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Investigation and Fabrication of Novel Nonvolatile SONOS-TFT Memory with Nano-wires Structure

The conventional floating gate NVSM will suffer some limitations for continued scaling of the device structure. Therefore, two approaches, the silicon-oxide-nitride-oxide-silicon (SONOS) and the nanocrystal nonvolatile memory devices, have been investigated to overcome the limit of the conventional floating gate NVSM.
In this thesis, the SONOS-TFT with multiple nanowires structure was proposed and fabricated for memory applications. The memory characteristic of standard SONOS-TFT, channel width of the device is 1£gm, was compared with the nanowires SONOS-TFT, each channel width of the device is 65nm. The SONOS-TFT with multiple nanowires structure (NW SONOS-TFT) has good program/erase efficiency, retention and transfer characteristics due to the larger electric field at the corner region and more number of corners. The NW SONOS-TFTs can be treated as high performance devices and also as high program/erase efficiency nonvolatile memory under adequate voltage range operation. The fabrication of SONOS-TFTs with nano-wire channels is quite easy and involves no additional processes. Such a SONOS-TFT is thereby highly promising for application in the future system-on-panel display applications.
In addition, the metal nanocrystals nonvolatile memory fabricated at low temperature is also studied in this thesis. The Ni-silicide nanocrystals memory was successfully fabricated at low temperature. The rapid thermal oxidation at low temperature was executed to make the metal nanocrystals aggregate. The device has superior memory characteristics, such as program/erase efficiency, retention time and endurance. The nonvolatile metal nanocrystals memory fabricated at low temperature processes is very promising for the application on the portable products and panel displays.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0716106-221528
Date16 July 2006
CreatorsLin, Po-Sung
ContributorsTing-Chang Chang, An-Kuo Chu, Po-Tsun Liu, Mei-Ting Chang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716106-221528
Rightsrestricted, Copyright information available at source archive

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