Spelling suggestions: "subject:"transistors (dielectric)""
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Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation /Or, Chin-tung, David. January 2002 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2002. / Includes bibliographical references.
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Analyses of device characteristics in low voltage p-, new material n-, and dual-channel organic field-effect transistorsJeong, Yeon Taek, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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The effects of silicon, nitrogen and oxygen incorporation and oxygen-scavenging technique on performances of hafnium-based gate dielectric MOSFETsChoi, Changhwan. January 1900 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.
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Process development, characterization, transient relaxation, and reliability study of HfO₂ and HfSi(x)O(y) gate oxide for 45nm technology and beyondAkbar, Mohammad Shahariar. Lee, Jack Chung-Yeung, January 2005 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references.
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High-K dielectrics for scaled CMOS and SANOS nonvolatile semiconductor memory devices /Zhao, Yijie, January 2006 (has links)
Thesis (Ph. D.)--Lehigh University, 2006. / Includes vita. Includes bibliographical references (leaves 121-133).
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A study on electrical and material characteristics of hafnium oxide with silicon interface passivation on III-V substrate for future scaled CMOS technologyOk, Injo, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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III-V channel MOS devices with atomic-layer-deposited high-k gate dielectrics interface and carrier transport studies /Shahrjerdi, Davood, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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