Shear-mode thin film bulk acoustic resonator (TFBAR) devices with c-axis tilted AlN films are fabricated for the application of liquid sensors. To fabricate shear-mode TFBAR devices, the off-axis RF magnetron sputtering method for the growth of piezoelectric AlN thin films is adopted and influences of the relative distance and the sputtering parameters are investigated. The shrar-mode phenomenon of a TFBAR results from the tilted crystalline orientation of AlN thin films. In this thesis, the AlN thin films are deposited with tilting angles of 15¢X and 23¢X, set by controlling the deposition parameters. The properties of the AlN thin films are investigated by X-ray diffraction and scanning electron microscopy. The frequency response is measured using an HP8720 network analyzer and a CASCADE probe station. The frequency response of the TFBAR device with 23¢X tilted AlN thin film is measured to reveal its ability to provide shear-mode resonance. The resonance frequencies of the longitudinal and shear modes are 2.07 GHz and 1.17 GHz, respectively. To investigate the sensing characteristics of TFBAR, two basic experiments of mass and liquid loading are carried out. The sensitivities of the longitudinal and shear modes to mass loading are calculated to be 2295 Hz cm2/ng and 1363 Hz cm2/ng with the mechanical quality factors of 588 and 337, respectively. However, the mechanical quality factors of the longitudinal mode of TFBAR without and with a liquid loading decreased from 588 to 0, whereas those remain almost the same for the shear mode under liquid loading. The sensitivities of the longitudinal and shear modes are calculated to be 0 and 17.88 Hz cm2/£gg for liquid loading.