An analysis that accounts for the effect of standard electrostatic discharge
(ESD) structures on critical LNA specifications of noise figure, input matching and
gain is presented. It is shown that the ESD structures degrade LNA performance
particularly for higher frequency applications. Two LNAs, one with ESD protection
and one without, which operate at 2.4 GHz have been fabricated in a 0.l5��m CMOS
process. The LNAs feature one of the best reported performances for CMOS LNAs
to date. The LNA with ESD protection achieves a gain of 12dB, a NF of 2.77dB
and an IIP3 of 2.4dBm with a power consumption of 4.65mW. The LNA without
ESD protection achieves a gain of 14dB, a NF of 2.36dB and an 11P3 of -2.2dBm
with a power consumption of 4.65mW. / Graduation date: 2002
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/32159 |
| Date | 01 April 2002 |
| Creators | Chandrasekhar, Vinay |
| Contributors | Mayaram, Kartikeya |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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