Amostras nanoestrutradas do sistema \'SR\'TI IND.1-x\'NB IND.x\'O IND.3\' na forma de pó contendo até 10 mol % de nióbio foram preparadas através do método dos precursores poliméricos. As propriedades térmicas, estruturais e óticas destas amostras foram caracterizadas através de diferentes técnicas. Os resultados mostram que no limite de concentração de nióbio que foi incorporado a rede da matriz \'SR\'TI\'O IND.3\', ocorreu a formação da solução sólida \'SR\'TI IND.1-x\'NB IND.x\'O IND.3\' e que o aumento da quantidade de nióbio leva a uma maior aglomeração das partículas bem como a um aumento na temperatura de cristalização das amostras. Em bom acordo com dados da literatura, uma intensidade fotoluminescente significativa foi somente observada em amostras amorfas ou parcialmente cristalinas. Amostras na forma de filmes finos foram obtidas através da técnica de evaporação por feixe de elétrons. Os dados de difração de raios-X (DRX) mostram que em certas composições, além da fase \'SR\'TI\'O IND.3\', observou-se a presença da fase \'SR\'CO IND.3\'. Através das técnicas de DRX e Microscopia de força atômica (AFM) foi possível observar que, como no caso das amostras na forma de pó, o aumento da concentração de nióbio inibe o processo de cristalização da amostra. Medidas da resistência elétrica mostraram que todas as amostras, independente da concentração de nióbio, apresentam valores elevador de resistência, da ordem de \'10 POT.15\' \'ômega\' . Este valor, muito acima do esperado e do observado na literatura, inviabilizou a medidas de sensibilidade dos filmes a diferentes tipos de gases. / Nanostructured \'SR\'TI IND.1-x\'NB IND.x\'O IND.3\' samples in a powder form containing up to 10 mol% of niobium have been prepared by the polymeric precursor method. The thermal, structural and optical properties of these samples were characterized by different techniques. The results show that in the limit of concentration of niobium added to the samples, the dopant was incorporated into the \'SR\'TI\'O IND.3\' matrix lattice forming a \'SR\'TI IND.1-x\'NB IND.x\'O IND.3\' solid solution. The increasing on the amount of niobium leads to an increased agglomeration of the particles as well as an increase in the crystallization temperature of the samples. In good agreement with the literature data, a significant photoluminescence intensity was only observed in amorphous or partially crystalline samples. Samples in the form of thin films were obtained using the electron beam evaporation technique. X-ray diffraction (XRD) show that in certain compositions, beyond the \'SR\'TI\'O IND.3\' phase, it was also observed the presence of phase \'SR\'CO IND.3\' phase. Through the XRD and Atomic Force Microscope (AFM) results, it has been observed that, as in the case of the samples in powder form, the concentration of niobium inhibits the crystallization process of the sample. Electrical resistance measurements showed that all samples, independent of the concentration of niobium, present higher values of resistance of the order of \'10 POT.15\' \'ômega\' . This value is much higher than expected and reported in the literature and does not allowed to measure the sensibility of thin films to different species of gases.

Amostras nanoestrutradas do sistema \'SR\'TI IND.1-x\'NB IND.x\'O IND.3\' na forma de pó contendo até 10 mol % de nióbio foram preparadas através do método dos precursores poliméricos. As propriedades térmicas, estruturais e óticas destas amostras foram caracterizadas através de diferentes técnicas. Os resultados mostram que no limite de concentração de nióbio que foi incorporado a rede da matriz \'SR\'TI\'O IND.3\', ocorreu a formação da solução sólida \'SR\'TI IND.1-x\'NB IND.x\'O IND.3\' e que o aumento da quantidade de nióbio leva a uma maior aglomeração das partículas bem como a um aumento na temperatura de cristalização das amostras. Em bom acordo com dados da literatura, uma intensidade fotoluminescente significativa foi somente observada em amostras amorfas ou parcialmente cristalinas. Amostras na forma de filmes finos foram obtidas através da técnica de evaporação por feixe de elétrons. Os dados de difração de raios-X (DRX) mostram que em certas composições, além da fase \'SR\'TI\'O IND.3\', observou-se a presença da fase \'SR\'CO IND.3\'. Através das técnicas de DRX e Microscopia de força atômica (AFM) foi possível observar que, como no caso das amostras na forma de pó, o aumento da concentração de nióbio inibe o processo de cristalização da amostra. Medidas da resistência elétrica mostraram que todas as amostras, independente da concentração de nióbio, apresentam valores elevador de resistência, da ordem de \'10 POT.15\' \'ômega\' . Este valor, muito acima do esperado e do observado na literatura, inviabilizou a medidas de sensibilidade dos filmes a diferentes tipos de gases. / Nanostructured \'SR\'TI IND.1-x\'NB IND.x\'O IND.3\' samples in a powder form containing up to 10 mol% of niobium have been prepared by the polymeric precursor method. The thermal, structural and optical properties of these samples were characterized by different techniques. The results show that in the limit of concentration of niobium added to the samples, the dopant was incorporated into the \'SR\'TI\'O IND.3\' matrix lattice forming a \'SR\'TI IND.1-x\'NB IND.x\'O IND.3\' solid solution. The increasing on the amount of niobium leads to an increased agglomeration of the particles as well as an increase in the crystallization temperature of the samples. In good agreement with the literature data, a significant photoluminescence intensity was only observed in amorphous or partially crystalline samples. Samples in the form of thin films were obtained using the electron beam evaporation technique. X-ray diffraction (XRD) show that in certain compositions, beyond the \'SR\'TI\'O IND.3\' phase, it was also observed the presence of phase \'SR\'CO IND.3\' phase. Through the XRD and Atomic Force Microscope (AFM) results, it has been observed that, as in the case of the samples in powder form, the concentration of niobium inhibits the crystallization process of the sample. Electrical resistance measurements showed that all samples, independent of the concentration of niobium, present higher values of resistance of the order of \'10 POT.15\' \'ômega\' . This value is much higher than expected and reported in the literature and does not allowed to measure the sensibility of thin films to different species of gases.

