The thesis investigates hot carrier relaxation and carrier recombination
mechanism of a InN thin film grown on LAO(LiAlO2) substrate with a ultrafast
time-resolved photoluminescence apparatus. Carriers were excited with laser pulses of energy 1.5 eV and of pulsewidth 150 fs from a Ti:sapphire laser. The photoexcited carriers relax excessive energy mostly within 10 ps thorough carrier-LO-phonon interaction. The effective carrier-LO-phonon emission times were estimated 197 to 58 fs in the temperature range from 250 to 35 K. The Shockley-Read-Hall coefficient was found around 0.8 ns-1. The Auger recombination was trivial at 35 K and become significant at 250 K. The fitted radiative recombination was much smaller than the theoretical estimate. Both effective carrier-LO-phonon scattering times and the radiative and nonradiative decay rates of the studied m-plane InN were found to be smaller than those of c-plane InN in other reports.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0902111-163202 |
| Date | 02 September 2011 |
| Creators | Tseng, Yao-Gong |
| Contributors | Li-Wei Tu, Der-Jun Jang, Meng-En Lee, Chie-Tong Kuo, Yung-Sung Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902111-163202 |
| Rights | user_define, Copyright information available at source archive |
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