P diffuses predominantly by the interstitial mechanism in Si. Assuming that there is a strong binding energy between P and I, therefore, the basic process of P diffusion is the diffusion of (PI), where I and (PI) represent self-interstitials and P-I pairs, respectively. In the high-P-concentration region, excess I is generated by the dissociation of (PI) and the limiting process of P diffusion depends on whether or not excess I is controlled. That is, if the concentration of excess I decreases relatively to the equilibrium I concentration due to the effect of the decrease in quasi self-interstitial formation energy, or if excess I is removed by the recombination with vacancies, P diffuses fast and the plateau is
formed; if not, P diffuses slowly and the rapid fall is formed. In the tail region, the P concentration is low and the limiting process of P diffusion is the basic process of P diffusion, that is, the diffusion of (PI). Excess I generated in the high-P-concentration region diffuses into the low-P-concentration region, and I is supersaturated there. Therefore, the concentration of (PI) increases, resulting in the fast diffusion of P and the formation of the tail.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa.de:bsz:15-qucosa-197759 |
| Date | 17 February 2016 |
| Creators | Yoshida, Masayuki, Morooka, Masami, Tanaka, Shuji, Takahashi, Manabu |
| Contributors | Yoshida Semiconductor Laboratory,, Fukuoka Institute of Technology,, Universität Leipzig, Fakultät für Physik und Geowissenschaften |
| Publisher | Universitätsbibliothek Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:article |
| Format | application/pdf |
| Source | Diffusion fundamentals 1 (2005) 3, S. 1-17 |
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