We study the electronic band structure of bulk within a six-band bond-orbital model. All interaction parameters of this model involved are directly related to parameters for describing bulk bands near the zone center in the k¡Ep finite difference method. To study the conduction-valence band mixing effect, we calculate the electronic band structure for the InAs-GaSb superlattice, within a six-band bond-orbital model. In the InAs-AlSb-GaSb-AlSb superlattice, we find that energy-gap of this material will change rapidly with different AlSb layer thickness. This indicates that the e-X line observed in far-infrared cyclotron-resonance spectrum is originated from conduction-valence band mixing effect. This result is in good agreement with the experimental results.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0617102-131550 |
| Date | 17 June 2002 |
| Creators | Chang, Chun-Chin |
| Contributors | Jih-Chen Chiang, I-Min Jiang, Jiaun-Shing Shyu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617102-131550 |
| Rights | unrestricted, Copyright information available at source archive |
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