No description available.

Two aspects of gold mineralisation in the Caledonides of the British Isles have been investigated: gold-telluride mineralisation at Clogau Mine, North Wales; and placer gold mineralisation in the Southern Uplands, Scotland. The primary ore assemblage at Clogau Mine is pyrite, arsenopyrite, cobaltite, pyrrhotine, chalcopyrite, galena, tellurbismuth, tetradymite, altaite, hessite, native gold, wehrlite, hedleyite, native bismuth, bismuthunite and various sulphosalts. The generalised paragenesis is early Fe, Co, Cu, As and S species, and later minerals of Pb, Bi, Ag, Au, Te, Sb. Electron probe micro-analysis (EPMA) of complex telluride-sulphide intergrowths suggests that these intergrowths formed by co-crystallisation/replacement processes and not exsolution. Minor element chemical variation, in the sulphides and tellurides, indicates that antimony and cadmium are preferentially partitioned into telluride minerals. Mineral stability diagrams suggest that during gold deposition log bf aTe2 was between -7.9 and -9.7 and log bf aS2 between -12.4 and -13.8. Co-existing mineral assemblages indicate that the final stages of telluride mineralisation were between c. 250 - 275oC. It is suggested that the high-grade telluride ore shoot was the result of remobilisation of Au, Bi, Ag and Te from low grade mineralisation elsewhere within the vein system, and that gold deposition was brought about by destabilisation of gold chloride complexes by interaction with graphite, sulphides and tellurbismuth. Scanning electron microscopy of planer gold grains from the Southern Uplands, Scotland, indicates that detailed studies on the morphology of placer gold can be used to elucidate the history of gold in the placer environment. In total 18 different morphological characteristics were identified. These were divided on an empirical basis, using the relative degree of mechanical attrition, into proximal and distal characteristics. One morphological characteristic (a porous/spongy surface at high magnification) is considered to be chemical in origin and represent the growth of `new' gold in the placer environment. The geographical distribution of morphological characteristics has been examined and suggests that proximal placer gold is spatially associated with the Loch Doon, Cairsphairn and Fleet granitoids. Quantitative EPMA of the placer gold reveals two compositional populations of placer gold. Examination of the geographical distribution of fineness suggests a loose spatial association between granitoids and low fineness placer gold. Also identified was chemically heterogeneous placer gold. EPMA studies of these heterogeneities allowed estimation of annealing history limits, which suggest that the heterogeneities formed between 150 and 235oC. It is concluded, on the basis of relationships between morphology and composition, that there are two types of placer gold in the Southern Uplands: (i) placer gold which is directly inherited from a hypogene source probably spatially associated with granitoids; and (ii) placer gold that has formed during supergene processes.

This work is concerned with the characterisation of epitaxial (Hg,Mn)Te, and in particular the assessment of the structural and transport properties of the layers. Direct alloy growth (DAG) of (Hg,Mn)Te on buffered GaAs and unbuffered (Cd,Zn)Te substrates in a horizontal MOVPE reactor resulted in poor surface compositional and thickness uniformity. This was attributed to the differences in the pyrolysis rates of the Te and Mn precursors. Double crystal x-ray diffraction was used to determine accurately layer thickness, composition and quality. Analysis of the symmetric and asymmetric rocking curves revealed that for thickness over lµm (Hg,Mn)Te was almost 100% relaxed. A reduction in the dislocation density, as inferred from the x-ray rocking curve width, was observed with increasing layer thickness and was considered in terms of the Gay model. A sub-grain structure was seen using double crystal x-ray topography, where grain diameter decreased in a linear manner with inverse layer thickness. Triple axis x- ray diffraction revealed that tilts between the sub-grains were the primary cause of the rocking curve broadening. Hall and resistivity measurements were made in the temperature range 4K to 290K. The majority of the layers exhibited n-type behaviour, with carrier concentrations and mobilities dependent on layer thickness. Modelling of the temperature dependence of the carrier mobility was attempted for various lattice and impurity scattering mechanisms. Attempts were also made to explain the temperature dependence of the carrier concentration using a two band model and estimates for the bandgaps obtained from intrinsic Hall data. The interdiffused multilayer process (IMP) was then employed, resulting in layers with superior lateral compositional and thickness uniformities. Improved crystalline quality to that seen in comparable DAG layers was also obtained. The electron mobilities were higher in IMP lasers than incomparable DAG ones and analysis of the mobility data indicated that several scattering mechanisms were operative, including ionised and neutral impurity, optical phonon and piezoelectric (in Mn rich layers) scattering. Layers grown by IMP appeared to be more stable and changes in transport properties over a period of a few months were less pronounced than for comparable DAG layers.

