Excessive energy dissipation in CMOS devices during switching is the primary threat to continued downscaling of computing devices in accordance with Moore’s law. In the quest for alternatives to traditional transistor based electronics, nanomagnet-based computing [1, 2] is emerging as an attractive alternative since: (i) nanomagnets are intrinsically more energy-efficient than transistors due to the correlated switching of spins [3], and (ii) unlike transistors, magnets have no leakage and hence have no standby power dissipation. However, large energy dissipation in the clocking circuit appears to be a barrier to the realization of ultra low power logic devices with such nanomagnets. To alleviate this issue, we propose the use of a hybrid spintronics-straintronics or straintronic nanomagnetic logic (SML) paradigm. This uses a piezoelectric layer elastically coupled to an elliptically shaped magnetostrictive nanomagnetic layer for both logic [4-6] and memory [7-8] and other information processing [9-10] applications that could potentially be 2-3 orders of magnitude more energy efficient than current CMOS based devices. This dissertation focuses on studying the feasibility, performance and reliability of such nanomagnetic logic circuits by simulating the nanoscale magnetization dynamics of dipole coupled nanomagnets clocked by stress. Specifically, the topics addressed are: 1. Theoretical study of multiferroic nanomagnetic arrays laid out in specific geometric patterns to implement a “logic wire” for unidirectional information propagation and a universal logic gate [4-6]. 2. Monte Carlo simulations of the magnetization trajectories in a simple system of dipole coupled nanomagnets and NAND gate described by the Landau-Lifshitz-Gilbert (LLG) equations simulated in the presence of random thermal noise to understand the dynamics switching error [11, 12] in such devices. 3. Arriving at a lower bound for energy dissipation as a function of switching error [13] for a practical nanomagnetic logic scheme. 4. Clocking of nanomagnetic logic with surface acoustic waves (SAW) to drastically decrease the lithographic burden needed to contact each multiferroic nanomagnet while maintaining pipelined information processing. 5. Nanomagnets with four (or higher states) implemented with shape engineering. Two types of magnet that encode four states: (i) diamond, and (ii) concave nanomagnets are studied for coherence of the switching process.

The primary obstacle to continued downscaling of charge-based electronic devices in accordance with Moore's law is the excessive energy dissipation that takes place in the device during switching of bits. Unlike charge-based devices, spin-based devices are switched by flipping spins without moving charge in space. Although some energy is still dissipated in flipping spins, it can be considerably less than the energy associated with current flow in charge-based devices. Unfortunately, this advantage will be squandered if the method adopted to switch the spin is so energy-inefficient that the energy dissipated in the switching circuit far exceeds the energy dissipated inside the system. Regrettably, this is often the case, e.g., switching spins with a magnetic field or with spin-transfer-torque mechanism. In this dissertation, it is shown theoretically that the magnetization of two-phase multiferroic single-domain nanomagnets can be switched very energy-efficiently, more so than any device currently extant, leading possibly to new magnetic logic and memory systems which might be an important contributor to Beyond-Moore's-Law technology. A multiferroic composite structure consists of a layer of piezoelectric material in intimate contact with a magnetostrictive layer. When a tiny voltage of few millivolts is applied across the structure, it generates strain in the piezoelectric layer and the strain is transferred to the magnetostrictive nanomagnet. This strain generates magnetostrictive anisotropy in the nanomagnet and thus rotates its direction of magnetization, resulting in magnetization reversal or 'bit-flip'. It is shown after detailed analysis that full 180 degree switching of magnetization can occur in the "symmetric" potential landscape of the magnetostrictive nanomagnet, even in the presence of room-temperature thermal fluctuations, which differs from the general perception on binary switching. With proper choice of materials, the energy dissipated in the bit-flip can be made as low as one attoJoule at room-temperature. Also, sub-nanosecond switching delay can be achieved so that the device is adequately fast for general-purpose computing. The above idea, explored in this dissertation, has the potential to produce an extremely low-power, yet high-density and high-speed, non-volatile magnetic logic and memory system. Such processors would be well suited for embedded applications, e.g., implantable medical devices that could run on energy harvested from the patient's body motion.

