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Numerical Simulation of the outlet effect for the MOCVD process.

Abstract
A method using CFD-based computer simulations as a virtual reactor was proposed for cost-effective CVD reactor design. The virtual reactor was developed by combining the chemical reactor mechanism and rate constants obtained from kinetic studies using a small-scale, with the momentum, mass and heat transport processes simulated using a CFD code. The effect of the flow structure on the film thickness uniformity is demonstrated for the growth of GaAs from a Ga(CH3)3 -AsH3- H2 mixture.
We present a modeling study of the growth of gallium arsenide layers deposited onto a high-temperature susceptor in a cylindrical metalorganic chemical vapor deposition reactor. We analyzed the deposition process with a two-dimensional model that is axisymmetric about the vertical axis.
We attempted to control the extent of the consecutive reaction by modifying the flow pattern. For the output of side walls, because the gas velocity increase near the wafer edge, the residence time was lower in the central part of the wafer than near the edge. Therefore, it can be controlled by locating the outlet such that residence time above the entire wafer is uniform.
And the study finds that decreasing the hole size lowered the film uniformity. This occurred because relative to the velocity at the center of the wafer, the velocity near the wafer edge increased with decreasing hole size. This result confirms that the control of the boundary layer thickness is very important for the film thickness uniformity. We also find that decreasing the shower-to-wafer distance increased velocity near the wafer and therefore increased the growth rate.
The present study indicates that we can design a MOCVD reactor and optimize the operating conditions efficiently using a computer simulation with other¡¦s experiments.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0702102-090807
Date02 July 2002
CreatorsLee, Hong-Jan
ContributorsRu.Yang, Der-ming.Chow, Jen-Jyh.Hwang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702102-090807
Rightsunrestricted, Copyright information available at source archive

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