<p>I 0.18 µm CMOS process har ett standardcells bibliotek med låg effektförbrukning implementerats. Cellerna har konstruerats och simulerats i Cadence och ett layoutprogram. Vid simulering av heladderare och D-vippor har effektförbrukningen och tider mätts upp och jämförts med varandra. Matningsspänningen varierade mellan 1 V och 1.8 V. In 0.18 µm CMOS process has a standard cell library with low power consumption been implemented. The cells have been made and simulated in Cadence and a layout program. At the simulation of the full adders and the D flip flops the power consumption and time have been estimated and compared. The power supply voltage varied between 1 V and 1.8 V.</p> / <p>A standard cell library with low power consumption has been implemented in a 0.18 mm CMOS process. The cells have been designed and simulated in Cadence and a layout program. During the simulation of the full adders and the D flip flops the power consumption and time have been estimated and compared. The power supply voltage varied between 1 V and 1.8 V.</p>

I 0.18 µm CMOS process har ett standardcells bibliotek med låg effektförbrukning implementerats. Cellerna har konstruerats och simulerats i Cadence och ett layoutprogram. Vid simulering av heladderare och D-vippor har effektförbrukningen och tider mätts upp och jämförts med varandra. Matningsspänningen varierade mellan 1 V och 1.8 V. In 0.18 µm CMOS process has a standard cell library with low power consumption been implemented. The cells have been made and simulated in Cadence and a layout program. At the simulation of the full adders and the D flip flops the power consumption and time have been estimated and compared. The power supply voltage varied between 1 V and 1.8 V. / A standard cell library with low power consumption has been implemented in a 0.18 mm CMOS process. The cells have been designed and simulated in Cadence and a layout program. During the simulation of the full adders and the D flip flops the power consumption and time have been estimated and compared. The power supply voltage varied between 1 V and 1.8 V.

abstract: Characterization of standard cells is one of the crucial steps in the IC design. Scaling of CMOS technology has lead to timing un-certainties such as that of cross coupling noise due to interconnect parasitic, skew variation due to voltage jitter and proximity effect of multiple inputs switching (MIS). Due to increased operating frequency and process variation, the probability of MIS occurrence and setup / hold failure within a clock cycle is high. The delay variation due to temporal proximity of MIS is significant for multiple input gates in the standard cell library. The shortest paths are affected by MIS due to the lack of averaging effect. Thus, sensitive designs such as that of SRAM row and column decoder circuits have high probability for MIS impact. The traditional static timing analysis (STA) assumes single input switching (SIS) scenario which is not adequate enough to capture gate delay accurately, as the delay variation due to temporal proximity of the MIS is ~15%-45%. Whereas, considering all possible scenarios of MIS for characterization is computationally intensive with huge data volume. Various modeling techniques are developed for the characterization of MIS effect. Some techniques require coefficient extraction through multiple spice simulation, and do not discuss speed up approach or apply models with complicated algorithms to account for MIS effect. The STA flow accounts for process variation through uncertainty parameter to improve product yield. Some of the MIS delay variability models account for MIS variation through table look up approach, resulting in huge data volume or do not consider propagation of RAT in the design flow. Thus, there is a need for a methodology to model MIS effect with less computational resource, and integration of such effect into design flow without trading off the accuracy. A finite-point based analytical model for MIS effect is proposed for multiple input logic gates and similar approach is extended for setup/hold characterization of sequential elements. Integration of MIS variation into design flow is explored. The proposed methodology is validated using benchmark circuits at 45nm technology node under process variation. Experimental results show significant reduction in runtime and data volume with ~10% error compared to that of SPICE simulation. / Dissertation/Thesis / Ph.D. Electrical Engineering 2012