Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is used to fabricate pure-oxide and nanolaminate dielectrics based upon Al₂O₃ and ZrO₂. The relative performance of these dielectrics is investigated with respect to application as gate dielectrics for ZnSnO (ZTO) and InGaZnO (IGZO) amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). AOS TFTs are promising candidates for commercial use in applications such as active-matrix displays and e-paper. It was found that the layer thickness, relative composition, and interfacial material all had an effect on TFT performance. Several variants of the Al₂O₃/ZrO₂ nanolaminate were found to exhibit superior properties to either Al₂O₃ or ZrO₂ alone. / Graduation date: 2011
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/21720 |
| Date | 10 June 2011 |
| Creators | Triska, Joshua B. |
| Contributors | Conley, John F. Jr |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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