Thesis (Ph. D.)--Oregon Graduate Center, 1989.

Universiẗat, Diss., 2002--Regensburg.

¡@¡@¡@¡@¡@¡@¡@¡@¡@¡@¡@¡@¡@Abstract This paper presents an integrated batch-produced (Bi, Sb)2Te3 micro thermoelectric cooler(£g-TEC) fabricated by electrochemical MEMS technology. To optimize the thermal conductivity of (Bi, Sb)2Te3 thin layers, a cathode with tunable rotary speed has been designed in the electroplating system to well control the thin film deposition rate and uniformity.The column-type micro thermoelectric thin films fabricated using electrochemical-deposited and patterned using photolithography processes. The thermoelectric thin films made of N-type Bi2Te3 and P-type Sb2Te3 with an average thickness of 5£gm, are connected using Cr/Au layers at the hot junctions and cold junctions. The measured Seebeck coefficient and electrical resistivity of the thermoelectric thin films,are -52£gV/K and 2.52¡Ñ10-5£[m(N-type, power factor of 0.11mW/K2m),and 71£gV/K and 1.91¡Ñ10-5£[m( P-type, power factor of 0.26mW/K2m) after annealing at 250¢J.Under the circumstances that voltage of 2-5 volts is driven, the upper and lower levels electrode shows tentatively that there is 0.7¢Jof difference in temperature.

Thesis (MTech (Chemistry))--Cape Peninsula University of Technology, 2016. / The synthesis of water soluble CdTe, CdTe/CdSe and CdTe/CdSe/ZnSe nanoparticles (NPs) and their optical, cytotoxicity as well as imaging properties are presented. The synthesis was carried out under ambient conditions in the absence of an inert environment and involved the use of potassium tellurite (K2TeO3) and sodium selenosulphate (Na2SeSO4) as a stable tellurium and selenium precursor respectively, while mercaptopropanoic acid (MPA) was used as capping agents. In this method, the CdTe NPs were prepared by the addition of tellurium source solution to MPA-cadmium complex solution at different pH while keeping other parameters constant. The formation of the shell (CdSe) and multi shell (CdSe/ZnSe) were achieved by adding desired precursors to the growing CdTe core NPs at one hour interval. The temporal evolution of the optical properties and stability of the growing nanocrystals was monitored in detail by varying the refluxing time, pH and storing the NPs under ambient condition for several days. The as-prepared NPs were characterised using UV-Vis absorption and photoluminescence (PL) spectroscopy, transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The formation of the shells was indicated by an immediate change in the colour of the reaction solutions after the addition of the desired precursor and the shift in the absorption wavelength towards red-region. The optical analyses showed an enhancement in the fluorescent intensity after the addition of the shell solution accompanied by red-shifting of the absorption and emission maximum. The stability study revealed an increase in the emission intensity as the ageing days increased. The stability study of the NPs in air at room temperature show highly improved stability of the core-shell NPs than the core. The TEM analysis showed that the materials are small, monodispersed, spherical and highly crystalline. The cytotoxicity of the NPs was investigated on LM 8 and KM-Luc/ GFP cell line using an MTT protocol at different concentrations. The cell viability show significant improvement after the shell formation with CdTe/CdSe/ZnSe core multi shell NPs having the highest cell viability at higher concentration (60 μg/mL). Furthermore a decrease in cytotoxicity is revealed with increase in reaction time, thus NPs prepared at longer (7 h) reaction time showed lower cytotoxicity compared with those prepared at shorter (0.5 h) reaction time. The confocal laser microscope image of the cells after the addition of the as-synthesised NPs confirmed the transfection of the NPs by KM-Luc/GFP cell line, indicating that the NPs have been endocytosis. This study demonstrates the great potential of the as-synthesised core-multi shell nanoparticles for biological and any applications that require efficiency, high fluorescence intensity and stability.

