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Gold Thermocompression Wafer Bonding

Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, electrically conductive bond. This paper documents work conducted to model the effect of patterning in causing pressure non-uniformities across the wafer and its effect on the subsequent fracture response. A finite element model was created that revealed pattern-dependent local pressure variations of more than a factor of three. This variation is consistent with experimental observations of bond quality across individual wafers A cohesive zone model was used to investigate the resulting effect of non-uniform bond quality on the fracture behavior. A good, qualitative agreement was obtained with experimental observations of the load-displacement response of bonds in fracture tests. / Singapore-MIT Alliance (SMA)

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3828
Date01 1900
CreatorsSpearing, S. Mark, Tsau, Christine H., Schmidt, Martin A.
Source SetsM.I.T. Theses and Dissertation
Languageen_US
Detected LanguageEnglish
TypeArticle
Format918454 bytes, application/pdf
RelationAdvanced Materials for Micro- and Nano-Systems (AMMNS);

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