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Comparison and Design of High Efficiency Microinverters for Photovoltaic ApplicationsDominic, Jason 14 January 2015 (has links)
With the decrease in availability of non-renewable energy sources coupled with the increase in the amount of energy required for the operation of personal electronic devices there has been an increased focus on developing systems that take advantage of renewable energy sources. Renewal energy sources such as photovoltaic (PV) panels have become more popular due to recent developments in PV panel manufacturing that decreases material costs and improves energy harvesting efficiency. Since PV sources are DC sources power conversion stages have to be used in order to interface this power to the existing electrical utility system.
The structure of large scale PV systems usually consists of several PV panels connected in series to achieve a high input source voltage that can be fed into a high power centralized DC-AC inverter. The drawback to this approach is that when the PV panels are subjected to less than ideal conditions. If a single PV panel is subjected to drastically less solar irradiation during cloud conditions, then its output power will drop dramatically. Since this panel is series connected with the other PV panels, their current output is also dragged low decreasing the power output of the system. Algorithms that have the power converter operate at different input conditions allow the system to operate at a maximum power point (MPP), however this only allows the system to operate at a higher power point and not the true MPP.
To get around this limitation a new PV system implementation was created by giving each panel its own DC-AC power conversion system. This configuration gives each panel the ability to operate at its own MPP increasing the total system energy harvest. Another advantage of the single panel DC-AC microinverter power conversion stage is that the outputs are parallel connected to the utility grid easily allowing the ability to expand the system without having to shut down the entire system.
The most prevalent implementation of the microinverter consists of a single power converter that uses the PV low voltage DC and outputs high voltage AC. In order to ensure that the double line AC ripple does not propagate to the PV panel a large bank of electrolytic capacitors are used to buffer the ripple. There is concern that the electrolytic capacitor will degrade over time and affect the system efficiency. To get around having to use electrolytic capacitors a two stage microinverter has been proposed. The two stage microinverter consists of a DC-DC converter that steps up the low DC voltage of the PV panel to high voltage DC and the second stage is a DC-AC inverter that takes the high voltage DC and converts it to high voltage AC. There is a capacitor that connects the two power converter stages called the DC link capacitor which can buffer the double line energy ripple without using electrolytic capacitors.
This thesis focuses on the review of several DC-AC inverter topologies suitable for use in PV microinverter systems. Operation capabilities such as common mode noise and efficiency are compared. The main focus of the review is to determine the optimal DC-AC inverter using the performance metrics of cost, efficiency and common mode performance. A 250 W prototype is built for each inverter topology to verify its performance and operation. / Master of Science
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Characterization of P-type Zinc Oxide FilmsOleti Kalki Rajan, Madhavi 06 July 2004 (has links)
Zinc Oxide falls under the classification of transparent conductive oxides. They typical optical transmittance of Zinc Oxide is 90% in the visible wavelength region. Though stoichiometric ZnO is an insulator, due to the presence of internal defects such as Zn interstitials and Oxygen vacancies, it exists as a n-type conductor.
The other important property of ZnO which could be used by the optical field is its widebandgap. ZnO has a wide bandgap of 3.2eV -3.3eV. The additional advantage of being a direct bandgap semiconductor has increased the probability of using ZnO for short wavelength applications. These practical applications are directly related to the fabrication of homostructural p-n junctions. ZnO can be readily doped n-type. Doping ZnO P-type is very difficult due to its native defects and the self-compensation that occurs during doping. But when P-type doping is obtained in ZnO it could be used in various optical applications such as light emitting diodes and laser diodes. This provided the motivation for this research.
Theoretical studies have proposed nitrogen as a suitable material to achieve p-type ZnO. Literature provides a set of conditions that could be used to improve the doping in ZnO films. In this research, a set of these conditions were used to implement p-type doping in ZnO films. A sputtering system with a setup to support two Torus - 5M guns was used to deposit the ZnO films. A codoping technique using an aluminium doped zinc oxide target was the first method. Though an improvement in the nitrogen incorporation was found in this method in the beginning, a further increase in the nitrogen pressure did not show further improvement. A co-sputtering technique of a 99.999% pure ZnO target and a 99.99% pure Zn metal target was the second method. The ZnO target was rf sputtered while the Zn target was dc sputtered using the two guns provided in the deposition chamber. The extra Zinc obtained from sputtering the metallic Zn target was used to improve the incorporation of nitrogen. The films were later deposited in an oxygen ambient where the excess oxygen was used to suppress the oxygen vacancies that act as hole killers during the doping process. Four point probe measurement and Keithley 900 series Hall equipment were used for the electrical characterization of the films. An ORIEL monochromator was used to optically characterize the films. Hitachi S-800 T EDAX analysis system was used to measure the atomic weight % of nitrogen incorporated in the ZnO:N films. Deposition at an oxygen partial pressure of 0.3mT and 0.8mT of nitrogen produced p-type ZnO films. These films showed a carrier absorption in the short wavelength region. The carrier concentration and the mobility obtained for these films were 4.0 x1016 cm-3 and 0.12 cm2 /V-s respectively.
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