This dissertation presents to our knowledge the first demonstration of a quantum well (QW) laser monolithically integrated with internal optical pump based on a light emitting diode (LED). The LED with high efficiency is operated in a thermoelectrophotonic (TEP) regime for which it can absorb both its own emitted light and heat. The LED optical pump can reduce internal optical loss in the QW laser, and enables monolithically integrated TEP heat pumps to the semiconductor laser. The design, growth and fabrication processes of the laser chip are discussed, and its experimental data is presented. In order to further increase the TEP laser efficiency the development of QDs as the active region for TEP edge emitting laser (EEL) is studied. The usage of QD as TEP laser's active region is significant in terms of its low threshold current density, low internal optical loss and high reliability, which are mainly due to low transparency in QD laser. The crystal growth of self-organized QDs in molecular beam epitaxial (MBE) system and characterization of QDs are mentioned. The design, growth, processing and fabrication of a QD laser structure are detailed. The characteristics of laser devices with different cavity length are reported. QD active regions with different amount of material are grown to improve the active region performance. Theoretical calculations based on material parameters and semiconductor physics indicate that with proper design, the combination of high efficiency LED in TEP regime with a QD laser can result in the integrated laser chip power conversion efficiency exceeding unity.