 atmosphere. The laminated follow the best results in the selenide process Cu/In/GaSe/Se precursors in Se atmosphere, the (112) preferred orientation is 26.8o-26.9o in the XRD results of the fixed process conditions. EPMA composition analysis and comparison of Ga actual amount will increase with the estimated value of the amount of increase(Estimated value 4atom% actual value 2atom%¡FEstimated value 9.2tom% actual value 10atom%¡AGa/¢»=0.32), but the composition has yet to amend. Then will join Sb on CIGS observed from the SEM results Sb does improve the CIGS thin film flatness as well as to help grain growth in rapid thermal selenization, grain size of about 1 to 3£gm.