This work presents a study of the character and distribution of structural defects in (00l)CdTe buffer layers grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE). These are of importance as hybrid substrates for the growth of Cd(_x)Hg(1-x)Te (CMT), a prominent infrared detector material. The 14.5% mismatch between CdTe and GaAs leads to a high-density of dislocations at the CdTe/GaAs interface, and threading through the layer. The presence of linear and planar defects is detrimental to the performance of CMT devices and it is desirable to reduce the density of dislocations to below l0(^5)cm(^-2). Results of high resolution X-ray diffraction (HRXRD) studies on a series of MOVPE grown CdTe/GaAs epilayers of different thickness and on a single thick layer which was repeatedly etched and remeasured are reported. Threading dislocation density was estimated from HRXRD full width at half maximum (FWHM) using a relationship proposed by Gay, Hirsch and Kelly and was found to decrease rapidly in the initial stages of layer growth. An optimum buffer layer thickness of 8µm is proposed for the subsequent growth of CMT. Rocking curves were recorded from a single thick CdTe/GaAs epilayer for wavelengths in the range 0.69-1.95A at the Daresbury SRS, and this data is extrapolated to infinite absorption to obtain an estimate of the rocking curve width representative of the surface of a thick layer. A number of models which attempt to describe the reduction in threading dislocation density with increasing thickness are reviewed and a new model based on the coalescence of like dislocations is developed. The models are compared to published data for layers with misfit in the range 0.23-14.6%. The models previously developed by Tachikawa and Yamaguchi and by Durose and Tatsuoka are shown to be the more appropriate for describing the dislocation density distribution in highly mismatched layers. Results of the transmission electron microscopy of CdTe/GaAs epilayers, both in plan view and cross-section, showing the character of dislocations threading through thick CdTe buffer layers are presented. Many dipoles composed of 30º type dislocations with Burgers vectors parallel to the interface were observed and found to adopt an orientation whereby the component dislocations had no effect on misfit strain. In cross-section, 30º type dislocations with Burgers vectors inclined to the interface were found to be numerous, 60º and screw type threading dislocations were also observed, but the cross-section projection axis made analysis of these types difficult. The screw and edge components of 30º , 60º and screw type threading dislocations are compared and it is found that the Burgers vector component causing layer tilt is of magnitude (a(_o)/2) for each type. Annealing of CdTe/GaAs epilayers under di-methyl cadmium flow was found to have no deleterious effect on layer morphology but did not result in a narrower X-ray rocking curve. Based upon HRXRD FWHM, 8µm thick CdTe buffer layers grown by MOVPE are estimated to have a dislocation density of about 3xl0(^8)cm(^-2). Even after many of the threading dislocations have been bent over at the CdTe/CMT interface, their density in MOVPE grown CMT/CdTe/GaAs is still greatly in excess of the l0(^5)cm(^-2) desired. The issues discussed and conclusions drawn in this thesis represent a thorough study of the continuing progress towards high quality MOVPE growth of CMT.

Thesis (Ph. D.)--Lehigh University, 1998. / Includes vita. Includes bibliographical references.

Digitized by Kansas State University Libraries