In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing SiO₂ forming a Ge-rich polycrystalline layer. As for wet oxidation, Ge was incorporated into the oxide, forming a layer of mixed oxide, SixGe₁âxOy. Formation of nanocrystalline Ge was observed when the layer of SixGe₁âxOy was annealed in a N₂ ambient. We have fabricated a metal-insulator-semiconductor structure with nanocrystalline Ge embedded within the insulator layer to study its feasibility as a memory device. / Singapore-MIT Alliance (SMA)
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3722 |
| Date | 01 1900 |
| Creators | Kan, Eric Win Hong, Leoy, C.C., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A. |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Article |
| Format | 497248 bytes, application/pdf |
| Relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); |
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