This thesis presents an overview of the simulation, design, and measurement of state-of-the-art Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) variable gain amplifier (VGA). The VGA design trade-off space is presented and methods for achieving an optimized design are discussed. We demonstrate in this thesis that SiGe HBT VGA has the capability to meet the demanding needs for the next generation wireless systems.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/24614 |
| Date | 10 July 2008 |
| Creators | Jha, Nand Kishore |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Detected Language | English |
| Type | Thesis |
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