Dans cette thèse, les interactions magnétoélectriques et optomagnétiques transmises par les contraintes dans les structures ferroélectriques/ferromagnétiques sont étudiées. Nous montrons que la dynamique des déformations du Pb(ZrxTi1-x)O3 aboutit à la manipulation électrique sous-coercitive de multi-états ferroélastiques rémanents. La mesure par une jauge résistive de ces états, ainsi que l'écriture et l'effacement électriques et le stockage ferroélastique, sont démontrés. La configuration des contraintes de matériaux ferroélectriques créée électriquement, permet de modifier l'anisotropie magnétique d'une couche ferromagnétique. Ce phénomène est utilisé pour contrôler le champ magnétique coercitif des composants magnétostrictifs des vannes de spin au moyen des déformations. L’irradiation lumineuse est également utilisée pour entraîner une photostriction rémanente dans le BiFeO3. Cette déformation rémanente est transférée à une couche ferromagnétique et permet un contrôle optique de la coercivité magnétique. Nous montrons comment les états magnétiques peuvent être écrits au moyen de la lumière et effacés par un champ électrique. / In this thesis, the strain-mediated magnetoelectric and optomagnetic interactions in ferroelectric/ferromagnetic structures are studied. The strain dynamics in Pb(ZrxTi1-x)O3 is shown to result in the sub-coercive electrical manipulation of its remanent ferroelastic multi-states. The resistive readout of these states provided by the strain gauge layers, together with the electrically-triggered ferroelastic writing, storage, and erasing, are demonstrated. These strain configurations created by electric fields in ferroelectrics can effectively impact the magnetic anisotropy of a ferromagnetic adlayer. This phenomenon is shown to control the magnetic coercive field of the magnetostrictive components of spin valves via the strain. Light irradiation is shown to result in remanent photostriction effect (photo-driven deformation) in BiFeO3. Such optically-induced remanent deformations can be transferred to a ferromagnetic adlayer and result in the optical control of the magnetic coercive force. It is shown here how magnetic states can be written by light and erased by an electric field.

Research in future generation computing is focused on reducing energy dissipation while maintaining the switching speed in a binary operation to continue the current trend of increasing transistor-density according to Moore’s law. Unlike charge-based CMOS technology, spin-based nanomagnetic technology, based on switching bistable magnetization of single domain shape-anisotropic nanomagnets, has the potential to achieve ultralow energy dissipation due to the fact that no charge motion is directly involved in switching. However, switching of magnetization has not been any less dissipative than switching transistors because most magnet switching schemes involve generating a current to produce a magnetic field, or spin transfer torque or domain wall motion to switch magnetization. Current-induced switching invariably dissipates an exorbitant amount of energy in the switching circuit that nullifies any energy advantage that a magnet may have over a transistor. Magnetoelastic switching (switching the magnetization of a magnetostrictive magnet with voltage generated stress) is an unusual switching paradigm where the dissipation turns out to be merely few hundred kT per switching event – several orders of magnitude less than that encountered in current-based switching. A fundamental obstacle, though, is to deterministically switch the magnetization of a nanomagnet between two stable states that are mutually anti-parallel with stress alone. In this work, I have investigated ways to mitigate this problem. One popular approach to flip the magnetizations of a nanomagnet is to pass a spin polarized current through it that transfers spin angular moment from the current to the electrons in the magnet, thereby switching their spins and ultimately the magnet’s magnetization. This approach – known as spin transfer torque (STT) – is very dissipative because of the enormous current densities needed to switch magnets, We, therefore, devised a mixed mode technique to switch magnetization with a combination of STT and stress to gain both energy efficiency from stress and deterministic 180o switching from STT. This approach reduces the total energy dissipation by roughly one order of magnitude. We then extended this idea to find a way to deterministically flip magnetization with stress alone. Sequentially applying stresses along two skewed axes, a complete 180o switching can be achieved. These results have been verified with stochastic Landau-Lifshitz-Gilbert simulation in the presence of thermal noise. The 180o switching makes it possible to develop a genre of magneto-elastic memory where bits are written entirely with voltage generated stress with no current flow. They are extremely energy-efficient. In addition to memory devices, a universal NAND logic device has been proposed which satisfies all the essential characteristics of a Boolean logic gate. It is non-volatile unlike transistor based logic gates in the sense that that gate can process binary inputs and store the output (result) in the magnetization states of magnets, thereby doubling as both logic and memory. Such dual role elements can spawn non-traditional non-von-Neumann architectures without the processor and memory partition that reduces energy efficiency and introduces additional errors. A bit comparator is also designed, which happens to be all straintronic, yet reconfigurable. Moreover, a straintronic spin neuron is designed for neural computing architecture that dissipates orders of magnitude less energy than its CMOS based counterparts. Finally, an experiment has been performed to demonstrate a complete 180o switching of magnetization in a shape anisotropic magnetostrictive Co nanomagnet using voltage generated stress. The device is synthesized with nano-fabrication techniques namely electron beam lithography, electron beam evaporation, and lift off. The experimental results vindicate our proposal of applying sequential stress along two skewed axes to reverse magnetization with stress and therefore, provide a firm footing to magneto-elastic memory technology.

Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation to non-Boolean computing, both of which have been studied in this work. Detailed studies of the effects of nanomagnet material fabrication defects and surface roughness variation (found in real nanomagnets) on the switching process and ultimately device performance of those switches have been performed theoretically. The results of these studies place the viability of straintronics logic (Boolean) and/or memory in question. With a view to analog computing and signal processing, analog spin wave based device operation has been evaluated in the presence of defects and it was found that defects impact their performance, which can be a major concern for the spin wave based device community. Additionally, the design challenge for low barrier nanomagnet which is the building block of binary stochastic neurons based probabilistic computing device in case of real nanomagnets has also been investigated. This study also cast some doubt on the efficacy of probabilistic computing devices. Fortunately, there are some non-Boolean applications based on the collective action of array of nanomagnets which are very forgiving of material defects. One example is image processing using dipole coupled nanomagnets which is studied here and it showed promising result for noise correction and edge enhancement of corrupted pixels in an image. Moreover, a single magneto tunnel junction based microwave oscillator was proposed for the first time and theoretical simulations showed that it is capable of better performance compared to traditional microwave oscillators. The experimental part of this work dealt with spin wave modes excited by surface acoustic waves, studied with time resolved magneto optic Kerr effect (TR-MOKE). New hybrid spin wave modes were observed for the first time. An experiment was carried out to emulate simulated annealing in a system of dipole coupled magnetostrictive nanomagnets where strain served as the simulated annealing agent. This was a promising outcome and it is the first demonstration of the hardware variant of simulated annealing of a many body system based on magnetostrictive nanomagnets. Finally, a giant spin Hall effect actuated surface acoustic wave antenna was demonstrated experimentally. This is the first observation of photon to phonon conversion using spin-orbit torque and although the observed conversion efficiency was poor (1%), it opened the pathway for a new acoustic radiator. These studies complement past work done in the area of straintronics.

Nanomagnetic logic, incorporating logic bits in the magnetization orientations of single-domain nanomagnets, has garnered attention as an alternative to transistor-based logic due to its non-volatility and unprecedented energy-efficiency. The energy efficiency of this scheme is determined by the method used to flip the magnetization orientations of the nanomagnets in response to one or more inputs and produce the desired output. Unfortunately, the large dissipative losses that occur when nanomagnets are switched with a magnetic field or spin-transfer-torque inhibit the promised energy-efficiency. Another technique offering superior energy efficiency, “straintronics”, involves the application of a voltage to a piezoelectric layer to generate a strain which is transferred to an elastically coupled magnetrostrictive layer, causing magnetization rotation. The functionality of this scheme can be enhanced further by introducing magnetocrystalline anisotropy in the magnetostrictive layer, thereby generating four stable magnetization states (instead of the two stable directions produced by shape anisotropy in ellipsoidal nanomagnets). Numerical simulations were performed to implement a low-power universal logic gate (NOR) using such 4-state magnetostrictive/piezoelectric nanomagnets (Ni/PZT) by clocking the piezoelectric layer with a small electrostatic potential (~0.2 V) to switch the magnetization of the magnetic layer. Unidirectional and reliable logic propagation in this system was also demonstrated theoretically. Besides doubling the logic density (4-state versus 2-state) for logic applications, these four-state nanomagnets can be exploited for higher order applications such as image reconstruction and recognition in the presence of noise, associative memory and neuromorphic computing. Experimental work in strain-based switching has been limited to magnets that are multi-domain or magnets where strain moves domain walls. In this work, we also demonstrate strain-based switching in 2-state single-domain ellipsoidal magnetostrictive nanomagnets of lateral dimensions ~200 nm fabricated on a piezoelectric substrate (PMN-PT) and studied using Magnetic Force Microscopy (MFM). A nanomagnetic Boolean NOT gate and unidirectional bit information propagation through a finite chain of dipole-coupled nanomagnets are also shown through strain-based "clocking". This is the first experimental demonstration of strain-based switching in nanomagnets and clocking of nanomagnetic logic (Boolean NOT gate), as well as logic propagation in an array of nanomagnets.