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Thesis (M. Arch.)--Massachusetts Institute of Technology, Dept. of Architecture, 1980. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ROTCH. / Includes bibliographical references (p. 102-103). / This thesis is an examination of the morphological aspects of future growth in Telluride, Colorado, a 19th - century mining town in the Rocky Mountains. Its aim is to demonstrate that further expansion of this grid settlement can occur in a manner that establishes a morphological continuity with the existing context. The first three sections document a method of observation and analysis of the town's past patterns of growth and existing morphology. This method relies in part on firsthand observation and the study of available documentation of the town. The final section contains the design projections -- my recommendation about how the town could expand. These are presented as a site plan that illustrates the physical form of expansion, and supporting diagrams and design studies. / by David G. Cooper. / M.Arch.

An experimental Nernst effect measuring system is designed and constructed. The ability to measure the Nernst effect allows completion of a thermoelectric suite of measurements consisting of electrical conductivity, the Seebeck effect, the Hall effect, and the Nernst effect. This suite of measurements gives information about electron transport, carrier concentration, and electron scattering within a thermoelectric sample. Programs were designed in LabView to control the various instruments in the measuring system. Measurements of the Nernst effect were taken on two thermoelectric samples, bismuth nickel telluride and bismuth antimony telluride. These measurements were taken at both constant temperature and constant magnetic field. An error analysis of the Nernst effect measuring system is also presented, with consideration as to future work that can be done to improve the quality of Nernst effect measurements taken from the system.

Thesis (M.C.P.)--Massachusetts Institute of Technology, Dept. of Urban Studies and Planning, 1980. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ROTCH. / Bibliography: p. 164-165. / by Barbara A. Cole. / M.C.P.

Jane Hodgson Dennis. / "January 15, 1961." "This report is identical with a thesis submitted to the Department of Electrical Engineering, M.I.T., in partial fulfillment of the requirements for the degree of Doctor of Philosophy." / Bibliography: p. 52. / Army Signal Corps Contract No. DA36-039-sc-78108. Dept. of the Army Task 3-99-20-001 and Project 3-99-00-000.

Oscar P. Manley. / "September 1, 1960." Based partly on a thesis submitted to the M.I.T. Dept. of Electrical Engineering, June, 1960. / Bibliography: p. 35. / Army Signal Corps Contract DA36-039-sc-78108. Dept. of the Army Task 3-99-20-001 and Project 3-99-00-000.

For the theory of electrochemical analysis, a kinetic model that considers the ion transport limitations near the cathode of electrode is based upon a generalized Butler-Volmer equation and has been modified in theory and developed. The subjects of this study are the investigation of the kinetics mechanism of CdTe electrodeposition from an aqueous solution containing CdSO4, TeO2, and H2SO4 in cyclic voltammetry and applied to the optimal control of the composition and stoichiometric deviation of CdTe thin film by electrodeposition. The computer simulation is performed to understand the influences of electrodeposited parameters in the process, such as deposition temperature, pH value and concentrations of Cd2+ and HTeO2+ ions, is one of the focuses in this study. In this investigation, a novel electrochemical method for simultaneously measuring diffusion coefficient and ion transference number is applied in the simulation of CdTe electrodeposition for the first time. From the fitting of the experimental data, the values of the thermodynamic, kinetic and mass transport parameters of the electrodeposition process are obtained. In addition, the modified Butler-Volmer model predicts the potential of perfect stoichiometry (PPS) for electrodeposition of CdTe thin film, and a good agreement has been found between the calculated and experimental results. It also predicts the composition of electrodeposits for the electrodeposition of CdTe and other II-VI and III-V compounds from solutions containing reducible ions. Furthermore, the one that is worth mentioning in this investigation, a novel algorithm of stoichiometric deviation is also developed and applied to the electrodeposition for the first time. With the change of the parameter, the deviation of stoichiometry can be estimated accurately. The simulated results of mathematical model are verified experimentally using electrodeposition and can obtain two aspects. They are the accurate potential perfect stoichiometry (PPS) in which the intrinsic CdTe thin film can be electrodeposited and the stoichiometric deviation which can be dominated accurately in the adjustment of electrodeposited potential. Besides, the native non-degenerate p-type and n-type CdTe thin film can also be deposited. At PPS, well-connected granular CdTe thin films can be deposited and are predicted to be intrinsic, but are slightly p-type due to cadmium vacancies (VCd). The conversion of conductive type occurs only by defect redistribution and local defect reactions after annealing; the converted n-type layer shows lower resistivity and higher mobility. A film annealed at 350oC exhibits excellent crystallization.

Title from PDF of title page. / Document formatted into pages; contains 71 pages. / Thesis (M.S.E.E.)--University of South Florida, 2003. / Includes bibliographical references. / Text (Electronic thesis) in PDF format. / ABSTRACT: The CdTe solar cell is a leading candidate for cost-effective thin-film solar cells having demonstrated small area cell effciencies of 16.4%. A Key issue associated with CdTe thin film photovoltaic modules is the analysis of degradation behavior of the device. The analysis is complicated as changes due to degradation may be reversible. Solar cell measurement techniques were used to understand the changes in device parameters after light soaking for 1000 hours. An automated measurement setup was implemented as part of this thesis work. The main objective of this thesis was to study the effect of CdCl&esc;b2&esc;s heat treatment on the device stability. The temperature for this heat treatment was varied from 360oC to 400oC. Cells were stressed under illumination at both short circuit and open circuit conditions. It was found that the increase CdCl&esc;b2&esc;s heat treatment temperature slowed down the degradation rate.This was true for both short and open circuit stress conditions. Also short circuit stress condition slowed down the degradation of the device when compared with the open circuit condition. It became evident that the recombination current mainly got affected when the device was said to be degraded. / System requirements: World Wide Web browser and PDF reader. / Mode of access: World Wide Web.

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Thesis (M.S.)--University of Texas at El Paso, 2008. / Title from title screen. Vita. CD-ROM. Includes bibliographical references. Also available online.