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Many low dimensional structures arise from self-assembly when depositing metals on silicon surfaces, including both quantum dots and quantum wires. One class of these objects are rare earth silicide nanowires (RENW) grown on Si(001). In this dissertation, NW thermal stability, control of NW cross section, and associated surface reconstructions are studied by Scanning Tunneling Microscopy (STM). We test thulium and find for the first time that it forms NWs and these NWs are stable against prolonged annealing. We also find that the RENWs nucleate at 2×7 reconstruction domain boundaries. These results pave the way for precise control over NW size, placement, and integration with functional nanostructures and nanodevices.Another type of self-assembled NWs on Si(001) are insulating CaF2 NWs. As an ideal model system for epitaxial growth of an insulator on a semiconductor surface, CaF2 offers unique properties such as simple structure, good lattice match to silicon and congruent evaporation. In this thesis the growth behavior of CaF2 on the Si(001) surface is investigated. At low coverages CaF2 molecules randomly locate on Si(001). Features observed at this stage are explained in terms of dissociated fragments of CaF2 terminating the dangling bonds of Si dimers. Etching is observed after surface is saturated by these features with a 2×1 periodicity. A 2×n phase, grown at 750°C, suggests the dissociation of CaF2, as proved by the simulation of LEED patterns. A c(4×4) phase is observed from 0.5ML to about 1ML with deposition temperature from 600oC to 700oC. At the highest CaF2 deposition coverages studied, a stripe phase and CaF2 NWs are observed by a combination of STM, AFM and SEM. The results provide a significant expansion in the knowledge of CaF2 on Si(001). The common thread that links all these studies is the extent to which nanostructures can be controlled by careful growth conditions, not just by substrate temperature and the amount of material deposited, but also by timing of post-deposition annealing, etc. The grown nanostructures are metastable and result from a balance of energetic considerations and kinetics.

Many low dimensional structures arise from self-assembly when depositing metals on silicon surfaces, including both quantum dots and quantum wires. One class of these objects are rare earth silicide nanowires (RENW) grown on Si(001). In this dissertation, NW thermal stability, control of NW cross section, and associated surface reconstructions are studied by Scanning Tunneling Microscopy (STM). We test thulium and find for the first time that it forms NWs and these NWs are stable against prolonged annealing. We also find that the RENWs nucleate at 2×7 reconstruction domain boundaries. These results pave the way for precise control over NW size, placement, and integration with functional nanostructures and nanodevices.Another type of self-assembled NWs on Si(001) are insulating CaF2 NWs. As an ideal model system for epitaxial growth of an insulator on a semiconductor surface, CaF2 offers unique properties such as simple structure, good lattice match to silicon and congruent evaporation. In this thesis the growth behavior of CaF2 on the Si(001) surface is investigated. At low coverages CaF2 molecules randomly locate on Si(001). Features observed at this stage are explained in terms of dissociated fragments of CaF2 terminating the dangling bonds of Si dimers. Etching is observed after surface is saturated by these features with a 2×1 periodicity. A 2×n phase, grown at 750°C, suggests the dissociation of CaF2, as proved by the simulation of LEED patterns. A c(4×4) phase is observed from 0.5ML to about 1ML with deposition temperature from 600oC to 700oC. At the highest CaF2 deposition coverages studied, a stripe phase and CaF2 NWs are observed by a combination of STM, AFM and SEM. The results provide a significant expansion in the knowledge of CaF2 on Si(001). The common thread that links all these studies is the extent to which nanostructures can be controlled by careful growth conditions, not just by substrate temperature and the amount of material deposited, but also by timing of post-deposition annealing, etc. The grown nanostructures are metastable and result from a balance of energetic considerations and kinetics.

Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references (leaves 70-77). Available also in an electronic version.

Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.