The effect of strain (stress) on the below threshold output of InGaAsP diode lasers has been investigated theoretically and experimentally. The degree of polarization (DOP) and the polarization- resolved spectral output (PRSO) were obtained as a function of the external stress applied to the device. A correlation between the DOP and the peak of the PRSO as a function of the stress was found. This correlation suggests that below threshold, DOP can be used to measure the strain in the active region of lasers. A model based on a strain modified Shockley matrix for the band calculation and a strain modified dipole moment for the optical emission has been constructed to bridge the correlation between the DOP and PRSO. / Thesis / Master of Engineering (ME)