Ce travail concerne la réalisation et la caractérisation de dispositifs hyperfréquences agiles en fréquence à base du matériau ferroélectrique KTa1-xNbxO3 (KTN) déposé en couche mince. Doté d'une permittivité diélectrique élevée (er = 700 à 10 GHz et Ebias = 0 kV/cm), KTN est un candidat prometteur pour la reconfigurabilité et la miniaturisation des dispositifs hyperfréquences. Ses pertes restent néanmoins conséquentes (tanδr = 0,3 à 10 GHz et Ebias = 0 kV/cm) et sont en partie à l'origine des pertes globales des dispositifs hyperfréquences réalisés. Afin de limiter ces pertes, une double approche a été engagée : (1) réduction des pertes diélectriques par le dopage du matériau KTN par un oxyde à faibles pertes : MgO à 3% et 6% en moles et (2) réduction des pertes globales par le confinement du matériau KTN dopé dans les zones actives des dispositifs hyperfréquences. Les couches minces de KTN non dopé et dopé d'épaisseur ~ 600 nm ont été déposées sur substrats de saphir orienté R par ablation laser pulsé (PLD). Deux compositions différentes (KTa0,5Nb0,5O3 et KTa0,65Nb0,35O3) ont été sélectionnées pour cette étude. Des dispositifs coplanaires imprimés sur les films ferroélectriques ont été réalisés et caractérisés dans la bande d'intérêt 1 GHz-20 GHz. Le dopage à 6% assure le meilleur compromis pertes / agilité avec une réduction significative des pertes globales de 0,73 à 0,20 (facteur ~ 4) du dispositif résonant imprimé sur KTa0,5Nb0,5O3 après son confinement par microgravure laser. Une agilité en fréquence de 8% est obtenue sous Ebias ≈ 75 kV/cm. L'étude d'une antenne à ondes de fuite reconfigurable en bande Ku a ensuite été mise en oeuvre. Les couches minces de KTa0,5Nb0,5O3 d'épaisseur ~ 600 nm ont été déposées par PLD sur substrats de saphir R, puis le matériau ferroélectrique a été localisé par microgravure laser dans les 6 zones actives de l'antenne (constituée de 6 tronçons). L’évolution du coefficient de réflexion sous Ebias ≈ 85 kV/cm montre une agilité en fréquence égale à 2%. Un gain maximal de 6,7 dBi a été mesuré à f = 17 GHz et Ebias = 0 kV/cm, conformément aux résultats de simulation. / This work deals with the fabrication and characterization of frequency tunable microwave devices based on ferroelectric KTa1-xNbxO3 (KTN) thin films. KTN material is a promising candidate for the tunability and miniaturization of microwave devices, due to its high dielectric permittivity (er= 700 at 10 GHz and Ebias= 0 kV/cm). Nevertheless its intrinsic loss (tanδr= 0.3 at 10 GHz and Ebias= 0 kV/cm) strongly impacts the global loss of the tunable microwave devices. To reduce this, a twofold solution has been investigated: (1) reduction of the loss tangent by doping KTN material with a low loss oxide, namely MgO (3% and 6% in mol.) and (2) confinement of the doped KTN film in efficient regions of the microwave devices and removal in noncritical areas by laser microetching. The ~ 600 nm-thick undoped and doped KTN films have been grown by Pulsed Laser Deposition (PLD) on R-plane sapphire substrates. Two different compositions (KTa0.5Nb0.5O3 and KTa0.65Nb0.35O3) were specifically selected for this study. Microwave measurements have been performed on KTN-based coplanar devices from 1 GHz to 20 GHz. Stub resonator printed on confined 6% doped KTa0.5Nb0.5O3 film exhibits the best loss/agility trade-off with a significant global loss reduction from 0.73 to 0.20 (factor ~ 4) with a 8% frequency tunability under Ebias≈ 75 kV/cm.Thereafter, the study of a reconfigurable Ku-band leaky-wave antenna has been carried out. A ~600 nm-thick KTa0.5Nb0.5O3 film was deposited by PLD on R-plane sapphire substrate. The ferroelectric material was localized by laser microetching on 6 specific areas of the antenna (consisted of 6 sections). The variation of the reflection coefficient under biasing (Ebias≈ 85 kV/cm) demonstrates a frequency tunability of 2%. A gain equal to 6.7 dBi has been measured at f= 17 GHz and Ebias= 0 kV/cm, in accordance with the numerical results.